Low temperature (<400°C) Al2O3 ultrathin gate dielectrics prepared by shadow evaporation of aluminum followed by nitric acid oxidation

2007 ◽  
Vol 90 (10) ◽  
pp. 102902 ◽  
Author(s):  
Jung-Chin Chiang ◽  
Jenn-Gwo Hwu
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Gate Dielectrics ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation ◽  
Shadow Evaporation

Low temperature fabrication of 5–10nm SiO2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method

2010 ◽  
Vol 256 (18) ◽  
pp. 5610-5613 ◽  
Author(s):  
Yousuke Fukaya ◽  
Takashi Yanase ◽  
Yasushi Kubota ◽  
Shigeki Imai ◽  
Taketoshi Matsumoto ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Low temperature formation of SiO2 thin films by nitric acid oxidation of Si (NAOS) and application to thin film transistor (TFT)

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1939-1941 ◽  
Author(s):  
T. Matsumoto ◽  
Asuha ◽  
W.-B. Kim ◽  
M. Yamada ◽  
S. Imai ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Nitric Acid ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

2010 ◽  
Vol 256 (19) ◽  
pp. 5744-5756 ◽  
Author(s):  
H. Kobayashi ◽  
K. Imamura ◽  
W.-B. Kim ◽  
S.-S. Im ◽  
Asuha
Keyword(s):  
Nitric Acid ◽  
Low Temperature ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation

Nitric Acid Oxidation of Si for the Tunneling Oxide Application on CoSi[sub 2] Nanocrystals Nonvolatile Memory

2010 ◽  
Vol 157 (3) ◽  
pp. H332
Author(s):  
Chih-Wei Hu ◽  
Ting-Chang Chang ◽  
Chun-Hao Tu ◽  
Yang-Dong Chen ◽  
Chao-Cheng Lin ◽  
...  
Keyword(s):  
Nitric Acid ◽  
Nonvolatile Memory ◽  
Acid Oxidation ◽  
Nitric Acid Oxidation
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