Influence of the gate and dielectric thickness on the electro-optical performance of SRO-based LECs: Resistive switching, IR and deep UV emission

2017 ◽  
Vol 192 ◽  
pp. 919-924 ◽  
Author(s):  
S.A. Cabañas-Tay ◽  
L. Palacios-Huerta ◽  
M. Aceves-Mijares ◽  
J. Alvarez-Quintana ◽  
S.A. Pérez-García ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Optical Performance ◽  
Dielectric Thickness ◽  
Uv Emission ◽  
Deep Uv

Deep-UV emission at 260 nm from MBE-grown AlGaN/AlN quantum-well structures

2019 ◽  
Vol 512 ◽  
pp. 213-218 ◽  
Author(s):  
Wenxian Yang ◽  
Yukun Zhao ◽  
Yuanyuan Wu ◽  
Xuefei Li ◽  
Zhiwei Xing ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Well Structures ◽  
Uv Emission ◽  
Deep Uv

scholarly journals Gas Detection Using Portable Deep-UV Absorption Spectrophotometry: A Review

Sensors ◽  
2019 ◽  
Vol 19 (23) ◽  
pp. 5210 ◽  
Author(s):  
Sulaiman Khan ◽  
David Newport ◽  
Stéphane Le Calvé
Keyword(s):  
Gas Sensing ◽  
Low Cost ◽  
Absorption Spectrometry ◽  
Optical Filters ◽  
Uv Absorption ◽  
Uv Photodetectors ◽  
Absorption Spectrophotometry ◽  
Uv Emission ◽  
Selective Approach ◽  
Deep Uv

Several gas molecules of environmental and domestic significance exhibit a strong deep-UV absorption. Therefore, a sensitive and a selective gas detector based on this unique molecular property (i.e., absorption at a specific wavelength) can be developed using deep-UV absorption spectrophotometry. UV absorption spectrometry provides a highly sensitive, reliable, self-referenced, and selective approach for gas sensing. This review article addresses the recent progress in the application of deep-UV absorption for gas sensing owing to its inherent features and tremendous potentials. Applications, advancements, and challenges related to UV emission sources, gas cells, and UV photodetectors are assessed and compared. We present the relevant theoretical aspects and challenges associated with the development of portable sensitive spectrophotometer. Finally, the applications of UV absorption spectrometry for ozone, NO2, SO2, and aromatic organic compounds during the last decades are discussed and compared. A portable UV absorption spectrophotometer can be developed by using LEDs, hollow core waveguides (HCW), and UV photodetectors (i.e., photodiodes). LED provides a portable UV emission source with low power input, low-intensity drifts, low cost, and ease of alignment. It is a quasi-chromatic UV source and covers the absorption band of molecules without optical filters for absorbance measurement of a target analyte. HCWs can be applied as a miniature gas cell for guiding UV radiation for measurement of low gas concentrations. Photodiodes, on the other hand, offer a portable UV photodetector with excellent spectral selectivity with visible rejection, minimal dark current, linearity, and resistance against UV-aging.

scholarly journals The influence of technology and switching parameters on resistive switching behavior of Pt/HfO2/TiN MIM structures

2014 ◽  
Vol 27 (4) ◽  
pp. 621-630 ◽  
Author(s):  
Albena Paskaleva ◽  
Boris Hudec ◽  
Peter Jancovic ◽  
Karol Fröhlich ◽  
Dencho Spassov
Keyword(s):  
Resistive Switching ◽  
Deposition Process ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Conductive Filament ◽  
Metal Insulator ◽  
Dielectric Thickness ◽  
Metal Insulator Metal ◽  
Tin Metal ◽  
Mim Capacitors

Resistive switching (RS) effects in Pt/HfO2/TiN metal-insulator-metal (MIM) capacitors have been investigated in dependence on the TiN bottom electrode engineering, deposition process, switching conditions and dielectric thickness. It is found that RS ratio depends strongly on the amount of oxygen introduced on TiN surface during interface engineering. In some structures a full recovery of conductive filament is observed within more than 100 switching cycles. RS effects are discussed in terms of different energy needed to dissociate O ions in structures with different TiN electrode treatment.

scholarly journals Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

2017 ◽  
Vol 111 (9) ◽  
pp. 091104 ◽  
Author(s):  
S. M. Islam ◽  
Vladimir Protasenko ◽  
Kevin Lee ◽  
Sergei Rouvimov ◽  
Jai Verma ◽  
...  
Keyword(s):  
Uv Emission ◽  
Deep Uv ◽  
Quantum Heterostructures

Epitaxial growth of high quality BAlGaN quaternary lattice matched to AlN on 6H–SiC substrate by LP-MOVPE for deep-UV emission

2002 ◽  
Vol 237-239 ◽  
pp. 972-977 ◽  
Author(s):  
Takayoshi Takano ◽  
Makoto Kurimoto ◽  
Jun Yamamoto ◽  
Hideo Kawanishi
Keyword(s):  
Epitaxial Growth ◽  
High Quality ◽  
Uv Emission ◽  
Deep Uv ◽  
Lattice Matched

Chemical Infiltration through Deep UV Photoresist

2016 ◽  
Vol 255 ◽  
pp. 117-121 ◽  
Author(s):  
Philippe Garnier ◽  
Marc Neyens
Keyword(s):  
Integrated Circuits ◽  
Performance Improvement ◽  
Gate Oxide ◽  
Clear Understanding ◽  
Optical Performance ◽  
Wet Chemical ◽  
Deep Uv ◽  
Wet Etch ◽  
Chemical Etchant ◽  
Positive Resist

Still nowadays in integrated circuits manufacturing, few materials patterns are defined by a wet etch on patterned deep UV photoresist. From dies to dies generation, an optical performance improvement is required, hence an evolution with thinner and thinner positive resist. This makes these latter more sensitive to wet chemical etchant through the polymer, reducing their protection of the underneath material. Following characterizations enable a clear understanding of BHF (Buffered HF) benefits versus diluted HF during a gate oxide definition.

Improving the Optical Performance and Life Time of Deep UV LEDs by Thermoelectric Control

2017 ◽  
Author(s):  
Pablo Fredes ◽  
Ulrich Raff ◽  
Javiera Cuenca ◽  
Ernesto Gramsch ◽  
Cristian Soto
Keyword(s):  
Life Time ◽  
Optical Performance ◽  
Deep Uv ◽  
Uv Leds

scholarly journals Deep UV Emission from Highly Ordered AlGaN/AlN Core–Shell Nanorods

2018 ◽  
Vol 10 (39) ◽  
pp. 33441-33449 ◽  
Author(s):  
Pierre-Marie Coulon ◽  
Gunnar Kusch ◽  
Robert W. Martin ◽  
Philip A. Shields
Keyword(s):  
Core Shell ◽  
Uv Emission ◽  
Deep Uv
Sign in / Sign up

Export Citation Format

Share Document