The effect of uniaxial stress on band structure and electron mobility of silicon

2008 ◽  
Vol 79 (4) ◽  
pp. 1071-1077 ◽  
Author(s):  
E. Ungersboeck ◽  
W. Gös ◽  
S. Dhar ◽  
H. Kosina ◽  
S. Selberherr
Keyword(s):  
Band Structure ◽  
Electron Mobility ◽  
Uniaxial Stress

Relative Analysis of GaAs, InSb, InP Using QWFET

2014 ◽  
Vol 984-985 ◽  
pp. 1080-1084 ◽  
Author(s):  
T.D. Subash ◽  
T. Gnanasekaran ◽  
J. Jagannathan ◽  
C. Divya
Keyword(s):  
Gallium Arsenide ◽  
Band Structure ◽  
Indium Phosphide ◽  
Low Power ◽  
Indium Antimonide ◽  
Electron Mobility ◽  
High Speed ◽  
Simulation Tool ◽  
Saturation Velocity ◽  
Relative Analysis

Indium Antimonide (InSb) has the greater electron mobility and saturation velocity of any semiconductor. Also InSb detectors are sensitive between 1–5 μm wavelengths and it belongs to III-V [13] component. In this paper we compare the InSb with some other major components like Indium Phosphide (InP) and Gallium Arsenide (GaAs) which are also from same III-V group. The analysis was made using the simulation tool TCAD and using the properties and band structure of those materials we compare InSb with InP and GaAs. The results we proposed shows that InSb is best for ultra high speed and very low power applications.

Uniaxial stress induced band structure changes in h-SiB

2018 ◽  
Author(s):  
M. S. Manju ◽  
K. M. Ajith ◽  
M. C. Valsakumar
Keyword(s):  
Band Structure ◽  
Uniaxial Stress ◽  
Structure Changes

Magnetic sub-band structure of HgTe under uniaxial stress

1976 ◽  
Vol 20 (9) ◽  
pp. 909-912 ◽  
Author(s):  
R. Yoshizaki ◽  
S. Tanaka
Keyword(s):  
Band Structure ◽  
Uniaxial Stress

Uniaxial Stress-Effect on the One-Dimensional Band Structure of [Pt (en)2][Pt (en)2Cl2](ClO4)4(en=ethylenediamine)

1987 ◽  
Vol 56 (3) ◽  
pp. 1197-1202 ◽  
Author(s):  
Masatoshi Tanaka ◽  
Wakahiko Kaneko ◽  
Susumu Kurita ◽  
Akio Yamada ◽  
Hirohito Fukutani
Keyword(s):  
Band Structure ◽  
Uniaxial Stress ◽  
Stress Effect ◽  
One Dimensional ◽  
The One

High electron mobility of AlxGa1−xN evaluated by unfolding the DFT band structure

2020 ◽  
Vol 117 (24) ◽  
pp. 242105
Author(s):  
Nick Pant ◽  
Zihao Deng ◽  
Emmanouil Kioupakis
Keyword(s):  
Band Structure ◽  
Electron Mobility ◽  
High Electron ◽  
High Electron Mobility
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