Negative bias temperature instability mechanisms in p-channel power VDMOSFETs

N. Stojadinović; D. Danković; S. Djorić-Veljković; V. Davidović; I. Manić; S. Golubović

doi:10.1016/j.microrel.2005.07.018

Negative bias temperature instability mechanisms in p-channel power VDMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2005.07.018 ◽

2005 ◽

Vol 45 (9-11) ◽

pp. 1343-1348 ◽

Cited By ~ 33

Author(s):

N. Stojadinović ◽

D. Danković ◽

S. Djorić-Veljković ◽

V. Davidović ◽

I. Manić ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Channel Power ◽

Bias Temperature Instability

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Negative bias temperature instability in p-channel power VDMOSFETs: recoverable versus permanent degradation

Semiconductor Science and Technology ◽

10.1088/0268-1242/30/10/105009 ◽

2015 ◽

Vol 30 (10) ◽

pp. 105009 ◽

Cited By ~ 6

Author(s):

Danijel Danković ◽

Ivica Manić ◽

Aneta Prijić ◽

Snežana Djorić-Veljković ◽

Vojkan Davidović ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Channel Power ◽

Bias Temperature Instability

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Negative bias temperature instability in n-channel power VDMOSFETs

Microelectronics Reliability ◽

10.1016/j.microrel.2008.06.015 ◽

2008 ◽

Vol 48 (8-9) ◽

pp. 1313-1317 ◽

Cited By ~ 14

Author(s):

D. Danković ◽

I. Manić ◽

V. Davidović ◽

S. Djorić-Veljković ◽

S. Golubović ◽

...

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Channel Power ◽

Bias Temperature Instability

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New Multi-stages – Hydrogen Diffusion Model for Negative Bias Temperature Instability

Journal of Nano- and Electronic Physics ◽

10.21272/jnep.11(4).04018 ◽

2019 ◽

Vol 11 (4) ◽

pp. 04018-1-04018-6

Author(s):

M. Mallati ◽

◽

H. Bentarzi ◽

Keyword(s):

Diffusion Model ◽

Hydrogen Diffusion ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Defect Creation Stimulated by Thermally Activated Hole Trapping as the Driving Force Behind Negative Bias Temperature Instability in SiO2, SiON, and High-k Gate Stacks

2008 IEEE International Integrated Reliability Workshop Final Report ◽

10.1109/irws.2008.4796094 ◽

2008 ◽

Cited By ~ 7

Author(s):

Tibor Grasser ◽

Ben Kaczer ◽

Thomas Aichinger ◽

Wolfgang Goes ◽

Michael Nelhiebel

Keyword(s):

Driving Force ◽

Negative Bias ◽

Gate Stacks ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Thermally Activated ◽

Bias Temperature Instability ◽

Hole Trapping ◽

High K ◽

Defect Creation

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A novel Negative Bias Temperature Instability model for nanoscale Finfet

2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits ◽

10.1109/ipfa.2009.5232688 ◽

2009 ◽

Author(s):

Chenyue Ma ◽

Bo Li ◽

Frank He ◽

Xing Zhang ◽

Xinnan Lin

Keyword(s):

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability

2009 IEEE International Reliability Physics Symposium ◽

10.1109/irps.2009.5173396 ◽

2009 ◽

Cited By ~ 2

Author(s):

J.T. Ryan ◽

P.M. Lenahan ◽

A.T. Krishnan ◽

S. Krishnan ◽

J.P. Campbell

Keyword(s):

Scale Effects ◽

Atomic Scale ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Mechanism and process dependence of negative bias temperature instability (NBTI) for pMOSFETs with ultrathin gate dielectrics

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) ◽

10.1109/iedm.2001.979649 ◽

2002 ◽

Cited By ~ 22

Author(s):

C.H. Liu ◽

M.T. Lee ◽

Chih-Yung Lin ◽

J. Chen ◽

K. Schruefer ◽

...

Keyword(s):

Gate Dielectrics ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly $I_{\rm DLIN}$ Technique

IEEE Transactions on Electron Devices ◽

10.1109/ted.2008.923524 ◽

2008 ◽

Vol 55 (7) ◽

pp. 1630-1638 ◽

Cited By ~ 39

Author(s):

Vrajesh D. Maheta ◽

Christopher Olsen ◽

Khaled Ahmed ◽

Souvik Mahapatra

Keyword(s):

Gate Dielectric ◽

Silicon Oxynitride ◽

Negative Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability ◽

The Impact

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Impact of negative bias temperature instability on digital circuit reliability

2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320) ◽

10.1109/relphy.2002.996644 ◽

2003 ◽

Cited By ~ 102

Author(s):

V. Reddy ◽

A.T. Krishnan ◽

A. Marshall ◽

J. Rodriguez ◽

S. Natarajan ◽

...

Keyword(s):

Digital Circuit ◽

Negative Bias ◽

Circuit Reliability ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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Impact of substrate bias on p-MOSFET negative bias temperature instability

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493212 ◽

2005 ◽

Cited By ~ 2

Author(s):

P.B. Kurnars ◽

T.R. Dalei ◽

D. Varghese ◽

D. Saba ◽

S. Mahapatra ◽

...

Keyword(s):

Negative Bias ◽

Substrate Bias ◽

Negative Bias Temperature Instability ◽

Temperature Instability ◽

Bias Temperature Instability

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