Reverse-bias stress of high electron mobility transistors: Correlation between leakage current, current collapse and trap characteristics

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1456-1460 ◽  
Author(s):  
I. Rossetto ◽  
M. Meneghini ◽  
G. Meneghesso ◽  
E. Zanoni
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
Reverse Bias ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors ◽  
Current Collapse

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

2003 ◽  
Vol 83 (8) ◽  
pp. 1650-1652 ◽  
Author(s):  
J. A. Mittereder ◽  
S. C. Binari ◽  
P. B. Klein ◽  
J. A. Roussos ◽  
D. S. Katzer ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors ◽  
Current Collapse

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

2014 ◽  
Vol 54 (6-7) ◽  
pp. 1293-1298 ◽  
Author(s):  
Wei-Wei Chen ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Sheng-Lei Zhao ◽  
Jie-Jie Zhu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Reverse Bias ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors

scholarly journals Gate Capacitance and Off-State Characteristics of E-Mode p-GaN Gate AlGaN/GaN High-Electron-Mobility Transistors After Gate Stress Bias

2021 ◽  
Author(s):  
Yu-Chen Lai ◽  
Yi-Nan Zhong ◽  
Ming-Yan Tsai ◽  
Yue-Ming Hsin
Keyword(s):  
Leakage Current ◽  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Gate Capacitance ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Higher Power ◽  
State Capacitance

AbstractThis study investigated the gate capacitance and off-state characteristics of 650-V enhancement-mode p-GaN gate AlGaN/GaN high-electron-mobility transistors after various degrees of gate stress bias. A significant change was observed in the on-state capacitance when the gate stress bias was greater than 6 V. The corresponding threshold voltage exhibited a positive shift at low gate stress and a negative shift when the gate stress was greater than 6 V, which agreed with the shift observation from the I–V measurement. Moreover, the off-state leakage current increased significantly after the gate stress exceeded 6 V during the off-state characterization although the devices could be biased up to 1000 V without breakdown. The increase in the off-state leakage current would lead to higher power loss.

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