Cu wire bond parameter optimization on various bond pad metallization and barrier layer material schemes

2011 ◽  
Vol 51 (1) ◽  
pp. 81-87 ◽  
Author(s):  
Luke England ◽  
Siew Tze Eng ◽  
Chris Liew ◽  
Hock Heng Lim
Keyword(s):  
Parameter Optimization ◽  
Barrier Layer ◽  
Layer Material ◽  
Wire Bond ◽  
Bond Parameter

Evaluation of Praseodymium and Gadolinium Doped Ceria as a Possible Barrier Layer Material for Solid Oxide Cells

2019 ◽  
Vol 91 (1) ◽  
pp. 1165-1172 ◽  
Author(s):  
Bartosz Jerzy Kamecki ◽  
Jakub Karczewski ◽  
Piotr Jasinski ◽  
Sebastian Molin
Keyword(s):  
Barrier Layer ◽  
Solid Oxide ◽  
Doped Ceria ◽  
Layer Material ◽  
Gadolinium Doped Ceria

Electromigration characteristics of TiN barrier layer material

1995 ◽  
Vol 16 (6) ◽  
pp. 230-232 ◽  
Author(s):  
Jiang Tao ◽  
N.W. Cheung ◽  
Chenming Hu
Keyword(s):  
Barrier Layer ◽  
Layer Material

AgNi Alloy As a Suitable Barrier Layer Material for NbFeSb-Based Half-Heusler Thermoelectric Modules

2019 ◽  
Vol 48 (10) ◽  
pp. 6815-6822 ◽  
Author(s):  
Jiaxu Zhu ◽  
Fusheng Liu ◽  
Bo Gong ◽  
Xiao Wang ◽  
Weiqin Ao ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Thermoelectric Modules ◽  
Layer Material

Effectiveness of Barrier Layer Metallizations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections

2013 ◽  
Vol 10 (4) ◽  
pp. 163-170
Author(s):  
S. T. Riches ◽  
C. Johnston ◽  
A. Lui
Keyword(s):  
High Temperature ◽  
Barrier Layer ◽  
Failure Modes ◽  
Critical Factor ◽  
Silicon On Insulator ◽  
Wire Bond ◽  
Soi Devices ◽  
Operating Temperatures ◽  
Temperature Storage

Silicon on insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >200°C, with device lifetimes of 5 y at 225°C being declared. One of the key areas governing the lifetime of the packaged electronic devices is the reliability of the wire bond interconnection between the device and the package or substrate connection. Extended temperature storage testing at 250°C of packaged SOI devices has highlighted end of life failure modes associated with wire bond connections. SOI devices are normally supplied with an aluminum based bond pad metallization, which are not suitable for direct connection of Au wire at operating temperatures of >125°C, due to the formation of Au-Al intermetallics. It is possible to postprocess silicon wafers to deposit barrier and connection materials to create a monometallic Au-Au joint at the surface. For long term endurance at temperatures >200°C, the effectiveness of the barrier layer in preventing diffusion of the aluminum bond pad metallization to interact with the Au is a critical factor. This paper presents results of studies carried out on two postprocess metallization systems Au/TiW and Au/Pd/Ni deposited onto aluminum bond pads, which have been Au wire bonded and exposed to 250°C temperature storage for up to 13,000 h. The results have shown that the barrier layers are not effective in preventing diffusion of the aluminum bond pad metallization to create Au-Al based intermetallics. The results are compared with Al-1%Si wire bonding to the aluminum bond pad, where the second wedge bond is attached to a Au/Ni plated metallization, where the degradation appears to be less severe. Recommendations for designing stable wire bond interconnection systems for extended high temperature operation will be presented.

Effectiveness of Barrier Layer Metallisations in Long Term High Temperature Endurance Tests on Wire Bond Interconnections

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000229-000236
Author(s):  
S T Riches ◽  
C Johnston ◽  
A Lui
Keyword(s):  
High Temperature ◽  
Barrier Layer ◽  
Failure Modes ◽  
Silicon On Insulator ◽  
Post Process ◽  
Wire Bond ◽  
Soi Devices ◽  
Operating Temperatures ◽  
Temperature Storage

Silicon on Insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >200°C, with device lifetimes of 5 years at 225°C being declared. One of the key areas governing the lifetime of the packaged electronic devices is the reliability of the wire bond interconnection between the device and the package or substrate connection. Extended temperature storage testing at 250°C of packaged SOI devices has highlighted end of life failure modes associated with wire bond connections. SOI devices are normally supplied with an aluminium based bond pad metallisation, which are not suitable for direct connection of Au wire at operating temperatures of >125°C, due to the formation of Au-Al intermetallics. It is possible to post-process silicon wafers to deposit barrier and connection materials to create a mono-metallic Au-Au joint at the surface. For long term endurance at temperatures >200°C, the effectiveness of the barrier layer in preventing diffusion of the aluminium bond pad metallisation to interact with the Au is a critical factor. This paper presents results of studies carried out on two post-process metallisation systems Au/TiW and Au/Pd/Ni deposited onto aluminium bond pads, which have been Au wire bonded and exposed to 250°C temperature storage for up to 13,000 hours. The results have shown that the barrier layers are not effective in preventing diffusion of the aluminium bond pad metallisation to create Au-Al based intermetallics. The results are compared with Al-1%Si wire bonding to the aluminium bond pad, where the 2nd wedge bond is attached to a Au/Ni plated metallisation, where the degradation appears to be less severe. Recommendations for designing stable wire bond interconnection systems for extended high temperature operation will be presented.

W18O49nanowire composites as novel barrier layers for Li–S batteries based on high loading of commercial micro-sized sulfur

RSC Advances ◽  
2016 ◽  
Vol 6 (18) ◽  
pp. 15234-15239 ◽  
Author(s):  
Weikun Zhang ◽  
Chong Lin ◽  
Shan Cong ◽  
Junyu Hou ◽  
Bin Liu ◽  
...  
Keyword(s):  
Barrier Layer ◽  
Specific Capacity ◽  
High Loading ◽  
Shuttle Effect ◽  
Barrier Layers ◽  
Layer Material

A novel barrier layer material, nonstoichiometric W18O49nanowire is reported to alleviate the undesirable shuttle effect, thereby largely boosting the specific capacity and cyclability of Li–S batteries.

Deposited emulsion particles in the pores of aluminum oxide film

1978 ◽  
Vol 36 (1) ◽  
pp. 450-451
Author(s):  
Michio Ashida ◽  
Yasukiyo Ueda
Keyword(s):  
Oxide Film ◽  
Acid Solution ◽  
Barrier Layer ◽  
Colloidal Particles ◽  
Oxalic Acid Solution ◽  
Anodic Oxide ◽  
Anodic Oxide Film ◽  
Carbon Replica ◽  
Sectioning Method ◽  
Thin Sectioning

An anodic oxide film is formed on aluminum in an acidic elecrolyte during anodizing. The structure of the oxide film was observed directly by carbon replica method(l) and ultra-thin sectioning method(2). The oxide film consists of barrier layer and porous layer constructed with fine hexagonal cellular structure. The diameter of micro pores and the thickness of barrier layer depend on the applying voltage and electrolyte. Because the dimension of the pore corresponds to that of colloidal particles, many metals deposit in the pores. When the oxide film is treated as anode in emulsion of polyelectrolyte, the emulsion particles migrate onto the film and deposit on it. We investigated the behavior of the emulsion particles during electrodeposition.Aluminum foils (99.3%) were anodized in either 0.25M oxalic acid solution at 30°C or 3M sulfuric acid solution at 20°C. After washing with distilled water, the oxide films used as anode were coated with emulsion particles by applying voltage of 200V and then they were cured at 190°C for 30 minutes.

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