Thermoreflectance mapping observation of Power MOSFET under UIS avalanche breakdown condition

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1628-1633 ◽  
Author(s):  
Koichi Endo ◽  
Kenji Norimatsu ◽  
Tomonori Nakamura ◽  
Takashi Setoya ◽  
Koji Nakamae
Keyword(s):  
Avalanche Breakdown ◽  
Power Mosfet ◽  
Mapping Observation

A model for avalanche breakdown calculation in low-voltage trench power MOSFET devices

2012 ◽  
Vol 28 (1) ◽  
pp. 015007 ◽  
Author(s):  
C Pace ◽  
S Pierro ◽  
V Cilia ◽  
G Consentino
Keyword(s):  
Low Voltage ◽  
Avalanche Breakdown ◽  
Power Mosfet

Studying the Use of Public Spaces in the Library

2013 ◽  
Author(s):  
Francine May
Keyword(s):  
Canadian Journal ◽  
Public Spaces ◽  
Library Science ◽  
Full Paper ◽  
Public Places ◽  
The Public ◽  
Observational Technique ◽  
Mental Mapping ◽  
Mapping Observation

Methods for studying the public places of libraries, including mental mapping, observation and patron mapping are reviewed. Reflections on the experience of adapting an observational technique for use in multiple different library spaces are shared. Sont passées en revue les méthodes pour étudier la place publique des bibliothèques, y compris les représentations mentales, l’observation et la catégorisation des usagers. L’auteure partage ses réflexions sur l’expérience d’adapter une technique d’observation à différents espaces de bibliothèque. ***Full paper in the Canadian Journal of Information and Library Science***

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

2D carrier Density Mapping Using SNDM-dC/dV and dC/dz of SiC Power MOSFET

2019 ◽  
Author(s):  
Jing-jiang Yu ◽  
T. Yamaoka ◽  
T. Aiso ◽  
K. Watanabe ◽  
Y. Shikakura ◽  
...  
Keyword(s):  
Carrier Density ◽  
Environmental Control ◽  
Boundary Region ◽  
Power Mosfet ◽  
Dopant Profiling ◽  
Density Mapping ◽  
Resolution Observation ◽  
Develop Software ◽  
20 Nm ◽  
High Resolution Observation

Abstract Scanning nonlinear dielectric microscopy is continuously developed as an AFM-derived method for 2D dopant profiling of semiconductor devices. In this paper, the authors apply 2D carrier density mapping to Si and SiC and succeed a high resolution observation of the SiC planar power MOSFET. Furthermore, they develop software that combines dC/dV and dC/dz images and expresses both density and polarity in a single distribution image. The discussion provides the details of AFM experiments that were conducted using a Hitachi environmental control AFM5300E system. The results indicated that the carrier density decreases in the boundary region between n plus source and p body. The authors conclude that although the resolutions of dC/dV and dC/dz are estimated to be 20 nm or less and 30 nm or less, respectively, there is a possibility that the resolution can be further improved by using a sharpened probe.

3D Integrated Power—A Discrete Perspective

2015 ◽  
Author(s):  
Ian Kearney ◽  
Stephen Brink
Keyword(s):  
Heat Dissipation ◽  
Automatic Test Equipment ◽  
Systematic Analysis ◽  
Power Mosfet ◽  
Root Cause ◽  
Industry Standard ◽  
Bona Fide ◽  
Process Issue ◽  
Board Level ◽  
3D Package

Abstract The shift in power conversion and power management applications to thick copper clip technologies and thinner silicon dies enable high-current connections (overcoming limitations of common wire bond) and enhance the heat dissipation properties of System-in-Package solutions. Powerstage innovation integrates enhanced gate drivers with two MOSFETs combining vertical current flow with a lateral power MOSFET. It provides a low on-resistance and requires an extremely low gate charge with industry-standard package outlines - a combination not previously possible with existing silicon platforms. These advancements in both silicon and 3D Multi-Chip- Module packaging complexity present multifaceted challenges to the failure analyst. The various height levels and assembly interfaces can be difficult to deprocess while maintaining all the critical evidence. Further complicating failure isolation within the system is the integration of multiple chips, which can lead to false positives. Most importantly, the discrete MOSFET all too often gets overlooked as just a simple threeterminal device leading to incorrect deductions in determining true root cause. This paper presents the discrete power MOSFET perspective amidst the competing forces of the system-to-board-level failure analysis. It underlines the requirement for diligent analysis at every step and the importance as an analyst to contest the conflicting assumptions of challenging customers. Automatic Test Equipment (ATE) data-logs reported elevated power MOSFET leakage. Initial assumptions believed a MOSFET silicon process issue existed. Through methodical anamnesis and systematic analysis, the true failure was correctly isolated and the power MOSFET vindicated. The authors emphasize the importance of investigating all available evidence, from a macro to micro 3D package perspective, to achieve the bona fide path forward and true root cause.

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