Experimental study and numerical investigation on the formation of single event gate damages induced on medium voltage power MOSFET

2010 ◽  
Vol 50 (9-11) ◽  
pp. 1842-1847 ◽  
Author(s):  
G. Busatto ◽  
G. Currò ◽  
F. Iannuzzo ◽  
A. Porzio ◽  
A. Sanseverino ◽  
...  
Keyword(s):  
Experimental Study ◽  
Numerical Investigation ◽  
Single Event ◽  
Power Mosfet ◽  
Medium Voltage

3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET

2021 ◽  
Author(s):  
Ting Li ◽  
Dongqing Hu ◽  
Yunpeng Jia ◽  
Xintian Zhou ◽  
Yu Wu
Keyword(s):  
Simulation Study ◽  
3D Simulation ◽  
Single Event ◽  
Power Mosfet

Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices

2020 ◽  
Vol 67 (10) ◽  
pp. 4340-4345
Author(s):  
Jian-Xiong Bi ◽  
Ying Wang ◽  
Xue Wu ◽  
Xing-ji Li ◽  
Jian-qun Yang ◽  
...  
Keyword(s):  
Single Event ◽  
Power Mosfet

Experimental and Numerical investigation about SEB/SEGR of Power MOSFET

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1711-1716 ◽  
Author(s):  
G. Busatto ◽  
A. Porzio ◽  
F. Velardi ◽  
F. Iannuzzo ◽  
A. Sanseverino ◽  
...  
Keyword(s):  
Numerical Investigation ◽  
Power Mosfet

Experimental study on the single event latchup simulated by a pulse laser

2009 ◽  
Vol 30 (6) ◽  
pp. 064009 ◽  
Author(s):  
Yang Shiyu ◽  
Cao Zhou ◽  
Li Danming ◽  
Xue Yuxiong ◽  
Tian Kai
Keyword(s):  
Experimental Study ◽  
Pulse Laser ◽  
Single Event ◽  
Single Event Latchup

An Experimental and Numerical Investigation Into the Mechanisms of Rotating Instability

2001 ◽  
Author(s):  
Joachim März ◽  
Chunill Hah ◽  
Wolfgang Neise
Keyword(s):  
Experimental Study ◽  
Numerical Investigation ◽  
Axial Flow ◽  
Rotating Stall ◽  
Tip Clearance ◽  
Stable Mode ◽  
Tip Clearance Flow ◽  
Double Phase ◽  
Clearance Flow ◽  
Rotating Instability

This paper reports on an experimental and numerical investigation aimed at understanding the mechanisms of rotating instabilities in a low speed axial flow compressor. The phenomena of rotating instabilities in the current compressor were first identified with an experimental study. Then, an unsteady numerical method was applied to confirm the phenomena and to interrogate the physical mechanisms behind them. The experimental study was conducted with high-resolution pressure measurements at different clearances, employing a double phase-averaging technique. The numerical investigation was performed with an unsteady 3-D Navier-Stokes method that solves for the entire blade row. The current study reveals that a vortex structure forms near the leading edge plane. This vortex is the result of interactions among the classical tip-clearance flow, axially reversed endwall flow, and the incoming flow. The vortex travels from the suction side to the pressure side of the passage at roughly half of the rotor speed. The formation and movement of this vortex seem to be the main causes of unsteadiness when rotating instability develops. Due to the nature of this vortex, the classical tip-clearance flow does not spill over into the following blade passage. This behavior of the tip-clearance flow is why the compressor operates in a stable mode even with the rotating instability, unlike traditional rotating stall phenomena.

scholarly journals Erratum to: Experimental study on heavy ion single-event effects in flash-based FPGAs

2016 ◽  
Vol 27 (3) ◽  
Author(s):  
Zhen-Lei Yang ◽  
Xiao-Hui Wang ◽  
Hong Su ◽  
Jie Liu ◽  
Tian-Qi Liu ◽  
...  
Keyword(s):  
Experimental Study ◽  
Heavy Ion ◽  
Single Event ◽  
Single Event Effects

scholarly journals Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

2019 ◽  
Vol 8 (4) ◽  
Author(s):  
Erman Azwan Yahya ◽  
Ramani Kannan ◽  
Lini Lee
Keyword(s):  
Simulation Study ◽  
Electronic Device ◽  
Electronic System ◽  
Heavy Ion ◽  
Oxide Semiconductor ◽  
Power Electronic ◽  
Single Event ◽  
Device Structure ◽  
Power Mosfet ◽  
Heavy Ion Radiation

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

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