Hot-carrier-induced time dependent dielectric breakdown in high voltage pMOSFETs

2011 ◽  
Vol 51 (8) ◽  
pp. 1283-1288 ◽  
Author(s):  
F. Alagi
Keyword(s):  
High Voltage ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Hot Carrier ◽  
Time Dependent Dielectric Breakdown

Hot carrier degradation and time-dependent dielectric breakdown in oxides

1999 ◽  
Vol 49 (1-2) ◽  
pp. 27-40 ◽  
Author(s):  
G. Groeseneken ◽  
R. Degraeve ◽  
T. Nigam ◽  
G. Van den bosch ◽  
H.E. Maes
Keyword(s):  
Dielectric Breakdown ◽  
Time Dependent ◽  
Hot Carrier ◽  
Time Dependent Dielectric Breakdown ◽  
Hot Carrier Degradation

scholarly journals Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

2017 ◽  
Vol 64 (8) ◽  
pp. 3132-3138 ◽  
Author(s):  
Shireen Warnock ◽  
Allison Lemus ◽  
Jungwoo Joh ◽  
Srikanth Krishnan ◽  
Sameer Pendharkar ◽  
...  
Keyword(s):  
High Voltage ◽  
Dielectric Breakdown ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Assessment of Reliability of cap layers used in Cu-Black DiamondTM Interconnects

2003 ◽  
Vol 766 ◽  
Author(s):  
Ahila Krishnamoorthy ◽  
N.Y. Huang ◽  
Shu-Yunn Chong
Keyword(s):  
Dielectric Layer ◽  
Dielectric Breakdown ◽  
Copper Ions ◽  
Dielectric Strength ◽  
Time Dependent ◽  
Breakdown Field ◽  
Field Range ◽  
Time Dependent Dielectric Breakdown ◽  
Voltage Ramp ◽  
Low K

AbstractBlack DiamondTM. (BD) is one of the primary candidates for use in copper-low k integration. Although BD is SiO2 based, it is vastly different from oxide in terms of dielectric strength and reliability. One of the main reliability concerns is the drift of copper ions under electric field to the surrounding dielectric layer and this is evaluated by voltage ramp (V-ramp) and time dependent dielectric breakdown (TDDB). Metal 1 and Metal 2 intralevel comb structures with different metal widths and spaces were chosen for dielectric breakdown studies. Breakdown field of individual test structures were obtained from V-ramp tests in the temperature range of 30 to 150°C. TDDB was performed in the field range 0.5 – 2 MV/cm. From the leakage between combs at the same level (either metal 1 or metal 2) Cu drift through SiC/BD or SiN/BD interface was characterized. It was found that Cu/barrier and barrier/low k interfaces functioned as easy paths for copper drift thereby shorting the lines. Cu/SiC was found to provide a better interface than Cu/SiN.

Noise Analysis of the Leakage Current in Time-Dependent Dielectric Breakdown in a GaN SLCFET

2021 ◽  
Vol 68 (5) ◽  
pp. 2220-2225
Author(s):  
Stefano Dalcanale ◽  
Michael J. Uren ◽  
Josephine Chang ◽  
Ken Nagamatsu ◽  
Justin A. Parke ◽  
...  
Keyword(s):  
Leakage Current ◽  
Dielectric Breakdown ◽  
Noise Analysis ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown

Study of Time Dependent Dielectric Breakdown Distribution in Ultrathin Gate Oxide

2007 ◽  
Vol 46 (No. 28) ◽  
pp. L691-L692 ◽  
Author(s):  
Takashi Miyakawa ◽  
Tsutomu Ichiki ◽  
Junichi Mitsuhashi ◽  
Kazutoshi Miyamoto ◽  
Tetsuo Tada ◽  
...  
Keyword(s):  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Time Dependent ◽  
Time Dependent Dielectric Breakdown
Sign in / Sign up

Export Citation Format

Share Document