Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor

2017 ◽  
Vol 10 (9) ◽  
pp. 095502 ◽  
Author(s):  
Tatsuya Suzuki ◽  
Benedict Mutunga Joseph ◽  
Misato Fukai ◽  
Masao Kamiko ◽  
Kentaro Kyuno
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Dopant Activation ◽  
Exchange Operation

Nanoscale p-MOS Thin-Film Transistor With TiN Gate Electrode Fabricated by Low-Temperature Microwave Dopant Activation

2010 ◽  
Vol 31 (5) ◽  
pp. 437-439 ◽  
Author(s):  
Yu-Lun Lu ◽  
Fu-Kuo Hsueh ◽  
Kuo-Ching Huang ◽  
Tz-Yen Cheng ◽  
Jeff M Kowalski ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Gate Electrode ◽  
Dopant Activation

Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1939-1941 ◽  
Author(s):  
T. Matsumoto ◽  
Asuha ◽  
W.-B. Kim ◽  
M. Yamada ◽  
S. Imai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nitric Acid ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

scholarly journals A Novel Four-Mask-Step Low-Temperature Polysilicon Thin-Film Transistor With Self-Aligned Raised Source/Drain (SARSD)

2007 ◽  
Vol 28 (1) ◽  
pp. 39-41 ◽  
Author(s):  
Kow Ming Chang ◽  
Gin Min Lin ◽  
Cheng Guo Chen ◽  
Mon Fan Hsieh
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor

Thermodynamic Analysis of Physical Vapor Deposition (PVD) Inorganic Thin Films on Low Temperature Cofired Ceramic (LTCC)

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000175-000182
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Abstract Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high reliability, high density microelectronics. The functionality and robustness of rework has been increased through the incorporation of a Physical Vapor Deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for RF (Radio Frequency) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. While past work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e. thermodynamic) parameters in literature. This paper analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxides coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability over a range of temperatures. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

Thermodynamic Analysis of Physical Vapor Deposited Inorganic Thin Films on Low Temperature Cofired Ceramic

2016 ◽  
Vol 13 (3) ◽  
pp. 95-101 ◽  
Author(s):  
Carol Putman ◽  
Rachel Cramm Horn ◽  
J. Ambrose Wolf ◽  
Daniel Krueger
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Physical Vapor Deposition ◽  
High Reliability ◽  
Interface Energy ◽  
Film Adhesion ◽  
Molecular Stability ◽  
Thin Film Adhesion ◽  
Inorganic Thin Films

Low temperature cofired ceramic (LTCC) has been established as an excellent packaging technology for high-reliability, high-density microelectronics. The functionality and robustness of rework have been increased through the incorporation of a physical vapor deposition (PVD) thin film Ti/Cu/Pt/Au metallization. PVD metallization is suitable for radio frequency (RF) applications as well as digital systems. Adhesion of the Ti “adhesion layer” to the LTCC as-fired surface is not well understood. Although previous work has established extrinsic parameters for delamination mechanisms of thin films on LTCC substrates, there is incomplete information regarding the intrinsic (i.e., thermodynamic) parameters in the literature. This article analyzes the thermodynamic favorability of adhesion between Ti, Cr, and their oxide coatings on LTCC (assumed as amorphous silica glass and Al2O3). Computational molecular calculations are used to determine interface energy as an indication of molecular stability between pair of materials at specific temperature. The end result will expand the understanding of thin film adhesion to LTCC surfaces and assist in increasing the long-term reliability of the interface bonding on RF microelectronic layers.

Thin Film Morphology and GrowthMechanism of Pentacene Thin Film Using Low-Pressure Organic Vapor Deposition

2003 ◽  
Vol 769 ◽  
Author(s):  
Seong Deok Ahn ◽  
Seung Youl Kang ◽  
Yong Eui Lee ◽  
Meyoung Ju Joung ◽  
Chul Am Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Thin Film Transistor ◽  
Low Pressure ◽  
Chamber Pressure ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Organic Vapor

AbstractWe have investigated the growth mechanism and thin film morphology of pentacene thin films by the process of low-pressure gas assisted organic vapor deposition (LP-GAOVD). As the source temperature, flow rate of the carrier gas, substrate temperature and chamber pressure were varied, the growth rate, morphology and grain size of the films were differently obtained. The electrical properties of pentacene thin films for applications in organic thin film transistor and electrophoretic displays were discussed

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