Application of atomic force microscopy and scaling analysis of images to predict the effect of current density, temperature and leveling agent on the morphology of electrolytically produced copper

2006 ◽  
Vol 51 (11) ◽  
pp. 2255-2260 ◽  
Author(s):  
T. Zhao ◽  
D. Zagidulin ◽  
G. Szymanski ◽  
J. Lipkowski
Keyword(s):  
Atomic Force Microscopy ◽  
Current Density ◽  
Scaling Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Leveling Agent

Scaling Analysis of a- and poly-Si Surface Roughness by Atomic Force Microscopy

1994 ◽  
Vol 367 ◽  
Author(s):  
T. Yoshinobu ◽  
A. Iwamoto ◽  
K. Sudoh ◽  
H. Iwasaki
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Surface Area ◽  
Scaling Behavior ◽  
Linear Size ◽  
Scaling Analysis ◽  
Macroscopic Scale ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Exponent

AbstractThe scaling behavior of the surface roughness of a-and poly-Si deposited on Si was investigated by atomic force microscopy (AFM). The interface width W(L), defined as the rms roughness as a function of the linear size of the surface area, was calculated from various sizes of AFM images. W(L) increased as a power of L with the roughness exponent ∝ on shorter length scales, and saturated at a constant value of on a macroscopic scale. The value of roughness exponent a was 0.48 and 0.90 for a-and poly-Si, respectively, and σ was 1.5 and 13.6nm for 350nm-thick a-Si and 500nm-thick poly-Si, respectively. The AFM images were compared with the surfaces generated by simulation.

Current Dependence of Reversible Electromigration Induced Resistance Changes in Short Al Lines and Interpretation of Irreversible Effects

1996 ◽  
Vol 428 ◽  
Author(s):  
A. H. Verbruggen ◽  
M. J. C. Van Den Homberg ◽  
A. J. Kalkman ◽  
J. R. Kraayeveld ◽  
A. W.-J. Willemsen ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Induced Resistance ◽  
Current Density ◽  
Linear Dependence ◽  
Resistance Change ◽  
Current Dependence ◽  
Force Microscopy ◽  
Atomic Force ◽  
Irreversible Effects ◽  
Current Densities

AbstractChanges in the electrical resistance induced by electromigration in short (< 20 μm) Al lines show a rather well-defined behavior. For current densities j below a critical value jc the resistance change saturates with time and the resistance fully recovers when the current is switched off. Above the critical current density the induced resistance changes do not saturate and vary approximately linearly with time. In this case the resistance changes recover only partially after removal of the current. We report (i) measurements of the current dependence of the magnitude of the reversible resistance changes and (ii) the results of atomic force microscopy (AFM) inspection of the lines after stressing with current densities above jc. The resistance measurements were made with a high-resolution AC bridge technique. The samples were pure, unpassivated Al lines with a film thickness of 100 nm and a line width of 2 gm. The results show a linear dependence between the magnitude of the reversible changes and the current density. The linear dependence is predicted by two models. The first is based on a description of the vacancy flux and the second on a description of the build-up of mechanical stress during an electromigration experiment. To study the origin of the irreversible effects, samples were stressed at current densities above jc, and the induced irreversible changes in the resistance were recorded. Both negative and positive changes of the resistance were observed. After six hours the experiment was stopped and the lines were inspected by atomic force microscopy. It was always possible to observe a void, a hillock or a hillock/void pair that was created during the passage of the DC current. Moreover, lines with decreasing resistance during stress always showed a hillock and lines with an increased resistance always showed a void.

Scaling Analysis ofSiO2/Si Interface Roughness by Atomic Force Microscopy

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 383-387 ◽  
Author(s):  
Tatsuo Yoshinobu ◽  
Atsushi Iwamoto ◽  
Hiroshi Iwasaki
Keyword(s):  
Atomic Force Microscopy ◽  
Interface Roughness ◽  
Scaling Analysis ◽  
Force Microscopy ◽  
Atomic Force

Scaling analysis of Fe-implanted Ge surfaces using atomic force microscopy

2002 ◽  
Vol 48 (2-3) ◽  
pp. 241-247
Author(s):  
R. Venugopal ◽  
B. Sundaravel ◽  
I.H. Wilson ◽  
J.B. Xu
Keyword(s):  
Atomic Force Microscopy ◽  
Scaling Analysis ◽  
Force Microscopy ◽  
Atomic Force

QUANTITATIVE STUDY OF SURFACE MORPHOLOGY BY ATOMIC FORCE MICROSCOPY

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4395-4400
Author(s):  
Y. CHOI ◽  
N. I. CHO ◽  
J. I. CHOE
Keyword(s):  
Surface Roughness ◽  
Atomic Force Microscopy ◽  
Current Density ◽  
Chromic Acid ◽  
Average Surface Roughness ◽  
Peak Current Density ◽  
Average Surface ◽  
Force Microscopy ◽  
Atomic Force ◽  
Off Time

Atomic force microscopy was applied to study the formation and growth mechanism of thin multilayers of chromium-molybdenum and chrome prepared by electro-pulse plating, respectively. The chromium-molybdenum and chrome layers were prepared using direct current density of 1.6 mA.mm -2 and pulse currents with on-off time from 5 to 2000 ms in the bath containing 300g l-1 of chromic acid and 75g l-1 ammonium molybdate, and 250g l-1 of chromic acid and 5g l-1 of sulfuric acid, respectively. The higher current density enhanced nucleation rate which resulted in refining grain size. The micro-hardness of the pulse plated chrome and chromium-molybdenum alloy layers increased with the duration of on-off time and pulse current density. The average surface roughness of chrome layer is increased with increasing on/off time ratio for a given peak current density and voltage because the growth and dissolution mainly occurs during on-time and off-time, respectively. However, the average surface roughness of chromium-molybdenum alloy layer is decreased with increasing on/off time ratio for a given peak current density and voltage because the alloying element in the layer.

Roughness Characterization of Si(110) Etched in TMAH by Atomic Force Microscopy

1999 ◽  
Vol 605 ◽  
Author(s):  
Z. Moktadir ◽  
K. Sato ◽  
A. Matsumuro ◽  
K. Kayukawa ◽  
M. Shikida
Keyword(s):  
Atomic Force Microscopy ◽  
Ammonium Hydroxide ◽  
Power Spectrum Density ◽  
Scaling Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Exponent ◽  
Tetra Methyl Ammonium Hydroxide ◽  
Spectrum Density

AbstractWe have investigated the roughness of a silicon (110)-oriented surface after being etched with 20% TMAH (Tetra-methyl Ammonium Hydroxide). We have used an Atomic Force Microscope to determine the roughness exponent α using three different methods: fractal, power spectrum density and scaling analysis. The value of the parameter α was identified to be close to 1/2. This value is different from the KPZ value, which is 0.4 in 2+1 dimension

Time‐dependent morphology changes in thin silver films on mica: A scaling analysis of atomic force microscopy results

1996 ◽  
Vol 105 (13) ◽  
pp. 5542-5551 ◽  
Author(s):  
David J. Semin ◽  
Alan Lo ◽  
Shane E. Roark ◽  
Rex T. Skodje ◽  
Kathy L. Rowlen
Keyword(s):  
Atomic Force Microscopy ◽  
Time Dependent ◽  
Scaling Analysis ◽  
Silver Films ◽  
Force Microscopy ◽  
Atomic Force ◽  
Morphology Changes
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