Nanoindentation of GaN/SiC thin films on silicon substrate

2017 ◽  
Vol 102 ◽  
pp. 151-156 ◽  
Author(s):  
A.S. Grashchenko ◽  
S.A. Kukushkin ◽  
A.V. Osipov ◽  
A.V. Redkov
Keyword(s):  
Thin Films ◽  
Silicon Substrate

Electrical and electro-optic characterization of nonlinear polymer thin films on silicon substrate

2014 ◽  
Author(s):  
Stefan Prorok ◽  
Marvin Schulz ◽  
Alexander Petrov ◽  
Manfred Eich ◽  
Jingdong Luo ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Polymer Thin Films ◽  
Electro Optic

Oriented and polycrystalline NdNiO3 thin films on silicon substrate

2000 ◽  
Vol 211 (1-3) ◽  
pp. 111-117 ◽  
Author(s):  
P Laffez ◽  
M Zaghrioui ◽  
R Retoux ◽  
P Lacorre
Keyword(s):  
Thin Films ◽  
Silicon Substrate

scholarly journals Structural and Mechanical Properties of Nanostructured C-Ag Thin Films Synthesized by Thermionic Vacuum Arc Method

2018 ◽  
Vol 2018 ◽  
pp. 1-10 ◽  
Author(s):  
Rodica Vladoiu ◽  
Aurelia Mandes ◽  
Virginia Dinca-Balan ◽  
Vilma Bursikova
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Modulus ◽  
Silicon Substrate ◽  
Vacuum Arc ◽  
Average Roughness ◽  
Thermionic Vacuum Arc ◽  
Induced Aggregation ◽  
Ag Film

Nanostructured C-Ag thin films of 200 nm thickness were successfully synthesized by the Thermionic Vacuum Arc (TVA) method. The influence of different substrates (glass, silicon wafers, and stainless steel) on the microstructure, morphology, and mechanical properties of nanostructured C-Ag thin films was characterized by High-Resolution Transmission Electron Microscopy (HRTEM), Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), and TI 950 (Hysitron) nanoindenter equipped with Berkovich indenter, respectively. The film’s hardness deposited on glass (HC-Ag/Gl = 1.8 GPa) was slightly lower than in the case of the C-Ag film deposited on a silicon substrate (HC-Ag/Si = 2.2 GPa). Also the apparent elastic modulus Eeff was lower for C-Ag/Gl sample (Eeff = 100 GPa) than for C-Ag/Si (Eeff = 170 GPa), while the values for average roughness are Ra=2.9 nm (C-Ag/Si) and Ra=10.6 (C-Ag/Gl). Using the modulus mapping mode, spontaneous and indentation-induced aggregation of the silver nanoparticles was observed for both C-Ag/Gl and C-Ag/Si samples. The nanocomposite C-Ag film exhibited not only higher hardness and effective elastic modulus, but also a higher fracture resistance toughness to the silicon substrate compared to the glass substrate.

scholarly journals Rapid Reduction of Graphene Oxide Thin Films on Large-Area Silicon Substrate

2020 ◽  
Vol 1535 ◽  
pp. 012027
Author(s):  
M Masrie ◽  
SAM Badaruddin ◽  
MRM Hussin ◽  
NMRM Nor ◽  
J Joe
Keyword(s):  
Thin Films ◽  
Graphene Oxide ◽  
Silicon Substrate ◽  
Oxide Thin Films ◽  
Large Area ◽  
Rapid Reduction

Characterisation of Ferroelectric Lithium Tantalate Thin Films Prepared by a Sol-Gel Process

1993 ◽  
Vol 321 ◽  
Author(s):  
Chianping Ye ◽  
Paul Baude ◽  
Dennis L. Polla
Keyword(s):  
Thin Films ◽  
Curie Temperature ◽  
Single Crystal ◽  
Silicon Substrate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Precursor Solution ◽  
Pyroelectric Coefficient ◽  
Crystal Silicon ◽  
Sol Gel Process

ABSTRACTThin LiTaO3 films were prepared by spin coating of polymerized sol-gel precursor solution. Films have been deposited on single crystal silicon substrate, Ti/Pt or SiO2 coated silicon substrate. Films were characterized by x-ray diffraction, dielectric and pyroelectric Measurements. High Curie temperature (above 550 °C) was assumed for LiTaO3 thin films from the temperature dependence of dielectric constant. Replacing 35% of tantalum by titanium atoms in the LiTaO3 precursor solution has resulted the thin films with Curie temperature of 330 °C. The lower Curie temperature leads to the larger pyroelectric coefficient at room-temperature, which is more than double that of the undoped LiTaO3 thin films. The dielectric, pyroelectric, and ferroelectric properties have been compared to the single crystal LiTaO3 and ceramic Li0.91Ta0.73Ti0.36O3. LiTaO3 thin films are available by sol-gel process at low temperature, and their properties may possibly be controlled by varying the composition of the sol-gel precursor solution.

scholarly journals Effect of annealing temperature on optical and electrical properties of metallophthalocyanine thin films deposited on silicon substrate

2016 ◽  
Vol 34 (3) ◽  
pp. 676-683 ◽  
Author(s):  
R. Skonieczny ◽  
P. Popielarski ◽  
W. Bała ◽  
K. Fabisiak ◽  
K. Paprocki ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectra ◽  
Silicon Substrate ◽  
Thin Layers ◽  
Excitation Wavelength ◽  
Type Silicon ◽  
Atomic Force ◽  
Before And After ◽  
Evaporation Technique ◽  
Polarized Raman

AbstractThe cobalt phthalocyanine (CoPc) thin films (300 nm thick) deposited on n-type silicon substrate have been studied using micro-Raman spectroscopy, atomic force spectroscopy (AFM) and I-V measurement. The CoPc thin layers have been deposited at room temperature by the quasi-molecular beam evaporation technique. The micro-Raman spectra of CoPc thin films have been recorded in the spectral range of 1000 cm-1 to 1900 cm-1 using 488 nm excitation wavelength. Moreover, using surface Raman mapping it was possible to obtain information about polymorphic forms distribution (before and after annealing) of metallophthalocyanine (α and β form) from polarized Raman spectra. The I-V characteristics of the Au/CoPc/n-Si/Al Schottky barrier were also investigated. The obtained results showed that influence of the annealing process plays a crucial role in the ordering and electrical conductivity of the molecular structure of CoPc thin films deposited on n-type silicon substrate.

Preparation of highly c-axis oriented Sr0.6Ba0.4Nb2O6 thin films grown on Silicon substrate by the sol–gel process

2006 ◽  
Vol 99 (1) ◽  
pp. 10-14 ◽  
Author(s):  
Zhiru Shen ◽  
Hui Ye ◽  
C.L. Mak ◽  
K.H. Wong ◽  
T.Y. Yum ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Substrate ◽  
Sol Gel ◽  
Sol Gel Process

Preparation of (La,Sr)MnO3 Thin Film by Chemical Solution Deposition

2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Resistivity ◽  
Silicon Substrate ◽  
Chemical Solution Deposition ◽  
Buffer Layers ◽  
Chemical Solution ◽  
Solution Deposition ◽  
Ferroelectric Capacitor ◽  
Lower Electrical Resistivity

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

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