Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

2014 ◽  
Vol 105 (17) ◽  
pp. 173507 ◽  
Author(s):  
Wei-Wei Chen ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Jie-Jie Zhu ◽  
Yong-He Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Reverse Bias ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors ◽  
Degradation Modes

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

2014 ◽  
Vol 54 (6-7) ◽  
pp. 1293-1298 ◽  
Author(s):  
Wei-Wei Chen ◽  
Xiao-Hua Ma ◽  
Bin Hou ◽  
Sheng-Lei Zhao ◽  
Jie-Jie Zhu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Reverse Bias ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

2003 ◽  
Vol 83 (8) ◽  
pp. 1650-1652 ◽  
Author(s):  
J. A. Mittereder ◽  
S. C. Binari ◽  
P. B. Klein ◽  
J. A. Roussos ◽  
D. S. Katzer ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Bias Stress ◽  
Electron Mobility Transistors ◽  
Current Collapse

scholarly journals The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Sven Besendörfer ◽  
Elke Meissner ◽  
Farid Medjdoub ◽  
Joff Derluyn ◽  
Jochen Friedrich ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Reverse Bias ◽  
Schottky Diodes ◽  
Forward Bias ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Conductive Atomic Force Microscopy ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
The Impact

Abstract GaN epitaxially grown on Si is a material for power electronics that intrinsically shows a high density of dislocations. We show by Conductive Atomic Force Microscopy (C-AFM) and Defect Selective Etching that even for materials with similar total dislocation densities substantially different subsets of dislocations with screw component act as current leakage paths within the AlGaN barrier under forward bias. Potential reasons are discussed and it will be directly shown by an innovative experiment that current voltage forward characteristics of AlGaN/GaN Schottky diodes shift to lower absolute voltages when such dislocations are present within the device. A local lowering of the Schottky barrier height around conductive dislocations is identified and impurity segregation is assumed as responsible root cause. While dislocation related leakage current under low reverse bias could not be resolved, breakdown of AlGaN/GaN Schottky diodes under high reverse bias correlates well with observed conductive dislocations as measured by C-AFM. If such dislocations are located near the drain side of the gate edge, failure of the gate in terms of breakdown or formation of percolation paths is observed for AlGaN/GaN high electron mobility transistors.

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