Understanding the effects of NIR laser stimulation on NMOS transistor

2004 ◽  
Vol 44 (9-11) ◽  
pp. 1675-1680 ◽  
Keyword(s):  
Nmos Transistor ◽  
Laser Stimulation ◽  
Nir Laser

Building the Electrical Model of the Photoelectric Laser Stimulation of an NMOS Transistor in 90 nm Technology

2012 ◽  
Author(s):  
A. Sarafianos ◽  
R. Llido ◽  
O. Gagliano ◽  
V. Serradeil ◽  
M. Lisart ◽  
...  
Keyword(s):  
Physical Simulation ◽  
Spot Size ◽  
Electrical Model ◽  
Continuous Laser ◽  
Nmos Transistor ◽  
Carrier Generation ◽  
Laser Stimulation ◽  
Laser Wave ◽  
Spatial Parameters ◽  
Physical Insight

Abstract This paper presents the electrical model of an NMOS transistor in 90nm technology under 1064nm Photoelectric Laser Stimulation. The model was built and tuned from measurements made on test structures and from the results of physical simulation using Finite Element Modeling (TCAD). The latter is a useful tool in order to understand and correlate the effects seen by measurement by given a physical insight of carrier generation and transport in devices. This electrical model enables to simulate the effect of a continuous laser wave on an NMOS transistor by taking into account the laser’s parameters (i.e. spot size and power), spatial parameters (i.e. the spot location and the NMOS’ geometry) and the NMOS’ bias. It offers a significant gain of time for experiment processes and makes it possible to build 3D photocurrent cartographies generated by the laser on the NMOS, in order to predict its response independently of the laser beam location.

NIR laser stimulation for dynamic timing analysis

2005 ◽  
Vol 45 (9-11) ◽  
pp. 1459-1464 ◽  
Author(s):  
K. Sanchez ◽  
R. Desplats ◽  
F. Beaudoin ◽  
P. Perdu ◽  
J.P. Roux ◽  
...  
Keyword(s):  
Timing Analysis ◽  
Laser Stimulation ◽  
Nir Laser

Double NIR laser stimulation and enhancing the thermal sensitivity of Er3+/Tm3+/Nd3+ doped multilayer core–shell nanoparticles

2018 ◽  
Vol 29 (35) ◽  
pp. 355704 ◽  
Author(s):  
Zhaojing Ba ◽  
Min Hu ◽  
Yiming Zhao ◽  
Yiqing Wang ◽  
Jing Wang ◽  
...  
Keyword(s):  
Thermal Sensitivity ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Laser Stimulation ◽  
Core Shell Nanoparticles ◽  
Nir Laser

Efficacy of the combined treatment by the method of phosphenelectrostimulation and laser stimulation in patients with myopia of the weak degree

2011 ◽  
Vol 30 (2) ◽  
pp. 27-31
Author(s):  
V. Ponomarchuk ◽  
◽  
N. Khramenko ◽  
O. Guzun ◽  
Barudi Abdul Moneim ◽  
...  
Keyword(s):  
Combined Treatment ◽  
Laser Stimulation

Case Study: Combined Dynamic Laser Stimulation and Static Emission Microscopy Techniques Applied to Scan Test Failure on Mixed Mode Device

2012 ◽  
Author(s):  
Magdalena Sienkiewicz ◽  
Philippe Rousseille
Keyword(s):  
Mixed Mode ◽  
Laser Stimulation ◽  
Scan Test ◽  
Silicon Bulk ◽  
Defect Localization ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Test Failure

Abstract This paper presents a case study on scan test reject in a mixed mode IC. It focuses on the smart use of combined mature FA techniques, such as Soft Defect Localization (SDL) and emission microscopy (EMMI), to localize a random scan test anomaly at the silicon bulk level.

WLCSP Laminate Removal Using NIR Laser

2018 ◽  
Author(s):  
Chun Haur Khoo
Keyword(s):  
Near Infrared ◽  
Laser Energy ◽  
Photon Emission ◽  
Mechanical Damage ◽  
Consumer Products ◽  
Fault Isolation ◽  
Wafer Level ◽  
Isolation Technique ◽  
Laminate Layer ◽  
Nir Laser

Abstract Driven by the cost reduction and miniaturization, Wafer Level Chip Scale Packaging (WLCSP) has experienced significant growth mainly driven by mobile consumer products. Depending on the customers or manufacturing needs, the bare silicon backside of the WLCSP may be covered with a backside laminate layer. In the failure analysis lab, in order to perform the die level backside fault isolation technique using Photon Emission Microscope (PEM) or Laser Signal Injection Microscope (LSIM), the backside laminate layer needs to be removed. Most of the time, this is done using the mechanical polishing method. This paper outlines the backside laminate removal method of WLCSP using a near infrared (NIR) laser that produces laser energy in the 1,064 nm range. This method significantly reduces the sample preparation time and also reduces the risk of mechanical damage as there is no application of mechanical force. This is an effective method for WLCSP mounted on a PCB board.

Thermal Laser Stimulation Technique for AlGaN/GaN HEMT Technologies Improvement

2013 ◽  
Author(s):  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Nathalie Labat ◽  
Nathalie Malbert ◽  
Arnaud Curutchet ◽  
...  
Keyword(s):  
Surface States ◽  
Leakage Currents ◽  
Laser Stimulation ◽  
Long Term Stability ◽  
Field Plate ◽  
Gan Hemt ◽  
Die Surface ◽  
Scan Speed ◽  
Stimulation Technique

Abstract To improve the long-term stability of AlGaN/GaN HEMTs, the reduction of gate and drain leakage currents and electrical anomalies at pinch-off is required. As electron transport in these devices is both coupled with traps or surface states interactions and with polarization effects, the identification and localization of the preeminent leakage path is still challenging. This paper demonstrates that thermal laser stimulation (TLS) analysis (OBIRCh, TIVA, XIVA) performed on the die surface are efficient to localize leakage paths in GaN based HEMTs. The first part details specific parameters, such as laser scan speed, scan direction, wavelength, and laser power applied for leakage gate current paths identification. It compares results obtained with Visible_NIR electroluminescence analysis with the ones obtained by the TLS techniques on GaN HEMT structures. The second part describes some failure analysis case studies of AlGaN/GaN HEMT with field plate structure which were successful, thanks to the OBIRCh technique.

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