Dynamical modeling of transport in MOS structures containing silicon nanocrystals for memory applications

2008 ◽  
Vol 85 (12) ◽  
pp. 2378-2381 ◽  
Author(s):  
Josep Carreras ◽  
O. Jambois ◽  
M. Perálvarez ◽  
Y. Lebour ◽  
B. Garrido
Keyword(s):  
Silicon Nanocrystals ◽  
Dynamical Modeling ◽  
Memory Applications ◽  
Mos Structures

Electroluminescence of silicon nanocrystals in MOS structures

2002 ◽  
Vol 74 (1) ◽  
pp. 1-5 ◽  
Author(s):  
G. Franzò ◽  
A. Irrera ◽  
E.C. Moreira ◽  
M. Miritello ◽  
F. Iacona ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Mos Structures

Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

2011 ◽  
Vol 495 ◽  
pp. 120-123 ◽  
Author(s):  
Nicola Nedev ◽  
Emil Manolov ◽  
Diana Nesheva ◽  
Kiril Krezhov ◽  
Roumen Nedev ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Linear Variation ◽  
Γ Irradiation ◽  
Semiconductor Structures ◽  
Flatband Voltage ◽  
Mos Structures ◽  
Higher Doses

MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

Electrical Characterization of MOS Structures with Silicon Nanocrystals Suitable for X-Ray Detection

2013 ◽  
Vol 543 ◽  
pp. 150-153
Author(s):  
David Mateos ◽  
Nicola Nedev ◽  
Diana Nesheva ◽  
Mario Curiel ◽  
Emil Manolov ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Gate Dielectric ◽  
Defect Density ◽  
Electrical Characterization ◽  
Oxide Semiconductor ◽  
Electrical Measurements ◽  
Transmission Electron ◽  
Interface Defect ◽  
Mos Structures

Metal-Oxide-Semiconductor structures with silicon nanocrystals in the oxide layer are prepared and characterized by Transmission Electron Microscopy and electrical measurements. High temperature annealing of SiO1.15 films at 1000 °C for 30 or 60 min leads to formation of silicon nanocrystals with diameters of 2-3 or 4-6 nm. The processes used to obtain the multilayer gate dielectric and to grow nanocrystals do not deteriorate the properties of the cSi wafer/thermal SiO2 interface. For the interface defect density and the fixed oxide charge values 1010 cm-2 eV-1 and ~ 1010 cm-2 were obtained.

Investigation of ferroelectrics using conventional and in situ electron microscopy

1994 ◽  
Vol 52 ◽  
pp. 586-587
Author(s):  
V. Saikumar ◽  
H. M. Chan ◽  
M. P. Harmer
Keyword(s):  
Nonvolatile Memory ◽  
Ferroelectric Materials ◽  
Gate Insulator ◽  
Sensors And Actuators ◽  
In Situ Electron Microscopy ◽  
Ferroelectric Domains ◽  
Domain Boundaries ◽  
Domain Interactions ◽  
Memory Applications

In recent years, there has been a growing interest in the application of ferroelectric thin films for nonvolatile memory applications and as a gate insulator in DRAM structures. In addition, bulk ferroelectric materials are also widely used as components in electronic circuits and find numerous applications in sensors and actuators. To a large extent, the performance of ferroelectric materials are governed by the ferroelectric domains (with dimensions in the micron to sub-micron range) and the switching of domains in the presence of an applied field. Conventional TEM studies of ferroelectric domains structures, in conjunction with in-situ studies of the domain interactions can aid in explaining the behavior of ferroelectric materials, while providing some answers to the mechanisms and processes that influence the performance of ferroelectric materials. A few examples from bulk and thin film ferroelectric materials studied using the TEM are discussed below.Figure 1 shows micrographs of ferroelectric domains obtained from undoped and Fe-doped BaTiO3 single crystals. The domain boundaries have been identified as 90° domains with the boundaries parallel to <011>.

Photoluminescence behavior of silicon nanocrystals: Role of surface chemistry and size

2008 ◽  
Author(s):  
Anoop Gupta ◽  
Folarin Erogbogbo ◽  
Mark T. Swihart ◽  
Hartmut Wiggers
Keyword(s):  
Surface Chemistry ◽  
Silicon Nanocrystals ◽  
Photoluminescence Behavior

Pump-Probe Measurements Using Silicon Nanocrystal Waveguides

2003 ◽  
Vol 770 ◽  
Author(s):  
Nathanael Smith ◽  
Max J. Lederer ◽  
Marek Samoc ◽  
Barry Luther-Davies ◽  
Robert G. Elliman
Keyword(s):  
Probe Beam ◽  
Time Resolution ◽  
Pump Beam ◽  
Silicon Nanocrystals ◽  
Continuous Wave ◽  
Optical Gain ◽  
Optical Pump ◽  
Time Resolved ◽  
Pump Probe ◽  
Probe Measurements

AbstractOptical pump-probe measurements were performed on planar slab waveguides containing silicon nanocrystals in an attempt to measure optical gain from photo-excited silicon nanocrystals. Two experiments were performed, one with a continuous-wave probe beam and a pulsed pump beam, giving a time resolution of approximately 25 ns, and the other with a pulsed pump and probe beam, giving a time resolution of approximately 10 ps. In both cases the intensity of the probe beam was found to be attenuated by the pump beam, with the attenuation increasing monotonically with increasing pump power. Time-resolved measurements using the first experimental arrangement showed that the probe signal recovered its initial intensity on a time scale of 45-70 μs, a value comparable to the exciton lifetime in Si nanocrystals. These data are shown to be consistent with an induced absorption process such as confined carrier absorption. No evidence for optical gain was observed.

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