Reliability of sintered Ag80–Al20 die attach nanopaste for high temperature applications on SiC power devices

2013 ◽  
Vol 53 (3) ◽  
pp. 473-480 ◽  
Author(s):  
Vemal Raja Manikam ◽  
Khairunisak Abdul Razak ◽  
Kuan Yew Cheong
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Die Attach ◽  
Temperature Applications

LTCC Embedding of SiC Power Devices for High Temperature Applications over 400 °C

2020 ◽  
Author(s):  
Benjamin Bayer ◽  
Mario Groccia ◽  
Hoang Linh Bach ◽  
Christoph Friedrich Bayer ◽  
Andreas Schletz ◽  
...  
Keyword(s):  
High Temperature ◽  
Power Devices ◽  
Temperature Applications

Evaluation of Low Cost, High Temperature Die and Substrate Attach Materials for Silicon Carbide (SiC) Power Modules

2018 ◽  
Vol 2018 (1) ◽  
pp. 000317-000325
Author(s):  
Sayan Seal ◽  
Brandon Passmore ◽  
Brice McPherson
Keyword(s):  
High Temperature ◽  
Room Temperature ◽  
Operating Conditions ◽  
Acoustic Microscopy ◽  
Switching Frequency ◽  
Power Devices ◽  
Formidable Challenge ◽  
Die Attach ◽  
Power Modules ◽  
High Switching Frequency

Abstract The performance of SiC power devices has demonstrated superior characteristics as compared to conventional Silicon (Si) devices. Some of the advantages of SiC power devices over Si include higher voltage blocking capability, low specific on-resistance, high switching frequency, high temperature operation, and high power density. Thus, SiC modules are capable of processing significant levels of power within much smaller volumes compared with its Si counterparts. These high thermal loads present a formidable challenge in integrating SiC devices in power modules. For example, known-good materials and processes for silicon power modules are not rated at the aggressive operating conditions associated with SiC devices. Two of the most critical interfaces in a power electronics module are the die-attach and substrate- attach. A degradation in these interfaces often results in potentially catastrophic electrical and thermal failure. Therefore, it is very important to thoroughly evaluate die-attach materials before implementing them in SiC power modules. This paper presents the methodology for the evaluation of die attach materials for SiC power modules. Preforms of a lead-free high-temperature attach material were used to perform a die and substrate attach process on a conventional power module platform. The initial attach quality was inspected using non- destructive methods consisting of acoustic microscopy and x-ray scanning. Die attach and substrate attach voiding of < 5% was obtained indicating a very good attach quality. Cross-sectioning techniques were used to validate the inspection methods. The initial attach strength was measured using pull tests and shear tests. The measurements were repeated at the rated temperature of the module to ensure that the properties did not degrade excessively at the service temperature. At the rated module temperature of 175 °C, the die bonding strength was found to be ~ 75 kg. This was only 25% lower than the strength at room temperature. In addition, the contact pull strength was measured to be > 90 kg at 175 °C, which was 25% lower than the value measured at room temperature. The effect of power cycling and thermal cycling on the quality and strength of the die and substrate attach layers was also investigated.

Silver micropowders as SiC die attach material for high temperature applications

2012 ◽  
Author(s):  
Ryszard Kisiel ◽  
Zbigniew Szczepanski ◽  
Piotr Firek ◽  
Jakub Grochowski ◽  
Marcin Mysliwiec ◽  
...  
Keyword(s):  
High Temperature ◽  
Die Attach ◽  
Temperature Applications

SiC Die Attach for High-Temperature Applications

2013 ◽  
Vol 43 (3) ◽  
pp. 695-701 ◽  
Author(s):  
A. Drevin-Bazin ◽  
F. Lacroix ◽  
J. -F. Barbot
Keyword(s):  
High Temperature ◽  
Die Attach ◽  
Temperature Applications
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