Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

Ernest Y. Wu; Jordi Suñé

doi:10.1016/j.microrel.2005.04.004

Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

Microelectronics Reliability ◽

10.1016/j.microrel.2005.04.004 ◽

2005 ◽

Vol 45 (12) ◽

pp. 1809-1834 ◽

Cited By ~ 108

Author(s):

Ernest Y. Wu ◽

Jordi Suñé

Keyword(s):

Power Law ◽

Gate Oxide ◽

Oxide Reliability ◽

Thin Gate Oxide

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Ultra thin gate oxide reliability enhanced by carbon contamination free process

Applied Surface Science ◽

10.1016/s0169-4332(97)80086-4 ◽

1997 ◽

Vol 117-118 ◽

pp. 237-240 ◽

Cited By ~ 4

Author(s):

Toshiyuki Iwamoto ◽

Tadahiro Ohmi

Keyword(s):

Gate Oxide ◽

Carbon Contamination ◽

Oxide Reliability ◽

Free Process ◽

Thin Gate Oxide

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Thin Gate Oxide Reliability

International Test Conference 1999. Proceedings (IEEE Cat. No.99CH37034) ◽

10.1109/test.1999.805855 ◽

2005 ◽

Author(s):

J.L. Roehr

Keyword(s):

Gate Oxide ◽

Oxide Reliability ◽

Thin Gate Oxide

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Dependence of ultra-thin gate oxide reliability on surface cleaning approach

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) ◽

10.1109/icsict.1998.785877 ◽

2002 ◽

Cited By ~ 1

Author(s):

Gao Wenyu ◽

Liu Zhongli ◽

He Zhijing

Keyword(s):

Gate Oxide ◽

Surface Cleaning ◽

Oxide Reliability ◽

Thin Gate Oxide

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Universality of power-law voltage dependence for TDDB lifetime in thin gate oxide PMOSFETs

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. ◽

10.1109/relphy.2005.1493115 ◽

2005 ◽

Cited By ~ 8

Author(s):

K. Ohgata ◽

M. Ogasawara ◽

K. Shiga ◽

S. Tsujikawa ◽

E. Murakami ◽

...

Keyword(s):

Power Law ◽

Voltage Dependence ◽

Gate Oxide ◽

Thin Gate Oxide

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Thin Gate Oxide Reliability Study Using Nano-Scaled Stress

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450056 ◽

2007 ◽

Author(s):

Y. L. Wu ◽

C. Y. Hwang ◽

C. H. Liang ◽

S. T. Lin ◽

J. J. Liou

Keyword(s):

Gate Oxide ◽

Reliability Study ◽

Oxide Reliability ◽

Thin Gate Oxide

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Impact of Ti/TiN (Glue/Barrier Layer) Formation on Ultra-thin Gate Oxide Reliability (HCI and NBTI) for Deep Sub-micron CMOS Transistors

10.7567/ssdm.2003.p4-14 ◽

2003 ◽

Author(s):

Chuan H. Liu ◽

M.G. Chen ◽

Y. R. Yang ◽

Y. T. Loh

Keyword(s):

Barrier Layer ◽

Gate Oxide ◽

Layer Formation ◽

Cmos Transistors ◽

Oxide Reliability ◽

Thin Gate Oxide

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Effects of electron-beam lithography on thin gate oxide reliability

Proceedings of the 2001 8th International Symposium on the Physical and Failure Analysis of Integrated Circuits. IPFA 2001 (Cat. No.01TH8548) ◽

10.1109/ipfa.2001.941454 ◽

2002 ◽

Author(s):

Pei Fen Chong ◽

Byung Jin Cho ◽

Eng Fong Chor ◽

Moon Sig Joo

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Gate Oxide ◽

Oxide Reliability ◽

Thin Gate Oxide

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Impacts of plasma process-induced damage on ultra-thin gate oxide reliability

1997 IEEE International Reliability Physics Symposium Proceedings. 35th Annual ◽

10.1109/relphy.1997.584257 ◽

2002 ◽

Cited By ~ 7

Author(s):

K. Eriguchi ◽

T. Yamada ◽

Y. Kosaka ◽

M. Niwa

Keyword(s):

Gate Oxide ◽

Plasma Process ◽

Oxide Reliability ◽

Thin Gate Oxide

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Temperature acceleration of oxide breakdown and its impact on ultra-thin gate oxide reliability

1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325) ◽

10.1109/vlsit.1999.799339 ◽

2003 ◽

Cited By ~ 33

Author(s):

R. Degraeve ◽

N. Pangon ◽

B. Kaczer ◽

T. Nigam ◽

G. Groeseneken ◽

...

Keyword(s):

Gate Oxide ◽

Oxide Breakdown ◽

Oxide Reliability ◽

Thin Gate Oxide

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Effect of charge transport through silicon nitride on thin gate oxide reliability

Applied Physics Letters ◽

10.1063/1.1526456 ◽

2002 ◽

Vol 81 (23) ◽

pp. 4464-4466 ◽

Cited By ~ 10

Author(s):

A. Cacciato ◽

A. Scarpa ◽

S. Evseev ◽

M. Diekema

Keyword(s):

Silicon Nitride ◽

Charge Transport ◽

Gate Oxide ◽

Oxide Reliability ◽

Thin Gate Oxide

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