Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range

S. Demirezen; Ş. Altındal

doi:10.1016/j.cap.2010.02.008

Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range

Current Applied Physics ◽

10.1016/j.cap.2010.02.008 ◽

2010 ◽

Vol 10 (4) ◽

pp. 1188-1195 ◽

Cited By ~ 28

Author(s):

S. Demirezen ◽

Ş. Altındal

Keyword(s):

Schottky Barrier ◽

Wide Temperature Range ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Temperature Range

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Current-transport mechanisms in gold/polypyrrole/n-silicon Schottky barrier diodes in the temperature range of 110–360K

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2014.05.060 ◽

2014 ◽

Vol 28 ◽

pp. 66-71 ◽

Cited By ~ 10

Author(s):

A. Gümüş ◽

Ş. Altındal

Keyword(s):

Schottky Barrier ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Temperature Range

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Substrate orientation dependent current transport mechanisms in β-Ga2O3/Si based Schottky barrier diodes

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/6.0000858 ◽

2021 ◽

Vol 39 (3) ◽

pp. 033203

Author(s):

Manoj K Yadav ◽

Arnab Mondal ◽

Satinder K. Sharma ◽

Ankush Bag

Keyword(s):

Schottky Barrier ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Substrate Orientation

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Current transport mechanisms and deep level transient spectroscopy of Au/n-Si Schottky barrier diodes

Microelectronic Engineering ◽

10.1016/j.mee.2011.07.001 ◽

2011 ◽

Vol 88 (11) ◽

pp. 3353-3359 ◽

Cited By ~ 23

Author(s):

J.H. Evans-Freeman ◽

M.M. El-Nahass ◽

A.A.M. Farag ◽

A. Elhaji

Keyword(s):

Schottky Barrier ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Transient Spectroscopy

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Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-016-6011-2 ◽

2016 ◽

Vol 28 (5) ◽

pp. 3987-3996 ◽

Cited By ~ 14

Author(s):

K. Moraki ◽

S. Bengi ◽

S. Zeyrek ◽

M. M. Bülbül ◽

Ş. Altındal

Keyword(s):

Temperature Dependence ◽

Schottky Barrier ◽

Wide Temperature Range ◽

Schottky Barrier Diodes ◽

Characteristic Parameters ◽

Temperature Range

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Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Applied Physics A ◽

10.1007/s00339-016-0558-x ◽

2016 ◽

Vol 122 (12) ◽

Cited By ~ 30

Author(s):

Çiğdem Ş. Güçlü ◽

Ahmet Faruk Özdemir ◽

Şemsettin Altindal

Keyword(s):

Schottky Barrier ◽

Gaussian Distribution ◽

Wide Temperature Range ◽

Schottky Barrier Diodes ◽

Temperature Range ◽

Barrier Heights ◽

Double Exponential ◽

Double Gaussian Distribution

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Determination of the leakage current transport mechanisms in quasi-vertical GaN–on–Si Schottky barrier diodes (SBDs) at low and high reverse biases and varied temperatures

Applied Physics Express ◽

10.35848/1882-0786/ac2260 ◽

2021 ◽

Vol 14 (10) ◽

pp. 104002

Author(s):

Jiabo Chen ◽

Zhihong Liu ◽

Haiyong Wang ◽

Xiufeng Song ◽

Zhaoke Bian ◽

...

Keyword(s):

Schottky Barrier ◽

Leakage Current ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Gan On Si

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Current transport mechanisms in Ru/Pd/n-GaN Schottky barrier diodes and deep level defect studies

Superlattices and Microstructures ◽

10.1016/j.spmi.2012.06.004 ◽

2012 ◽

Vol 52 (3) ◽

pp. 484-499 ◽

Cited By ~ 9

Author(s):

V. Rajagopal Reddy ◽

N. Nanda Kumar Reddy

Keyword(s):

Schottky Barrier ◽

Deep Level ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Deep Level Defect

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Conductance Deep-Level Transient Spectroscopy and Current Transport Mechanisms in Au|Pt|n-GaN Schottky Barrier Diodes

Physics of the Solid State ◽

10.1134/s1063783420040095 ◽

2020 ◽

Vol 62 (4) ◽

pp. 636-641 ◽

Cited By ~ 1

Author(s):

M. Gassoumi

Keyword(s):

Schottky Barrier ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Current Transport ◽

Schottky Barrier Diodes ◽

Transport Mechanisms ◽

Transient Spectroscopy

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Analysis of the forward and reverse bias I-V characteristics on Au/PVA:Zn/n-Si Schottky barrier diodes in the wide temperature range

Journal of Applied Physics ◽

10.1063/1.3552599 ◽

2011 ◽

Vol 109 (5) ◽

pp. 054502 ◽

Cited By ~ 29

Author(s):

İlke Taşçıoğlu ◽

Umut Aydemir ◽

Şemsettin Altındal ◽

Barış Kınacı ◽

Süleyman Özçelik

Keyword(s):

Schottky Barrier ◽

Wide Temperature Range ◽

Reverse Bias ◽

Schottky Barrier Diodes ◽

Temperature Range

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A detailed analysis of current-voltage characteristics of Au/perylene-monoimide/n-Si Schottky barrier diodes over a wide temperature range

Journal of Applied Physics ◽

10.1063/1.3610394 ◽

2011 ◽

Vol 110 (2) ◽

pp. 024507 ◽

Cited By ~ 40

Author(s):

Ö. F. Yüksel ◽

M. Kuş ◽

N. Şimşir ◽

H. Şafak ◽

M. Şahin ◽

...

Keyword(s):

Detailed Analysis ◽

Schottky Barrier ◽

Wide Temperature Range ◽

Schottky Barrier Diodes ◽

Temperature Range ◽

Current Voltage ◽

Current Voltage Characteristics

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