2005 IEEE International Integrated Reliability Workshop
Latest Publications

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(FIVE YEARS 0)

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(FIVE YEARS 0)

Published By IEEE

0780389921

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Impact of Device Scaling on Deep Sub-Micron Transistor Reliability - A Study of Reliability Trends Using SRAM

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609574 ◽

2006 ◽

Author(s):

M. White ◽

Bing Huang ◽

Jin Qin ◽

Z. Gur ◽

M. Talmor ◽

...

Keyword(s):

Device Scaling ◽

Transistor Reliability

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Single-Hole Detrapping Events in PMOSFETS NBTI Degradation

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609552 ◽

2006 ◽

Cited By ~ 12

Author(s):

V. Huard ◽

C.R. Parthasarathy ◽

M. Denais

Keyword(s):

Single Hole

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Testing Methodology for Lifetime Extrapolation of PZT Capacitors

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609571 ◽

2006 ◽

Author(s):

E. Bouyssou ◽

S. Bruyere ◽

G. Guegan ◽

C. Anceau ◽

R. Jerisian

Keyword(s):

Testing Methodology

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Impact of moisture on porous low-k reliability

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609558 ◽

2006 ◽

Author(s):

J. Michelon ◽

R.J.O.M. Hoofman

Keyword(s):

Low K

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Characterization and Modeling NBTI for Design-in Reliability

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609593 ◽

2006 ◽

Cited By ~ 6

Author(s):

C.R. Parthasarathy ◽

M. Denais ◽

G. Ribes ◽

E. Vincent ◽

V. Huard ◽

...

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Reliability Engineering Tools: Bootstrapping and Extreme Value Statistics

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609588 ◽

2006 ◽

Cited By ~ 2

Author(s):

L. Stout

Keyword(s):

Extreme Value ◽

Extreme Value Statistics ◽

Reliability Engineering

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IIRW 2005 Discussion Group Summary: Gate Oxide / High-k Reliability

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609596 ◽

2006 ◽

Author(s):

G. Ribes ◽

J. Suehle

Keyword(s):

Gate Oxide ◽

Discussion Group ◽

High K

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A new degradation mode for advanced Heterojunction Bipolar Transistors under Reverse Bias stress

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609563 ◽

2006 ◽

Cited By ~ 1

Author(s):

M. Ruat ◽

R. Angers ◽

G. Ghibaudo ◽

G. Pananakakis ◽

N. Revil

Keyword(s):

Heterojunction Bipolar Transistors ◽

Reverse Bias ◽

Bipolar Transistors ◽

Bias Stress

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On intrinsic failure rate of products with error correction

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609566 ◽

2006 ◽

Cited By ~ 1

Author(s):

Guoqiao Tao ◽

J. Bisschop ◽

Som Nath

Keyword(s):

Error Correction ◽

Failure Rate

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Product Reliability in 90nm CMOS and Beyond

2005 IEEE International Integrated Reliability Workshop ◽

10.1109/irws.2005.1609594 ◽

2006 ◽

Author(s):

A.A. Turner

Keyword(s):

Product Reliability

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2005 IEEE International Integrated Reliability WorkshopLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Impact of Device Scaling on Deep Sub-Micron Transistor Reliability - A Study of Reliability Trends Using SRAM

Single-Hole Detrapping Events in PMOSFETS NBTI Degradation

Testing Methodology for Lifetime Extrapolation of PZT Capacitors

Impact of moisture on porous low-k reliability

Characterization and Modeling NBTI for Design-in Reliability

Reliability Engineering Tools: Bootstrapping and Extreme Value Statistics

IIRW 2005 Discussion Group Summary: Gate Oxide / High-k Reliability

A new degradation mode for advanced Heterojunction Bipolar Transistors under Reverse Bias stress

On intrinsic failure rate of products with error correction

Product Reliability in 90nm CMOS and Beyond

2005 IEEE International Integrated Reliability Workshop
Latest Publications