Multi-vibrational hydrogen release: Physical origin of Tbd,Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

2005 ◽  
Vol 45 (12) ◽  
pp. 1842-1854 ◽  
Author(s):  
G. Ribes ◽  
S. Bruyère ◽  
M. Denais ◽  
F. Monsieur ◽  
V. Huard ◽  
...  
Keyword(s):  
Power Law ◽  
Voltage Dependence ◽  
Hydrogen Release ◽  
Physical Origin ◽  
Gate Oxides ◽  
Oxide Breakdown

Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown

2002 ◽  
Vol 49 (12) ◽  
pp. 2244-2253 ◽  
Author(s):  
E.Y. Wu ◽  
A. Vayshenker ◽  
E. Nowak ◽  
J. Sune ◽  
R.-P. Vollertsen ◽  
...  
Keyword(s):  
Experimental Evidence ◽  
Power Law ◽  
Voltage Dependence ◽  
Oxide Breakdown

Product failures: Power-law or exponential voltage dependence?

2010 ◽  
Author(s):  
Amr Haggag ◽  
Keith Forbes ◽  
Gary Anderson ◽  
Dave Burnett ◽  
Peter Abramowitz ◽  
...  
Keyword(s):  
Power Law ◽  
Voltage Dependence

scholarly journals Conductance asymmetries in mesoscopic superconducting devices due to finite bias

2021 ◽  
Vol 10 (2) ◽  
Author(s):  
André Melo ◽  
Chun-Xiao Liu ◽  
Piotr Rożek ◽  
Tómas Örn Rosdahl ◽  
Michael Wimmer
Keyword(s):  
Bound States ◽  
Voltage Dependence ◽  
Superconducting Devices ◽  
Scattering Matrix ◽  
Tunnel Barrier ◽  
Tunneling Conductance ◽  
Physical Origin ◽  
Andreev Bound States ◽  
Superconducting Device ◽  
Symmetry Relations

Tunneling conductance spectroscopy in normal metal-superconductor junctions is an important tool for probing Andreev bound states in mesoscopic superconducting devices, such as Majorana nanowires. In an ideal superconducting device, the subgap conductance obeys specific symmetry relations, due to particle-hole symmetry and unitarity of the scattering matrix. However, experimental data often exhibits deviations from these symmetries or even their explicit breakdown. In this work, we identify a mechanism that leads to conductance asymmetries without quasiparticle poisoning. In particular, we investigate the effects of finite bias and include the voltage dependence in the tunnel barrier transparency, finding significant conductance asymmetries for realistic device parameters. It is important to identify the physical origin of conductance asymmetries: in contrast to other possible mechanisms such as quasiparticle poisoning, finite-bias effects are not detrimental to the performance of a topological qubit. To that end we identify features that can be used to experimentally determine whether finite-bias effects are the source of conductance asymmetries.

The Effect of Silicide Formation on the Electrical Properties of Gate Oxides

1992 ◽  
Vol 260 ◽  
Author(s):  
J. P. Gambino ◽  
B. Cunningham ◽  
D. A. Buchanan
Keyword(s):  
Gate Oxide ◽  
Interface State ◽  
State Density ◽  
Breakdown Field ◽  
Rapid Thermal Anneal ◽  
Gate Oxides ◽  
Mos Capacitors ◽  
Oxide Breakdown ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTCoSi2, or TiSi2 formation on gate polysilicon can degrade the current-voltage and capacitance-voltage characteristics of MOS capacitors. Degradation of the gate oxide breakdown field is much more severe for capacitors with TiSi2 than for those with COSi2 TEM reveals evidence for a reaction at the interface between TiSi2 and SiO2, whereas there is no observable reaction between COSi2 and SiO2- The low breakdown fields for devices with TiSi2 may be due to thinning of the gate oxide by the interfacial reaction or mechanical deformation. A high density of electron traps and a small reduction in the breakdown field is observed when COSi2 contacts the gate, possibly due to a compressive stress in the oxide exerted by the suicide. In addition, an increase in the interface state density at the Si-SiO2 interface is seen for all samples exposed to a rapid thermal anneal (RTA) at 800°C, possibly due to the release of H from dangling bonds.

scholarly journals Statistical analysis on X-ray flares from the nucleus and HST-1 knot in the M87 jet

2019 ◽  
Vol 489 (2) ◽  
pp. 2685-2693
Author(s):  
Shenbang Yang ◽  
Dahai Yan ◽  
Benzhong Dai ◽  
Pengfei Zhang ◽  
Qianqian Zhu ◽  
...  
Keyword(s):  
Magnetic Reconnection ◽  
Power Law ◽  
Physical Origin ◽  
Flare Event ◽  
X Ray ◽  
Self Organized ◽  
Peak Intensity ◽  
Similar Index ◽  
Self Organized Criticality ◽  
Power Law Distributions

ABSTRACT The statistical properties of X-ray flares from two separate locations (nucleus and HST-1) in the M87 jet are investigated to reveal the physical origin of the flares. We analyse the archival Chandra data for M87, and identify 14 flares in the nucleus and nine flares in HST-1. The peak intensity (IP) and the flaring duration time (Tfl) for each flare are obtained. It is found that the distributions of both IP and Tfl for the nucleus obey a power law form with a similar index. A similar result is also obtained for HST-1, and no significant inconsistency between the nucleus and HST-1 is found for the indices. Similar to solar X-ray flares, the power-law distributions of the flare event parameters can be well explained by a self-organized criticality system, which are triggered by magnetic reconnection. Our results suggest that the flares from nucleus and HST-1 are possibly triggered by magnetic reconnection process. The consistent indices for the distributions of IP and Tfl in the nucleus and HST-1 indicate that the dimensions of the energy dissipation of the magnetic reconnection are identical in the two regions. A strong correlation between the flares in the two regions also suggests a similar physical origin for the flares.

Femtosecond laser ablation of metal targets: The physical origin of the power law size distribution of nanoparticles

2021 ◽  
Vol 134 ◽  
pp. 106651
Author(s):  
Tingyuan Wang ◽  
Yuyan Song ◽  
Chuqian Liu ◽  
Xiaolei Wang ◽  
Lie Lin ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Femtosecond Laser ◽  
Size Distribution ◽  
Power Law ◽  
Femtosecond Laser Ablation ◽  
Physical Origin
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