A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's

Microelectronics Reliability ◽

10.1016/j.microrel.2018.03.004 ◽

2018 ◽

Vol 83 ◽

pp. 173-179 ◽

Cited By ~ 4

Author(s):

Hossein Mohammadi ◽

Huda Abdullah ◽

Chang Fu Dee ◽

P. Susthitha Menon

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted

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Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.2.111 ◽

2011 ◽

Vol 11 (2) ◽

pp. 111-120 ◽

Cited By ~ 6

Author(s):

Chung-Ha Suh

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Surrounding Gate

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A new two-dimensional short channel model for the drain current-voltage characteristics of a fully depleted SOI (silicon-on-insulator) MOSFET

International Journal of Electronics ◽

10.1080/00207219508926271 ◽

1995 ◽

Vol 79 (3) ◽

pp. 293-301 ◽

Cited By ~ 3

Author(s):

VANEETA AGGARWAL ◽

R. S. GUPTA

Keyword(s):

Channel Model ◽

Drain Current ◽

Silicon On Insulator ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Current Voltage ◽

Current Voltage Characteristics

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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Chinese Physics B ◽

10.1088/1674-1056/23/11/118505 ◽

2014 ◽

Vol 23 (11) ◽

pp. 118505 ◽

Cited By ~ 1

Author(s):

Shweta Tripathi

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Channel Potential ◽

Dual Material ◽

Lightly Doped Drain

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New Analytical Model for Subthreshold Current in Short-Channel Fully-Depleted SOI MOSFETs

10.7567/ssdm.1997.b-4-3 ◽

1997 ◽

Author(s):

Sergey Pidin ◽

Mitsumasa Koyanagi

Keyword(s):

Analytical Model ◽

Short Channel ◽

Fully Depleted ◽

Subthreshold Current

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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Two-Dimensional Analytical Modeling of Fully Depleted Short-Channel DG SOI MOSFET

2009 International Conference on Signal Processing Systems ◽

10.1109/icsps.2009.172 ◽

2009 ◽

Cited By ~ 2

Author(s):

Seyed Ebrahim Hosseini ◽

Mohammad Kazem Anvarifard ◽

Mahdi Gordi Armaki

Keyword(s):

Analytical Modeling ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Soi Mosfet

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New Analytical Model for Subthreshold Current in Short-Channel Fully-Depleted SOI MOSFETs

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.1264 ◽

1998 ◽

Vol 37 (Part 1, No. 3B) ◽

pp. 1264-1270 ◽

Cited By ~ 6

Author(s):

Sergey Pidin ◽

Mitsumasa Koyanagi

Keyword(s):

Analytical Model ◽

Short Channel ◽

Fully Depleted ◽

Subthreshold Current

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A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET’s

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760750 ◽

2008 ◽

Cited By ~ 1

Author(s):

T.K. Chiang

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Gate Stack ◽

Short Channel ◽

Soi Mosfet

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A Two-Dimensional (2D) Analytical Model for Sub-threshold Current and Sub-threshold Swing for Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET

International Journal of Thin Films Science and Technology ◽

10.18576/ijtfst/090204 ◽

2020 ◽

Vol 9 (2) ◽

pp. 111-118

Keyword(s):

Analytical Model ◽

Threshold Current ◽

Two Dimensional ◽

Short Channel ◽

Dg Mosfet

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

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