Preparation and characterization of sputtered Cu films containing insoluble Nb

2006 ◽  
Vol 100 (2-3) ◽  
pp. 490-495 ◽  
Author(s):  
T. Mahalingam ◽  
C.H. Lin ◽  
L.T. Wang ◽  
J.P. Chu
Keyword(s):  
Cu Films

Structural Characterization of Epitaxial GMR Magnetic Multilayers and Spin Valves Grown by Sputter Deposition

2000 ◽  
Vol 614 ◽  
Author(s):  
H. Geng ◽  
R. Loloee ◽  
J.W. Heckman ◽  
J. Bass ◽  
W.P. Pratt ◽  
...  
Keyword(s):  
High Resolution ◽  
Epitaxial Growth ◽  
Magnetic Multilayers ◽  
Sputter Deposition ◽  
Dc Magnetron Sputtering ◽  
Cu Films ◽  
Electron Backscatter ◽  
High Resolution Tem ◽  
Fcc Structure

ABSTRACTEpitaxial Cu/Py/FeMn and (Cu/Co)×20 GMR magnetic multilayers were grown on single crystal (011) Nb that was deposited on (1121) Al2O3 substrates by dc magnetron sputtering. Electron backscatter patterns (EBSPs) revealed that the Cu films display two twin variants, corresponding to two stacking sequences of {111} planes in fcc. The epitaxial orientation relationship between the bcc Nb and both fcc Cu variants was the Nishiyama-Wasserman (N-W) relationship. Conventional TEM observations revealed epitaxial growth for both the Cu/Py/FeMn and (Cu/Co)×20 multilayers. High-resolution TEM confirmed epitaxial growth of close packed (011) Nb on (1120) Al2O3 substrates with [111]Nb∥[0001]Al2O3. Numerous small twins were observed in the Cu near the Cu-Nb interface of the Cu/Py/FeMn multilayer. In the Cu/Co multilayer, the growth planes of the Cu and Co were found to be {100} instead of the expected close-packed {111} planes of the fcc structure.

Structural and electrical characterization of ion beam sputter deposited Mo/Cu films

2017 ◽  
Author(s):  
V. Harimohan ◽  
Mukul Gupta ◽  
Shilpam Sharma ◽  
B. Sundaravel ◽  
P. Magudapathy ◽  
...  
Keyword(s):  
Ion Beam ◽  
Electrical Characterization ◽  
Cu Films ◽  
Sputter Deposited

scholarly journals Development of LDPE Crystallinity in LDPE/Cu Composites

2021 ◽  
Author(s):  
Makki Abdelmouleh ◽  
Ilyes Jedidi
Keyword(s):  
Phase Change Materials ◽  
Research Work ◽  
Orthorhombic Phase ◽  
Copper Particle ◽  
Phase Model ◽  
Spectral Simulation ◽  
Two Phase ◽  
Cu Films ◽  
Three Phase

This chapter summarizes the study of the filler (ie copper) effect on LDPE phasic composition in LDPE/Cu composites prepared in solution. During this research work, a particular effort is focused on the use of DSC under non-standard conditions. Therewith, the presence of copper microparticles has a great effect on the network phase than on the crystalline long-range-order phase of LDPE structure. Furthermore, LDPE phasic composition in absence and presence of copper microparticles is investigated by FTIR spectroscopy followed by a spectral simulation of the band that appeared at 720 cm−1 corresponding to the CH2. Anywise, the two-phase model confirmed that no variation is observed of LDPE phase composition for all copper contents into LDPE/Cu films. However, with the three-phase model the orthorhombic phase fraction was found to be constant compared to the fraction of amorphous and that of network phase were found to increase and decrease respectively with increase in the copper particle load in the film. Overall, the thermal and structural behavior of LDPE in presence of copper particles allows this type to be used as phase change materials (PCMs) by adding a paraffin fraction in the LDPE/Cu composite. An update of the most relevant work carried out in the field of phasic characterization of polyethylene is presented in this chapter.

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
L. H. Walsh ◽  
G. O. Ramseyer ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
K. P. MacWilliams
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Copper Diffusion ◽  
Cu Films ◽  
Polycrystalline Thin Films ◽  
Sample Depth ◽  
Versus Sample ◽  
Sputter Deposited

AbstractAl and AI-1%Si 900 nanometer thin films were deposited on 100 nanometer Cu films on thermally oxidized (100 nanometer) Si wafers. The Al and Cu films were deposited using evaporation techniques, and the Al-1%Si film was sputter deposited. Different thin film samples were heated in vacuum to 175, 250, 330 and 400°C for 1 hour. The various annealed and original samples were compared using surface morphology, as well as composition versus sample depth. Differences between the Al and Al-1%Si samples are discussed.

Fabrication and Characterization of Rapidly Oxidized p-Type Cu2O Films from Cu Films and their Application to Heterojunction Thin-Film Solar Cells

2013 ◽  
Vol 52 (10S) ◽  
pp. 10MB17 ◽  
Author(s):  
Hyung Soo Kim ◽  
Jung Wook Lim ◽  
Sun Jin Yun ◽  
Min A Park ◽  
Se Yong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Cu Films ◽  
Cu2o Films ◽  
Fabrication And Characterization ◽  
P Type

Comment on "Electrochemical and Ultrahigh Vacuum Characterization of Ultrathin Cu Films on Pt(111)"

Langmuir ◽  
1994 ◽  
Vol 10 (3) ◽  
pp. 976-977 ◽  
Author(s):  
Philip N. Ross ◽  
Nenad Markovic
Keyword(s):  
Ultrahigh Vacuum ◽  
Cu Films
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