Resonant soft X-ray emission and X-ray absorption studies on Ga1-xMnxN grown by pulsed laser deposition

2011 ◽  
Vol 8 (5) ◽  
pp. 1608-1610 ◽  
Author(s):  
Satheesh Krishnamurthy ◽  
Brian Kennedy ◽  
Fintan McGee ◽  
M. Venkatesan ◽  
J. M. D. Coey ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption

X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

2004 ◽  
Vol 19 (11) ◽  
pp. 1322-1324 ◽  
Author(s):  
A Erlacher ◽  
M Ambrico ◽  
V Capozzi ◽  
V Augelli ◽  
H Jaeger ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
X Ray Absorption

scholarly journals X-ray Absorption Near Edge Structures of Silicon Nitride Thin Film by Pulsed Laser Deposition

2004 ◽  
Vol 45 (7) ◽  
pp. 2039-2041 ◽  
Author(s):  
Takeo Suga ◽  
Teruyasu Mizoguchi ◽  
Masahiro Kunisu ◽  
Kazuyoshi Tatsumi ◽  
Tomoyuki Yamamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
X Ray Absorption

Study on X-ray Absorption Near Edge Structure of Eu Centers in CaAl2O4:Eu Phosphor Thin Films Prepared by Pulsed Laser Deposition

2007 ◽  
Vol 46 (9A) ◽  
pp. 5874-5878
Author(s):  
Takashi Kunimoto ◽  
Tetsuo Honma ◽  
Akira Yamane ◽  
Yan-Lin Shao ◽  
Ken-nosuke Kakehi ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Edge Structure ◽  
X Ray ◽  
X Ray Absorption

X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES ON THE BONDING PROPERTIES OF AMORPHOUS CARBON NITRIDE FILMS SYNTHESIZED BY PULSED LASER DEPOSITION WITH DIFFERENT SUBSTRATE TEMPERATURES

2005 ◽  
Vol 12 (02) ◽  
pp. 185-195
Author(s):  
M. RUSOP ◽  
T. SOGA ◽  
T. JIMBO
Keyword(s):  
Pulsed Laser Deposition ◽  
Amorphous Carbon ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Measurement Techniques ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Amorphous Carbon Nitride ◽  
Substrate Temperatures

Amorphous carbon nitride films ( a-CN x) were deposited by pulsed laser deposition of camphoric carbon target with different substrate temperatures (ST). The influence of ST on the synthesis of a-CN x films was investigated. The nitrogen-to-carbon (N/C) and oxygen-to-carbon (O/C) atomic ratios, bonding state, and microstructure of the deposited a-CN x films were characterized by X-ray photoelectron spectroscopy and were confirmed by other standard measurement techniques. The bonding states between C and N , and C and O in the deposited films were found to be significantly influenced by ST during the deposition process. The N/C and O/C atomic ratios of the a-CN x films reached the maximum value at 400°C. ST of 400°C was proposed to promote the desired sp 3-hybridized C and the C 3 N 4 phase. The C–N bonding of C–N , C=N and C≡N were observed in the films.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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