A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters

2017 ◽  
Vol 69 ◽  
pp. 1-16 ◽  
Author(s):  
Adelmo Ortiz-Conde ◽  
Andrea Sucre-González ◽  
Fabián Zárate-Rincón ◽  
Reydezel Torres-Torres ◽  
Roberto S. Murphy-Arteaga ◽  
...  
Keyword(s):  
Series Resistance ◽  
Extraction Methods ◽  
Model Parameters ◽  
Degradation Model ◽  
Mobility Degradation

On the extraction methods for MOSFET series resistance and mobility degradation using a single test device

2017 ◽  
Author(s):  
Adelmo Ortiz-Conde ◽  
Andrea Sucre-Gonzalez ◽  
Fabian Zarate-Rincon ◽  
Reydezel Torres-Torres ◽  
Roberto S. Murphy-Arteaga ◽  
...  
Keyword(s):  
Series Resistance ◽  
Extraction Methods ◽  
Single Test ◽  
Test Device ◽  
Mobility Degradation

scholarly journals In-Situ Measurement of Power Loss for Crystalline Silicon Modules Undergoing Thermal Cycling and Mechanical Loading Stress Testing

Energies ◽  
2020 ◽  
Vol 14 (1) ◽  
pp. 72
Author(s):  
Sergiu Spataru ◽  
Peter Hacke ◽  
Dezso Sera
Keyword(s):  
Thermal Cycling ◽  
Power Loss ◽  
Stress Testing ◽  
Series Resistance ◽  
Short Circuit ◽  
In Situ Measurement ◽  
Mechanical Degradation ◽  
Model Parameters ◽  
The Impact

An in-situ method is proposed for monitoring and estimating the power degradation of mc-Si photovoltaic (PV) modules undergoing thermo-mechanical degradation tests that primarily manifest through cell cracking, such as mechanical load tests, thermal cycling and humidity freeze tests. The method is based on in-situ measurement of the module’s dark current-voltage (I-V) characteristic curve during the stress test, as well as initial and final module flash testing on a Sun simulator. The method uses superposition of the dark I-V curve with final flash test module short-circuit current to account for shunt and junction recombination losses, as well as series resistance estimation from the in-situ measured dark I-Vs and final flash test measurements. The method is developed based on mc-Si standard modules undergoing several stages of thermo-mechanical stress testing and degradation, for which we investigate the impact of the degradation on the modules light I-V curve parameters, and equivalent solar cell model parameters. Experimental validation of the method on the modules tested shows good agreement between the in-situ estimated power degradation and the flash test measured power loss of the modules, of up to 4.31 % error (RMSE), as the modules experience primarily junction defect recombination and increased series resistance losses. However, the application of the method will be limited for modules experiencing extensive photo-current degradation or delamination, which are not well reflected in the dark I-V characteristic of the PV module.

A method to extract mobility degradation and total series resistance of fully-depleted SOI MOSFETs

2002 ◽  
Vol 49 (1) ◽  
pp. 82-88 ◽  
Author(s):  
F.J.G. Sanchez ◽  
A. Ortiz-Conde ◽  
A. Cerdeira ◽  
M. Estrada ◽  
D. Flandre ◽  
...  
Keyword(s):  
Series Resistance ◽  
Fully Depleted ◽  
Mobility Degradation

scholarly journals Are streamflow recession characteristics really characteristic?

2013 ◽  
Vol 17 (2) ◽  
pp. 817-828 ◽  
Author(s):  
M. Stoelzle ◽  
K. Stahl ◽  
M. Weiler
Keyword(s):  
Extraction Method ◽  
Storage Capacity ◽  
Extraction Methods ◽  
Model Parameters ◽  
Catchment Scale ◽  
Model Parameterization ◽  
Recession Curves ◽  
Recession Analysis ◽  
Meso Scale

Abstract. Streamflow recession has been investigated by a variety of methods, often involving the fit of a model to empirical recession plots to parameterize a non-linear storage–outflow relationship based on the dQ/dt−Q method. Such recession analysis methods (RAMs) are used to estimate hydraulic conductivity, storage capacity, or aquifer thickness and to model streamflow recession curves for regionalization and prediction at the catchment scale. Numerous RAMs have been published, but little is known about how comparably the resulting recession models distinguish characteristic catchment behavior. In this study we combined three established recession extraction methods with three different parameter-fitting methods to the power-law storage–outflow model to compare the range of recession characteristics that result from the application of these different RAMs. Resulting recession characteristics including recession time and corresponding storage depletion were evaluated for 20 meso-scale catchments in Germany. We found plausible ranges for model parameterization; however, calculated recession characteristics varied over two orders of magnitude. While recession characteristics of the 20 catchments derived with the different methods correlate strongly, particularly for the RAMs that use the same extraction method, not all rank the catchments consistently, and the differences among some of the methods are larger than among the catchments. To elucidate this variability we discuss the ambiguous roles of recession extraction procedures and the parameterization of the storage–outflow model and the limitations of the presented recession plots. The results suggest strong limitations to the comparability of recession characteristics derived with different methods, not only in the model parameters but also in the relative characterization of different catchments. A multiple-methods approach to investigating streamflow recession characteristics should be considered for applications whenever possible.

scholarly journals COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS

2017 ◽  
Vol 16 (2) ◽  
pp. 117
Author(s):  
Vladica Đorđević ◽  
Zlatica Marinković ◽  
Olivera Pronić-Rančić
Keyword(s):  
Comparative Analysis ◽  
Electron Mobility ◽  
Computer Aided Design ◽  
Wave Model ◽  
High Electron Mobility Transistor ◽  
Extraction Methods ◽  
Model Parameters ◽  
High Electron ◽  
High Electron Mobility ◽  
Noise Modeling

The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedures, which are described in detail within this paper. In order to validate the presented extraction methods, they were applied for the noise modeling of a specific GaAs high electron-mobility transistor. Finally, the obtained results were used for the comparative analysis of the presented extraction approaches in terms of accuracy, complexity and effectiveness.

Sign in / Sign up

Export Citation Format

Share Document