A Novel Rail-to-Rail Input Swing Threshold-Inverter Multi-Bit Quantizer Using Interpolation Technique for Sampled-Data Circuits

In this paper, a novel and simple multi-bit quantizer based on the threshold inverter quantization (TIQ) approach is presented for use in sampled-data circuits. The key part is a front-end signal conditioning circuit with the aid of the interpolation technique that makes it possible to realize a rail-to-rail input range operation over the conventional threshold inverter-based quantizer circuits while maintaining the benefits of the TIQ structure without employing any analog-intensive circuits such as current sources or amplifiers, thus achieving a digital-compatible implementation. Simulation results in TSMC 90-nm CMOS technology at a power-supply voltage of 1[Formula: see text]V confirm the efficient performance of the proposed circuit.

3-Bit Analog-to-Digital Converter Using Multi-State Spatial Wave-Function Switched FETs

Multi-valued logic using multi-state spatial wavefunction switched (SWS)-FETs offers overall reduction in size and power as compared to conventional FET based circuits. This paper presents the design of compact 3-bit Analog-to-Digital Converters (ADC) implemented with SWS-FETs. A novel multi-valued Threshold Inverter Quantization (TIQ) based voltage comparator using SWS FET transistors has been proposed. Unlike conventional FETs, SWS-FETs are comprised of two or more vertically stacked coupled quantum well or quantum dot channels, and the spatial location of carriers within these channels is used to encode the logic states (00), (01), (10) and (11). The SWS-FET logic and circuit models for complementary (n- and p-channel) using 20 nm technology are presented. The digital logic circuit in the ADC is developed using SWS-FET based quaternary logic circuits. The accuracy of the SWS-FET circuits is verified by SWS-FET models in Cadence. The simulations for the SWS FET are based on integration of the Berkeley Short-channel IGFET Model (BSIM4.6) and the Analog Behavioral Model (ABM). The ADC circuit design using SWS-FETs reduce the number of transistors by 55% compared with CMOS counterpart.