Improvement of electrochemical and thermal stability of LiFePO4@C batteries by depositing amorphous silicon film

2011 ◽  
Vol 56 (14) ◽  
pp. 4937-4941 ◽  
Author(s):  
Yingbin Lin ◽  
Yanmin Yang ◽  
Ying Lin ◽  
Baozhi Zeng ◽  
Guiying Zhao ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Thermal Stability Of

Photo and Thermal Stability of Chlorine Doped Amorphous Silicon TFTs

1997 ◽  
Vol 471 ◽  
Author(s):  
J. H. Kim ◽  
J. H. Choi ◽  
C. W. Kim ◽  
J. H. Souk
Keyword(s):  
Thermal Stability ◽  
Amorphous Silicon ◽  
Double Layer ◽  
Flow Rate ◽  
High Stability ◽  
Elevated Temperatures ◽  
Silicon Film ◽  
Gas Mixture ◽  
Amorphous Silicon Film ◽  
Thermal Stability Of

ABSTRACTThe Cl doped amorphous silicon film was deposited from SiH4, SiH2C12 and H2 gas mixture by PECVD process and their properties with various SiH2C12 flow rate is discussed. Controlling the amount of Cl doped was crucial for acquiring high stability TFT without lowering on current. Amorphous silicon and Cl doped amorphous silicon double layer TFT structure, with satisfactory on current and throughput, proved to be more stable than conventional amorphous silicon TFT in photo state and in elevated temperatures.

scholarly journals Modeling of Beta Conductivity in Tritiated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
Stefan Costea ◽  
Franco Gaspari ◽  
Tome Kosteski ◽  
Stefan Zukotynski ◽  
Nazir P. Kherani ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Radioactive Decay ◽  
Dangling Bonds ◽  
Electron Hole ◽  
Beta Particles ◽  
Amorphous Silicon Film ◽  
Recombination Centers

ABSTRACTThe change with time in the electrical conductivity of a hydrogenated-tritiated amorphous silicon film (a-Si:H:T) has been studied. The conductivity decreased with time after deposition. A model is developed to account for the decrease. The radioactive decay of tritium into helium produces energetic beta particles. Each β particle creates over 1500 electron-hole pairs in the film thereby increasing the conductivity of the film. The 3He atoms diffuse away leaving dangling bonds behind. We find that neutral dangling bonds (D0) are responsible for the decrease in conductivity by acting as recombination centers in the material.

Silicon-Based Solar Cell Fabricated by Metal-Induced Lateral Crystallization of Amorphous Silicon Film

2006 ◽  
Vol 45 (10A) ◽  
pp. 7675-7676 ◽  
Author(s):  
Jun-Dar Hwang ◽  
Tzu-Yi Chi ◽  
Jun-Chin Liu ◽  
Chung-Yuan Kung ◽  
In-Cha Hsein
Keyword(s):  
Solar Cell ◽  
Amorphous Silicon ◽  
Silicon Film ◽  
Amorphous Silicon Film ◽  
Lateral Crystallization ◽  
Silicon Based

Symmetric Substructure Dual Gratings for Enhancement of Light Absorption in Amorphous Silicon Film Solar Cells

2016 ◽  
Vol 36 (3) ◽  
pp. 0325001
Author(s):  
安倩 An Qian ◽  
侯金 Hou Jin ◽  
王文珍 Wang Wenzhen ◽  
杨春勇 Yang Chunyong ◽  
钟志有 Zhong Zhiyou
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Light Absorption ◽  
Silicon Film ◽  
Amorphous Silicon Film

Thickness change in an annealed amorphous silicon film detected by spectroscopic ellipsometry

1996 ◽  
Vol 279 (1-2) ◽  
pp. 174-179 ◽  
Author(s):  
T. Yamaguchi ◽  
Y. Kaneko ◽  
A.H. Jayatissa ◽  
M. Aoyama
Keyword(s):  
Amorphous Silicon ◽  
Spectroscopic Ellipsometry ◽  
Silicon Film ◽  
Thickness Change ◽  
Amorphous Silicon Film
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