High temperature gate-bias and reverse-bias tests on SiC MOSFETs

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1771-1773 ◽  
Author(s):  
L. Yang ◽  
A. Castellazzi
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Gate Bias

High-Temperature Reverse-Bias Stressing of Thin Gate Oxides in Power Transistors

2014 ◽  
Vol 64 (8) ◽  
pp. 45-52
Author(s):  
S. A. Suliman ◽  
O. O. Awadelkarim ◽  
J. Hao ◽  
M. Rioux
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Gate Oxides ◽  
Power Transistors

Degradation mechanism of D-mode GaN HEMT based on high temperature reverse bias stress

2021 ◽  
Author(s):  
Meng Lu ◽  
Yiqiang Chen ◽  
Min Liao ◽  
Chang Liu ◽  
Shuaizhi Zheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Reverse Bias ◽  
Degradation Mechanism ◽  
Bias Stress ◽  
Gan Hemt

1700V, 5.5mOhm-cm2 4H-SiC DMOSFET with Stable 225°C Operation

2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
High Temperatures ◽  
Threshold Voltage ◽  
Room Temperature ◽  
Gate Bias ◽  
Threshold Voltage Shift ◽  
Device Reliability ◽  
Bias Temperature Stress ◽  
High Temperature Operation

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.

Dependence of ${V}_{\text {TH}}$ Stability on Gate-Bias Under Reverse-Bias Stress in E-mode GaN MIS-FET

2018 ◽  
Vol 39 (3) ◽  
pp. 413-416 ◽  
Author(s):  
Mengyuan Hua ◽  
Jin Wei ◽  
Qilong Bao ◽  
Zhaofu Zhang ◽  
Zheyang Zheng ◽  
...  
Keyword(s):  
Reverse Bias ◽  
Gate Bias ◽  
Bias Stress

End of life and acceleration modelling for power diodes under high temperature reverse bias stress

2016 ◽  
Vol 64 ◽  
pp. 458-463 ◽  
Author(s):  
O. Schilling ◽  
K. Leitner ◽  
K.-D. Schulze ◽  
F. Umbach
Keyword(s):  
High Temperature ◽  
End Of Life ◽  
Reverse Bias ◽  
Power Diodes ◽  
Bias Stress
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