Rail to rail radiation hardened operational amplifier in standard CMOS technology with standard layout techniques

2016 ◽  
Vol 67 ◽  
pp. 99-103
Author(s):  
Peterson R. Agostinho ◽  
Odair L. Gonçalez ◽  
Gilson Wirth
Keyword(s):  
Operational Amplifier ◽  
Cmos Technology ◽  
Rail To Rail ◽  
Radiation Hardened

A Laser-Trimmed Rail-to-Rail Precision CMOS Operational Amplifier

2011 ◽  
Vol 58 (2) ◽  
pp. 75-79 ◽  
Author(s):  
Rahul Singh ◽  
Yves Audet ◽  
Yves Gagnon ◽  
Yvon Savaria ◽  
Étienne Boulais ◽  
...  
Keyword(s):  
Operational Amplifier ◽  
Rail To Rail

A Novel Rail-to-Rail Input Swing Threshold-Inverter Multi-Bit Quantizer Using Interpolation Technique for Sampled-Data Circuits

2021 ◽  
Author(s):  
Amir Hossein Miremadi ◽  
Omid Hashemipour
Keyword(s):  
Supply Voltage ◽  
Cmos Technology ◽  
Sampled Data ◽  
Power Supply Voltage ◽  
Rail To Rail ◽  
Efficient Performance ◽  
Interpolation Technique ◽  
Input Range ◽  
Threshold Inverter Quantization ◽  
Signal Conditioning Circuit

In this paper, a novel and simple multi-bit quantizer based on the threshold inverter quantization (TIQ) approach is presented for use in sampled-data circuits. The key part is a front-end signal conditioning circuit with the aid of the interpolation technique that makes it possible to realize a rail-to-rail input range operation over the conventional threshold inverter-based quantizer circuits while maintaining the benefits of the TIQ structure without employing any analog-intensive circuits such as current sources or amplifiers, thus achieving a digital-compatible implementation. Simulation results in TSMC 90-nm CMOS technology at a power-supply voltage of 1[Formula: see text]V confirm the efficient performance of the proposed circuit.

High temperature / radiation hardened capable ARM® Cortex®-M0 microcontrollers

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000046-000050
Author(s):  
R. Bannatyne ◽  
D. Gifford ◽  
K. Klein ◽  
C. Merritt
Keyword(s):  
High Temperature ◽  
Lower Cost ◽  
Cmos Technology ◽  
The Other ◽  
Device Performance ◽  
High Radiation ◽  
Plastic Package ◽  
Radiation Hardened ◽  
Temperature Radiation ◽  
On Chip

Abstract VORAGO Technologies has developed a pair of ARM Cortex M0 MCUs designed from the ground up to be high temperature capable. One of these devices is specifically developed for high temperature applications, the other adds capabilities that make it suitable for use in high radiation environments as well. These devices are fabricated using a modified version of commercial bulk 130nm CMOS technology utilizing our HARDSIL® technology, which provides immunity to the increased effects of latchup and EOS encountered at higher application temperatures. In addition to the processor these devices include features more typical of low temperature SoCs including on-chip memory, timers, and communications peripherals. In addition to the ceramic package and die format typically utilized at high temperature, a new lower-cost plastic package is available that has been characterized at higher temperatures. These devices have been characterized at temperatures up to 200C and results showing the latchup behavior and device performance are provided. Some of the tradeoffs involved in creating such devices are discussed, as well as some of the similarities and tradeoffs in creating a radiation hardened devices vs. a high temperature device.

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