Total ionization dose and single event effects of a commercial stand-alone 4 Mb resistive random access memory (ReRAM)

2019 ◽  
Vol 100-101 ◽  
pp. 113443
Author(s):  
J.S. Bi ◽  
B. Li ◽  
K. Xi ◽  
L. Luo ◽  
L.L. Ji ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Effects ◽  
Total Ionization

scholarly journals Single-Event Effects in the Peripheral Circuitry of a Commercial Ferroelectric Random Access Memory

2018 ◽  
Vol 65 (8) ◽  
pp. 1708-1714 ◽  
Author(s):  
A. L. Bosser ◽  
V. Gupta ◽  
A. Javanainen ◽  
G. Tsiligiannis ◽  
S. D. LaLumondiere ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Single Event ◽  
Access Memory ◽  
Single Event Effects ◽  
Ferroelectric Random Access Memory

SINGLE EVENT EFFECTS IN AVIONICS AND ON THE GROUND

2004 ◽  
Vol 14 (02) ◽  
pp. 285-298 ◽  
Author(s):  
EUGENE NORMAND
Keyword(s):  
Fault Tolerant ◽  
Random Access ◽  
Random Access Memory ◽  
Ground Level ◽  
Alpha Particles ◽  
Packaging Materials ◽  
Single Event ◽  
Access Memory ◽  
Single Event Effects ◽  
Negligible Contribution

Single event effects in electronics caused by the atmospheric neutrons have been an issue for systems using large blocks of random access memory (RAM) in avionics applications as well as those on the ground. At ground level there are two main sources of single event effects, alpha particles from the packaging materials as well as the neutrons, but at aircraft altitudes, where the neutron flux is about 300 times higher than the ground, the alpha particles make a negligible contribution. We review the trends over the last 5-10 years in the response of COTS computer systems to single event effects, taking into the response of devices as well as fault tolerant measures incorporated into the systems.

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Sign in / Sign up

Export Citation Format

Share Document