Interface Trap State Characterization of Metal-Insulator-Semiconductor Structures Based on Photosensitive Organic Materials

E. Bezzeccheri; A. Femia; R. Liguori; A. Rubino

doi:10.1016/j.matpr.2017.04.112

Interface Trap State Characterization of Metal-Insulator-Semiconductor Structures Based on Photosensitive Organic Materials

Materials Today Proceedings ◽

10.1016/j.matpr.2017.04.112 ◽

2017 ◽

Vol 4 (4) ◽

pp. 5045-5052 ◽

Cited By ~ 1

Author(s):

E. Bezzeccheri ◽

A. Femia ◽

R. Liguori ◽

A. Rubino

Keyword(s):

Organic Materials ◽

Interface Trap ◽

Trap State ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Characterization of interface electrical properties in SiO2/InSb metal/insulator/semiconductor structures prepared by plasma-enhanced chemical vapour deposition

Thin Solid Films ◽

10.1016/0040-6090(87)90317-8 ◽

1987 ◽

Vol 148 (3) ◽

pp. 243-250 ◽

Cited By ~ 9

Author(s):

K.G. Germanova ◽

E.P. Valcheva

Keyword(s):

Electrical Properties ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Fabrication and characterization of metal/insulator/semiconductor structures based on TiO2 and TiO2/SiO2 thin films prepared by low-temperature arc vapor deposition

Electronic Materials Letters ◽

10.1007/s13391-013-3244-6 ◽

2014 ◽

Vol 10 (3) ◽

pp. 579-584 ◽

Cited By ~ 4

Author(s):

Kumar Shubham ◽

P. Chakrabarti

Keyword(s):

Thin Films ◽

Low Temperature ◽

Vapor Deposition ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Fabrication And Characterization

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Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level spectroscopies

Journal of Applied Physics ◽

10.1063/1.4808093 ◽

2013 ◽

Vol 113 (20) ◽

pp. 204505 ◽

Cited By ~ 32

Author(s):

Christine M. Jackson ◽

Aaron R. Arehart ◽

Emre Cinkilic ◽

Brian McSkimming ◽

James S. Speck ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Deep Level ◽

Atomic Layer ◽

Interface Trap ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Layer Deposition

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Characterization of metal–ferroelectric–metal–insulator–semiconductor structures using ferroelectric Al-doped HfO2 thin films prepared by atomic-layer deposition with different O3 doses

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab2c62 ◽

2019 ◽

Vol 58 (7) ◽

pp. 070907 ◽

Cited By ~ 3

Author(s):

So-Yeong Na ◽

So-Jung Yoon ◽

Seung-Youl Kang ◽

Seung-Eon Moon ◽

Sung-Min Yoon

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Layer Deposition

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Measurement and characterization of interface state tunneling in metal-insulator-semiconductor structures

Solid-State Electronics ◽

10.1016/0038-1101(86)90140-1 ◽

1986 ◽

Vol 29 (6) ◽

pp. 597-606 ◽

Cited By ~ 8

Author(s):

Sanjay Jain ◽

Walter E. Dahlke

Keyword(s):

Interface State ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Characterization of a-Si:H based metal/insulator/semiconductor structures by feedback charge capacitance-voltage measurements and charge deep-level transient spectroscopy

Journal of Applied Physics ◽

10.1063/1.366247 ◽

1997 ◽

Vol 82 (9) ◽

pp. 4372-4377 ◽

Cited By ~ 7

Author(s):

I. Thurzo ◽

S. Teramura ◽

R. Durny ◽

V. Nádaždy ◽

M. Kumeda ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

Capacitance Voltage ◽

Transient Spectroscopy ◽

Charge Capacitance

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Electrical characterization of high-k based metal-insulator-semiconductor structures with negative resistance effect when using Al2O3 and nanolaminated films deposited on p-Si

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.3521383 ◽

2011 ◽

Vol 29 (1) ◽

pp. 01A901 ◽

Cited By ~ 10

Author(s):

A. Gómez ◽

H. Castán ◽

H. García ◽

S. Dueñas ◽

L. Bailón ◽

...

Keyword(s):

Electrical Characterization ◽

Negative Resistance ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures ◽

High K

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Electrical characterization of Au/n-GaN metal–semiconductor and Au/SiO2/n-GaN metal–insulator–semiconductor structures

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2011.05.055 ◽

2011 ◽

Vol 509 (31) ◽

pp. 8001-8007 ◽

Cited By ~ 63

Author(s):

V. Rajagopal Reddy ◽

M. Siva Pratap Reddy ◽

B. Prasanna Lakshmi ◽

A. Ashok Kumar

Keyword(s):

Electrical Characterization ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Novel Techniques for the Fabricating and Characterization of GaAs MIS (Metal Insulator Semiconductor) Structures.

10.21236/ada145766 ◽

1984 ◽

Author(s):

R. S. Ehle ◽

W. G. Morris ◽

B. J. Baliga

Keyword(s):

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Semiconductor Structures

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Trap state characterization of Al2O3/AlInGaN/GaN metal-insulator-semiconductor heterostructures

Semiconductor Science and Technology ◽

10.1088/1361-6641/ab1105 ◽

2019 ◽

Vol 34 (5) ◽

pp. 055014 ◽

Cited By ~ 2

Author(s):

Debaleen Biswas ◽

Naoki Torii ◽

Hirotaka Fujita ◽

Takahiro Yoshida ◽

Toshiharu Kubo ◽

...

Keyword(s):

Semiconductor Heterostructures ◽

Trap State ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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