Epitaxy-driven vertical growth of single-crystalline cobalt nanowire arrays by chemical vapor deposition

2015 ◽  
Vol 3 (1) ◽  
pp. 100-106 ◽  
Author(s):  
Si-in Kim ◽  
Hana Yoon ◽  
Hyoban Lee ◽  
Sunghun Lee ◽  
Younghun Jo ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nanowire Arrays ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Vertical Orientation ◽  
Single Crystalline ◽  
Sapphire Substrates ◽  
Co Nanowires

Ferromagnetic single-crystalline Co nanowires (NWs) aligned in a vertical orientation are epitaxially grown on m-cut sapphire substrates by a rapid and versatile chemical vapor deposition method. They were transformed into Co3O4 nanotubes by thermal annealing under dilute O2 conditions.

scholarly journals Fabrication of submillimeter-sized single-crystalline graphene arrays by a commercial printing-assisted CVD method

RSC Advances ◽  
2017 ◽  
Vol 7 (29) ◽  
pp. 17800-17805 ◽  
Author(s):  
Wei Xu ◽  
Wei Wang ◽  
Zhiyong Guo ◽  
Zhaoping Liu
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Single Crystalline ◽  
Cvd Method

Submillimeter-sized single-crystalline graphene arrays have been successfully prepared by a commercial printing-assisted chemical vapor deposition method.

Growth of single-crystalline nickel silicide nanowires with excellent physical properties

CrystEngComm ◽  
2015 ◽  
Vol 17 (9) ◽  
pp. 1911-1916 ◽  
Author(s):  
Jen-Yi Lin ◽  
Hsiu-Ming Hsu ◽  
Kuo-Chang Lu
Keyword(s):  
Chemical Vapor Deposition ◽  
Physical Properties ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Nickel Silicide ◽  
Chemical Vapor Deposition Method ◽  
Deposition Method ◽  
Single Crystalline

Single-crystalline NiSi2, Ni2Si and Ni31Si12 nanowires with outstanding characteristics were synthesized through a nickel transport chemical vapor deposition method.

Anisotropic Plasma ChemicalVapor Deposition of Copper Films in Trenches

2003 ◽  
Vol 766 ◽  
Author(s):  
Kosuke Takenaka ◽  
Masao Onishi ◽  
Manabu Takenshita ◽  
Toshio Kinoshita ◽  
Kazunori Koga ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Anisotropic Plasma ◽  
Bottom Surface ◽  
Chemical Vapor Deposition Method ◽  
Copper Films ◽  
Deposition Method ◽  
Via Holes

AbstractAn ion-assisted chemical vapor deposition method by which Cu is deposited preferentially from the bottom of trenches (anisotropic CVD) has been proposed in order to fill small via holes and trenches. By using Ar + H2 + C2H5OH[Cu(hfac)2] discharges with a ratio H2 / (H2 + Ar) = 83%, Cu is filled preferentially from the bottom of trenches without deposition on the sidewall and top surfaces. The deposition rate on the bottom surface of trenches is experimentally found to increase with decreasing its width.

scholarly journals Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Zhenzhen Tian ◽  
Xiaoming Yuan ◽  
Ziran Zhang ◽  
Wuao Jia ◽  
Jian Zhou ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Driving Force ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Nanowire Growth ◽  
Calphad Approach ◽  
Deposition Method ◽  
Large Area ◽  
Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

Synthesis of greenish phosphorus on carbon substrate

2021 ◽  
Author(s):  
Haipeng Wang ◽  
Cheng Liu ◽  
HuiLi Wang ◽  
Xinpeng Han ◽  
Shaojie Zhang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Chemical Vapor Deposition Method ◽  
Carbon Substrate ◽  
Deposition Method ◽  
Critical Factors ◽  
Simple Chemical

One of the phosphorus allotropes called greenish phosphorus was successfully synthesized by simple chemical vapor deposition method. We revealed that the critical factors in the formation mechanism of greenish phosphorus...

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