Electron spectroscopy of the interface carbon layer formation on the cleavage surfaces of the layered semiconductor In4Se3 crystals

2005 ◽  
Vol 142 (2) ◽  
pp. 121-128 ◽  
Author(s):  
P.V. Galiy ◽  
A.V. Musyanovych ◽  
T.M. Nenchuk
Keyword(s):  
Electron Spectroscopy ◽  
Carbon Layer ◽  
Layer Formation ◽  
Layered Semiconductor

scholarly journals Carbon Layer Formation on Bamboo Flooring by CO2 Laser.

2003 ◽  
Vol 31 (1) ◽  
pp. 63-67
Author(s):  
Kaori NAGAI ◽  
Kenji SUGIMOTO
Keyword(s):  
Co2 Laser ◽  
Carbon Layer ◽  
Layer Formation

Carbon layer formation on the Pt (111) surface as a function of temperature

1978 ◽  
Vol 15 (2) ◽  
pp. 559-562 ◽  
Author(s):  
J. C. Hamilton ◽  
J. M. Blakely
Keyword(s):  
Carbon Layer ◽  
Layer Formation

Carbon-layer formation at silicon-carbide—glass interfaces

1993 ◽  
Vol 162 (1-2) ◽  
pp. 45-52 ◽  
Author(s):  
G. Qi ◽  
K.E. Spear ◽  
C.G. Pantano
Keyword(s):  
Silicon Carbide ◽  
Carbon Layer ◽  
Layer Formation

EFFECT OF Cu DEPOSITION AND ANNEALING UPON A GaSe/Si(111) HETEROJUNCTION

1999 ◽  
Vol 06 (06) ◽  
pp. 1173-1178 ◽  
Author(s):  
B. ABIDRI ◽  
J.-P. LACHARME ◽  
M. GHAMNIA ◽  
C. A. SÉBENNE ◽  
M. EDDRIEF ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Low Energy ◽  
Layered Semiconductor ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron ◽  
Temperature Interaction

Single crystal substrates of GaSe, a layered semiconductor with a 2 eV band gap, were epitaxially grown by MBE onto a Si(111)(1×1)–H substrate, forming a perfectly abrupt heterojunction. Controlled amounts of Cu were sequentially deposited onto the clean passive surface of GaSe from a few tenths to several hundred monolayers (1 ML refers to the GaSe surface: 8 × 1014 at/cm 2). After given Cu depositions, the effect of UHV annealings at increasing temperatures was studied, until GaSe removal. The system was characterized as a function of either Cu deposit or annealing temperature using low energy electron diffraction, Auger electron spectroscopy and photoemission yield spectroscopy. The room temperature interaction starts as an apparent intercalation process until Cu islands begin to form, beyond about 50 ML. Upon annealings as low as 250°C, several ML of Cu disappear into the bulk of an apparently recovered GaSe, towards the GaSe/Si interface.

Diamond-like carbon layer formation on graphite by excimer laser irradiation

1998 ◽  
Vol 66 (6) ◽  
pp. 659-661 ◽  
Author(s):  
Á. Mechler ◽  
P. Heszler ◽  
Z. Kántor ◽  
T. Szörényi ◽  
Z. Bor
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Carbon Layer ◽  
Diamond Like Carbon ◽  
Layer Formation ◽  
Excimer Laser Irradiation

Investigation of Electronic Structures of Titanium Nitride Layers on TiNi Substrate

2010 ◽  
Vol 163 ◽  
pp. 76-79
Author(s):  
D. Chrobak ◽  
Edward Rówiński
Keyword(s):  
Titanium Nitride ◽  
Electron Emission ◽  
Electronic Structures ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Carbon Layer ◽  
Dielectric Constants ◽  
Model Parameters ◽  
Graphite Structure ◽  
Nitride Layers

The electronic structure of titanium nitride layers formed on the TiNi substrates is examined by Auger electron spectroscopy and electron emission distribution methods. Spectral analysis shows that the on-top carbon layer has a graphite structure and the neighbouring layer is constituted of titanium nitride. The shape of the main valence spectra was explained by the Hubbard model. From the comparison of experiment and theory the model parameters were estimated. Besides, the existence of surface and internal plasmons verifies the layered structures with average dielectric constants.

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