A Two-Dimensional (2D) Analytical Model for Sub-threshold Current and Sub-threshold Swing for Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET

doi:10.18576/ijtfst/090204

A Two-Dimensional (2D) Analytical Model for Sub-threshold Current and Sub-threshold Swing for Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET

International Journal of Thin Films Science and Technology ◽

10.18576/ijtfst/090204 ◽

2020 ◽

Vol 9 (2) ◽

pp. 111-118

Keyword(s):

Analytical Model ◽

Threshold Current ◽

Two Dimensional ◽

Short Channel ◽

Dg Mosfet

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A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Chinese Physics B ◽

10.1088/1674-1056/23/11/118505 ◽

2014 ◽

Vol 23 (11) ◽

pp. 118505 ◽

Cited By ~ 1

Author(s):

Shweta Tripathi

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Channel Potential ◽

Dual Material ◽

Lightly Doped Drain

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A New Two-Dimensional Analytical Model for Short-Channel Symmetrical Dual-Material Double-Gate Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.3283 ◽

2007 ◽

Vol 46 (6A) ◽

pp. 3283-3290 ◽

Cited By ~ 20

Author(s):

Te-Kuang Chiang ◽

Mei-Li Chen

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Two Dimensional ◽

Short Channel ◽

Dual Material

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A new two-dimensional analytical model for short-channel Tri-material gate-stack SOI MOSFET’s

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760750 ◽

2008 ◽

Cited By ~ 1

Author(s):

T.K. Chiang

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Gate Stack ◽

Short Channel ◽

Soi Mosfet

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Two-dimensional analytical model for drain induced barrier lowering (DIBL) in short channel MOSFETs

Proceedings of the IEEE SoutheastCon 2000. 'Preparing for The New Millennium' (Cat. No.00CH37105) ◽

10.1109/secon.2000.845589 ◽

2002 ◽

Cited By ~ 12

Author(s):

A.A. Mutlu ◽

M. Rahman

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Short Channel

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A two-dimensional analytical model of threshold voltages of short-channel MOSFETs with Gaussian-doped channels

IEEE Transactions on Electron Devices ◽

10.1109/16.2468 ◽

1988 ◽

Vol 35 (3) ◽

pp. 390-392 ◽

Cited By ~ 21

Author(s):

A. Dasgupta ◽

S.K. Lahiri

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Short Channel ◽

Threshold Voltages

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A two-dimensional analytical model for short channel junctionless double-gate MOSFETs

AIP Advances ◽

10.1063/1.4921086 ◽

2015 ◽

Vol 5 (5) ◽

pp. 057122 ◽

Cited By ~ 19

Author(s):

Chunsheng Jiang ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Analytical Model ◽

Double Gate ◽

Two Dimensional ◽

Short Channel

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A modified two dimensional analytical model for short-channel fully depleted SOI MESFET's

Microelectronics Reliability ◽

10.1016/j.microrel.2018.03.004 ◽

2018 ◽

Vol 83 ◽

pp. 173-179 ◽

Cited By ~ 4

Author(s):

Hossein Mohammadi ◽

Huda Abdullah ◽

Chang Fu Dee ◽

P. Susthitha Menon

Keyword(s):

Analytical Model ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted

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A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

Chinese Physics B ◽

10.1088/1674-1056/25/10/108503 ◽

2016 ◽

Vol 25 (10) ◽

pp. 108503 ◽

Cited By ~ 1

Author(s):

Shweta Tripathi

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Two Dimensional ◽

Gate Stack ◽

Short Channel ◽

Dg Mosfet ◽

Channel Potential

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A Two-Dimensional (2D) Analytical Model for the Potential Distribution and Threshold Voltage of Short-Channel Ion-Implanted GaAs MESFETs under Dark and Illuminated Conditions

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.1.040 ◽

2011 ◽

Vol 11 (1) ◽

pp. 40-50 ◽

Cited By ~ 2

Author(s):

Shweta Tripathi ◽

S. Jit

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Potential Distribution ◽

Two Dimensional ◽

Short Channel ◽

Ion Implanted

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Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2011.11.2.111 ◽

2011 ◽

Vol 11 (2) ◽

pp. 111-120 ◽

Cited By ~ 6

Author(s):

Chung-Ha Suh

Keyword(s):

Analytical Model ◽

Threshold Voltage ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Surrounding Gate

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