scholarly journals Investigation of the aging of power GaN HEMT under operational switching conditions, impact on the power converters efficiency

2019 ◽  
Vol 100-101 ◽  
pp. 113403
Author(s):  
A.M. Bouchour ◽  
A. El Oualkadi ◽  
P. Dherbécourt ◽  
O. Latry ◽  
A. Echeverri
Keyword(s):  
Power Converters ◽  
Gan Hemt

scholarly journals Review of GaN HEMT Applications in Power Converters over 500 W

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1401 ◽  
Author(s):  
Chao-Tsung Ma ◽  
Zhen-Huang Gu
Keyword(s):  
Energy Demand ◽  
Power Converters ◽  
Power Level ◽  
Energy Conversion Efficiency ◽  
Development Trend ◽  
Green Energy ◽  
Switching Frequency ◽  
High Electron ◽  
Global Trends ◽  
Gan Hemt

Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

Method for Evaluating Insertion Loss of EMI Filter Connected to Semiconductor Power Converters

2012 ◽  
Vol 132 (7) ◽  
pp. 727-735 ◽  
Author(s):  
Michio Tamate ◽  
Tamiko Sasaki ◽  
Akio Toba ◽  
Yasushi Matsumoto ◽  
Keiji Wada ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Power Converters ◽  
Emi Filter

A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier

2011 ◽  
Vol E94-C (7) ◽  
pp. 1193-1198 ◽  
Author(s):  
Akihiro ANDO ◽  
Yoichiro TAKAYAMA ◽  
Tsuyoshi YOSHIDA ◽  
Ryo ISHIKAWA ◽  
Kazuhiko HONJO
Keyword(s):  
Power Amplifier ◽  
Average Power ◽  
Gan Hemt ◽  
Class F

Integrated Current Sensing Technique Suitable for Step-Down Switch-Mode Power Converters

2009 ◽  
Vol E92-C (10) ◽  
pp. 1299-1303
Author(s):  
Xiaojuan XIA ◽  
Liang XIE ◽  
Weifeng SUN ◽  
Longxing SHI
Keyword(s):  
Power Converters ◽  
Current Sensing ◽  
Switch Mode ◽  
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