Study of temperature sensitive optical parameters and junction temperature determination of light-emitting diodes

2012 ◽  
Vol 100 (20) ◽  
pp. 202108 ◽  
Author(s):  
Yue Lin ◽  
Yu-Lin Gao ◽  
Yi-Jun Lu ◽  
Li-Hong Zhu ◽  
Yong Zhang ◽  
...  
2013 ◽  
Vol 60 (1) ◽  
pp. 241-245 ◽  
Author(s):  
Biqing Wu ◽  
Siqi Lin ◽  
Tien-Mo Shih ◽  
Yulin Gao ◽  
Yijun Lu ◽  
...  

2010 ◽  
Vol 46 (10) ◽  
pp. 1450-1455 ◽  
Author(s):  
Ya-Ju Lee ◽  
Chia-Jung Lee ◽  
Chih-Hao Chen

2020 ◽  
pp. 1-1
Author(s):  
Demetrio Iero ◽  
Massimo Merenda ◽  
Sonia Polimeni ◽  
Riccardo Carotenuto ◽  
Francesco G. Della Corte

1989 ◽  
Vol 20 (5) ◽  
pp. 205-217
Author(s):  
J Deforges ◽  
P Garcia ◽  
J Bastie ◽  
F Marandet ◽  
J Bernard ◽  
...  

Energies ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1286
Author(s):  
Krzysztof Górecki ◽  
Przemysław Ptak

This paper concerns the problem of modelling electrical, thermal and optical properties of multi-colour power light-emitting diodes (LEDs) situated on a common PCB (Printed Circuit Board). A new form of electro-thermo-optical model of such power LEDs is proposed in the form of a subcircuit for SPICE (Simulation Program with Integrated Circuits Emphasis). With the use of this model, the currents and voltages of the considered devices, their junction temperature and selected radiometric parameters can be calculated, taking into account self-heating phenomena in each LED and mutual thermal couplings between each pair of the considered devices. The form of the formulated model is described, and a manner of parameter estimation is also proposed. The correctness and usefulness of the proposed model are verified experimentally for six power LEDs emitting light of different colours and mounted on an experimental PCB prepared by the producer of the investigated devices. Verification was performed for the investigated diodes operating alone and together. Good agreement between the results of measurements and computations was obtained. It was also proved that the main thermal and optical parameters of the investigated LEDs depend on a dominant wavelength of the emitted light.


2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Xing-ming Long ◽  
Rui-jin Liao ◽  
Jing Zhou

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.


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