Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

T. Matsumoto;  Asuha; W.-B. Kim; M. Yamada; S. Imai; S. Terakawa; H. Kobayashi

doi:10.1016/j.mee.2009.03.080

Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

Microelectronic Engineering ◽

10.1016/j.mee.2009.03.080 ◽

2009 ◽

Vol 86 (7-9) ◽

pp. 1939-1941 ◽

Cited By ~ 6

Author(s):

T. Matsumoto ◽

Asuha ◽

W.-B. Kim ◽

M. Yamada ◽

S. Imai ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Nitric Acid ◽

Low Temperature ◽

Thin Film Transistor ◽

Acid Oxidation ◽

Nitric Acid Oxidation

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Low Temperature Formation of SiO2 Thin Films by Nitric Acid Oxidation of Si and Electrical Characterization of the Film

Hyomen Kagaku ◽

10.1380/jsssj.29.498 ◽

2008 ◽

Vol 29 (8) ◽

pp. 498-502 ◽

Cited By ~ 1

Author(s):

Taketoshi MATSUMOTO ◽

Kentaro IMAMURA ◽

Hikaru KOBAYASHI

Keyword(s):

Thin Films ◽

Nitric Acid ◽

Low Temperature ◽

Electrical Characterization ◽

Acid Oxidation ◽

Nitric Acid Oxidation

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Low temperature fabrication of 5–10nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method

Applied Surface Science ◽

10.1016/j.apsusc.2010.03.032 ◽

2010 ◽

Vol 256 (18) ◽

pp. 5610-5613 ◽

Cited By ~ 5

Author(s):

Yousuke Fukaya ◽

Takashi Yanase ◽

Yasushi Kubota ◽

Shigeki Imai ◽

Taketoshi Matsumoto ◽

...

Keyword(s):

Nitric Acid ◽

Low Temperature ◽

Acid Oxidation ◽

Nitric Acid Oxidation

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Low temperature (<400°C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation

Applied Physics Letters ◽

10.1063/1.2711290 ◽

2007 ◽

Vol 90 (10) ◽

pp. 102902 ◽

Cited By ~ 10

Author(s):

Jung-Chin Chiang ◽

Jenn-Gwo Hwu

Keyword(s):

Nitric Acid ◽

Low Temperature ◽

Gate Dielectrics ◽

Acid Oxidation ◽

Nitric Acid Oxidation ◽

Shadow Evaporation

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Reliability of Low-Temperature-Processing Hafnium Oxide Gate Dielectrics Prepared by Cost-Effective Nitric Acid Oxidation Technique

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2007.910129 ◽

2007 ◽

Vol 7 (4) ◽

pp. 611-616 ◽

Cited By ~ 7

Author(s):

Chia-Hua Chang ◽

Jenn-Gwo Hwu

Keyword(s):

Nitric Acid ◽

Low Temperature ◽

Hafnium Oxide ◽

Gate Dielectrics ◽

Cost Effective ◽

Acid Oxidation ◽

Low Temperature Processing ◽

Nitric Acid Oxidation

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Stack engineering of low-temperature-processing Al2O3 dielectrics prepared by nitric acid oxidation for MOS structure

Microelectronic Engineering ◽

10.1016/j.mee.2009.09.013 ◽

2010 ◽

Vol 87 (4) ◽

pp. 686-689 ◽

Cited By ~ 2

Author(s):

Ching-Hang Chen ◽

Jenn-Gwo Hwu

Keyword(s):

Nitric Acid ◽

Low Temperature ◽

Acid Oxidation ◽

Mos Structure ◽

Low Temperature Processing ◽

Nitric Acid Oxidation

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Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

Applied Physics Express ◽

10.7567/apex.10.095502 ◽

2017 ◽

Vol 10 (9) ◽

pp. 095502 ◽

Cited By ~ 4

Author(s):

Tatsuya Suzuki ◽

Benedict Mutunga Joseph ◽

Misato Fukai ◽

Masao Kamiko ◽

Kentaro Kyuno

Keyword(s):

Thin Film ◽

Thin Films ◽

Low Temperature ◽

Thin Film Transistor ◽

Dopant Activation ◽

Exchange Operation

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Low Temperature Ultra-thin Hafnium Oxide Dielectrics by Sputtering of Hf Metal on Tilted Substrate Followed by Nitric Acid Oxidation then Anodization Compensation in D. I. Water

10.7567/ssdm.2007.f-5-4 ◽

2007 ◽

Author(s):

Chia-Hua Chang ◽

Jenn-Gwo Hwu

Keyword(s):

Nitric Acid ◽

Low Temperature ◽

Hafnium Oxide ◽

Acid Oxidation ◽

Nitric Acid Oxidation

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Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

Applied Surface Science ◽

10.1016/j.apsusc.2010.03.092 ◽

2010 ◽

Vol 256 (19) ◽

pp. 5744-5756 ◽

Cited By ~ 31

Author(s):

H. Kobayashi ◽

K. Imamura ◽

W.-B. Kim ◽

S.-S. Im ◽

Asuha

Keyword(s):

Nitric Acid ◽

Low Temperature ◽

Acid Oxidation ◽

Nitric Acid Oxidation

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Optimization of excimer laser annealing on low temperature polysilicon for thin film transistor applications

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306181 ◽

2006 ◽

Cited By ~ 1

Author(s):

T.C. Cheng ◽

W.C. Chang ◽

K.F. Yarn ◽

C.F. Lo ◽

J.K. Kuo

Keyword(s):

Thin Film ◽

Low Temperature ◽

Excimer Laser ◽

Laser Annealing ◽

Thin Film Transistor ◽

Excimer Laser Annealing

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Benzophenone via nitric acid oxidation of 1,1-diphenylethane

Industrial & Engineering Chemistry Product Research and Development ◽

10.1021/i300015a031 ◽

1984 ◽

Vol 23 (3) ◽

pp. 479-482 ◽

Cited By ~ 1

Author(s):

Johann G. D. Schulz ◽

Anatoli Onopchenko

Keyword(s):

Nitric Acid ◽

Acid Oxidation ◽

Nitric Acid Oxidation

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