3D Simulation Study of Single Event Sensitivity for 200V Planar Gate Power MOSFET

2021 ◽  
Author(s):  
Ting Li ◽  
Dongqing Hu ◽  
Yunpeng Jia ◽  
Xintian Zhou ◽  
Yu Wu
Keyword(s):  
Simulation Study ◽  
3D Simulation ◽  
Single Event ◽  
Power Mosfet

scholarly journals Simulation study of single event effects sensitivity on commercial power MOSFET with single heavy ion radiation

2019 ◽  
Vol 8 (4) ◽  
Author(s):  
Erman Azwan Yahya ◽  
Ramani Kannan ◽  
Lini Lee
Keyword(s):  
Simulation Study ◽  
Electronic Device ◽  
Electronic System ◽  
Heavy Ion ◽  
Oxide Semiconductor ◽  
Power Electronic ◽  
Single Event ◽  
Device Structure ◽  
Power Mosfet ◽  
Heavy Ion Radiation

High-frequency semiconductor devices are key components for advanced power electronic system that require fast switching speed. Power Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is the most famous electronic device that are used in much power electronic system. However, the application such as space borne, military and communication system needs Power MOSFET to withstand in radiation environments. This is very challenging for the engineer to develop a device that continuously operated without changing its electrical behavior due to radiation. Therefore, the main objective of this study is to investigate the Single Event Effect (SEE) sensitivity by using Heavy Ion Radiation on the commercial Power MOSFET. A simulation study using Sentaurus Synopsys TCAD software for process simulation and device simulation was done. The simulation results reveal that single heavy ion radiation has affected the device structure and fluctuate the I-V characteristic of commercial Power MOSFET.

Simulation study of single-event gate rupture using radiation-hardened stripe cell power mosfet structures

2003 ◽  
Vol 50 (6) ◽  
pp. 2256-2264 ◽  
Author(s):  
J.L. Titus ◽  
Yen-Sheng Su ◽  
M.W. Savage ◽  
R.V. Mickevicius ◽  
C.F. Wheatley
Keyword(s):  
Simulation Study ◽  
Single Event ◽  
Power Mosfet ◽  
Radiation Hardened

Simulation Study of Single-Event Burnout in 1.5-kV 4H-SiC JTE Termination

2021 ◽  
pp. 1-5
Author(s):  
Cheng-Hao Yu ◽  
Ying Wang ◽  
Meng-Tian Bao ◽  
Xing-Ji Li ◽  
Jian-Qun Yang ◽  
...  
Keyword(s):  
Simulation Study ◽  
Single Event

Simulation Study on Single-Event Burnout in Rated 1.2-kV 4H-SiC Super-Junction VDMOS

2021 ◽  
pp. 1-7
Author(s):  
Cheng-Hao Yu ◽  
Ying Wang ◽  
Meng-Tian Bao ◽  
Xing-Ji Li ◽  
Jian-Qun Yang ◽  
...  
Keyword(s):  
Simulation Study ◽  
Single Event

Single-Event Burnout Hardening Method and Evaluation in SiC Power MOSFET Devices

2020 ◽  
Vol 67 (10) ◽  
pp. 4340-4345
Author(s):  
Jian-Xiong Bi ◽  
Ying Wang ◽  
Xue Wu ◽  
Xing-ji Li ◽  
Jian-qun Yang ◽  
...  
Keyword(s):  
Single Event ◽  
Power Mosfet

Simulation study of semi-superjunction power MOSFET with SiGe pillar

2010 ◽  
Vol 47 (2) ◽  
pp. 314-324 ◽  
Author(s):  
Ying Wang ◽  
Hai-fan Hu ◽  
Chao Cheng
Keyword(s):  
Simulation Study ◽  
Power Mosfet
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