scholarly journals Metal-assisted photochemical etching of GaN nanowires: The role of metal distribution

2019 ◽  
Vol 103 ◽  
pp. 66-71 ◽  
Author(s):  
Qi Wang ◽  
Guodong Yuan ◽  
Shuai Zhao ◽  
Wenqiang Liu ◽  
Zhiqiang Liu ◽  
...  
Keyword(s):  
Metal Distribution ◽  
Gan Nanowires ◽  
Photochemical Etching

The role of GaN/AlN double buffer layer in the crystal growth and photoluminescence of GaN nanowires

2005 ◽  
Vol 413 (4-6) ◽  
pp. 479-483 ◽  
Author(s):  
Heon-Jin Choi ◽  
Dae-Hee Kim ◽  
Tae-Geun Kim ◽  
Yun-Mo Sung
Keyword(s):  
Crystal Growth ◽  
Buffer Layer ◽  
Gan Nanowires

scholarly journals Communication—The Role of the Metal-Semiconductor Junction in Pt-Assisted Photochemical Etching of Silicon Carbide

2015 ◽  
Vol 5 (3) ◽  
pp. P148-P150 ◽  
Author(s):  
Markus Leitgeb ◽  
Andreas Backes ◽  
Christopher Zellner ◽  
Michael Schneider ◽  
Ulrich Schmid
Keyword(s):  
Silicon Carbide ◽  
Photochemical Etching ◽  
Semiconductor Junction

scholarly journals Growth and Characterization of High-Quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
L. Shekari ◽  
H. Abu Hassan ◽  
S. M. Thahab ◽  
Z. Hassan
Keyword(s):  
Gallium Nitride ◽  
Thermal Evaporation ◽  
Lattice Mismatch ◽  
Growth Direction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Nanowires ◽  
Transmission Electron

In the current research, an easy and inexpensive method is used to synthesize highly crystalline gallium nitride (GaN) nanowires (NWs) on two different substrates [i.e., porous zinc oxide (PZnO) and porous gallium nitride (PGaN)] on Si (111) wafer by thermal evaporation without any catalyst. Microstructural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of the substrates in the nucleation and alignment of the GaN NWs. Further structural and optical characterizations were performed using high-resolution X-ray diffraction, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. Results indicate that the NWs have a single-crystal hexagonal GaN structure and growth direction in the (0001) plane. The quality and density of GaN NWs grown on different substrates are highly dependent on the lattice mismatch between the NWs and their substrates. Results indicate that NWs grown on PGaN have better quality and higher density compared to NWs on PZnO.

Spontaneous Nucleation and Growth of GaN Nanowires: The Fundamental Role of Crystal Polarity

Nano Letters ◽  
2012 ◽  
Vol 12 (12) ◽  
pp. 6119-6125 ◽  
Author(s):  
Sergio Fernández-Garrido ◽  
Xiang Kong ◽  
Tobias Gotschke ◽  
Raffaella Calarco ◽  
Lutz Geelhaar ◽  
...  
Keyword(s):  
Nucleation And Growth ◽  
Spontaneous Nucleation ◽  
Gan Nanowires

Role of sediment composition in trace metal distribution in lake sediments

2002 ◽  
Vol 17 (9) ◽  
pp. 1171-1181 ◽  
Author(s):  
L El Bilali ◽  
P.E Rasmussen ◽  
G.E.M Hall ◽  
D Fortin
Keyword(s):  
Trace Metal ◽  
Lake Sediments ◽  
Metal Distribution ◽  
Sediment Composition ◽  
Trace Metal Distribution

Role of the surface density of states in understanding size-dependent surface band bending in GaN nanowires

2020 ◽  
Vol 510 ◽  
pp. 145502 ◽  
Author(s):  
Santanu Parida ◽  
Aloka Ranjan Sahoo ◽  
Kishore K. Madapu ◽  
S. Mathi Jaya ◽  
Sandip Dhara
Keyword(s):  
Density Of States ◽  
Surface Density ◽  
Surface Band ◽  
Band Bending ◽  
Size Dependent ◽  
Gan Nanowires
Sign in / Sign up

Export Citation Format

Share Document