Growth of single-crystalline AlZnO nanorods by simple vapor deposition method

2007 ◽  
Vol 61 (17) ◽  
pp. 3582-3584 ◽  
Author(s):  
Rui Deng ◽  
Youming Zou ◽  
Zheng Chen ◽  
Guoshun Jiang ◽  
Honggao Tang
CrystEngComm ◽  
2021 ◽  
Author(s):  
Wei-Jie Huang ◽  
Shu-Meng Yang ◽  
Tzu-Ting Liao ◽  
Kuo-Chang Lu

Single-crystalline iron silicide nanowires were synthesized via an original approach, pre-deposition method (PDM), with significantly improved morphologies and physical characteristics as compared with those fabricated by conventional chemical vapor deposition....


2005 ◽  
Vol 17 (10) ◽  
pp. 2752-2756 ◽  
Author(s):  
Jong Seok Jeong ◽  
Jeong Yong Lee ◽  
Jung Hee Cho ◽  
Han Jong Suh ◽  
Cheol Jin Lee

2016 ◽  
Vol 4 (10) ◽  
pp. 3673-3677 ◽  
Author(s):  
Yujie Han ◽  
Xin Yue ◽  
Yanshuo Jin ◽  
Xiangdong Huang ◽  
Pei Kang Shen

Single-crystalline titanium nitride nanowires have been directly synthesized by a novel chemical vapor deposition method and used as efficient catalysts for hydrogen evolution reaction for the first time.


2015 ◽  
Vol 3 (1) ◽  
pp. 100-106 ◽  
Author(s):  
Si-in Kim ◽  
Hana Yoon ◽  
Hyoban Lee ◽  
Sunghun Lee ◽  
Younghun Jo ◽  
...  

Ferromagnetic single-crystalline Co nanowires (NWs) aligned in a vertical orientation are epitaxially grown on m-cut sapphire substrates by a rapid and versatile chemical vapor deposition method. They were transformed into Co3O4 nanotubes by thermal annealing under dilute O2 conditions.


RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17800-17805 ◽  
Author(s):  
Wei Xu ◽  
Wei Wang ◽  
Zhiyong Guo ◽  
Zhaoping Liu

Submillimeter-sized single-crystalline graphene arrays have been successfully prepared by a commercial printing-assisted chemical vapor deposition method.


CrystEngComm ◽  
2015 ◽  
Vol 17 (9) ◽  
pp. 1911-1916 ◽  
Author(s):  
Jen-Yi Lin ◽  
Hsiu-Ming Hsu ◽  
Kuo-Chang Lu

Single-crystalline NiSi2, Ni2Si and Ni31Si12 nanowires with outstanding characteristics were synthesized through a nickel transport chemical vapor deposition method.


2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.


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