scholarly journals Growth and Characterization of High-Quality GaN Nanowires on PZnO and PGaN by Thermal Evaporation

2011 ◽  
Vol 2011 ◽  
pp. 1-6 ◽  
Author(s):  
L. Shekari ◽  
H. Abu Hassan ◽  
S. M. Thahab ◽  
Z. Hassan
Keyword(s):  
Gallium Nitride ◽  
Thermal Evaporation ◽  
Lattice Mismatch ◽  
Growth Direction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gan Nanowires ◽  
Transmission Electron

In the current research, an easy and inexpensive method is used to synthesize highly crystalline gallium nitride (GaN) nanowires (NWs) on two different substrates [i.e., porous zinc oxide (PZnO) and porous gallium nitride (PGaN)] on Si (111) wafer by thermal evaporation without any catalyst. Microstructural studies by scanning electron microscopy and transmission electron microscope measurements reveal the role of the substrates in the nucleation and alignment of the GaN NWs. Further structural and optical characterizations were performed using high-resolution X-ray diffraction, energy-dispersive X-ray spectroscopy, and photoluminescence spectroscopy. Results indicate that the NWs have a single-crystal hexagonal GaN structure and growth direction in the (0001) plane. The quality and density of GaN NWs grown on different substrates are highly dependent on the lattice mismatch between the NWs and their substrates. Results indicate that NWs grown on PGaN have better quality and higher density compared to NWs on PZnO.

scholarly journals Characterization of individual stacking faults in a wurtzite GaAs nanowire by nanobeam X-ray diffraction

2017 ◽  
Vol 24 (5) ◽  
pp. 981-990 ◽  
Author(s):  
Arman Davtyan ◽  
Sebastian Lehmann ◽  
Dominik Kriegner ◽  
Reza R. Zamani ◽  
Kimberly A. Dick ◽  
...  
Keyword(s):  
Bragg Peak ◽  
Stacking Faults ◽  
Growth Direction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterson Function ◽  
Transmission Electron ◽  
Gaas Nanowires ◽  
Gaas Nanowire

Coherent X-ray diffraction was used to measure the type, quantity and the relative distances between stacking faults along the growth direction of two individual wurtzite GaAs nanowires grown by metalorganic vapour epitaxy. The presented approach is based on the general property of the Patterson function, which is the autocorrelation of the electron density as well as the Fourier transformation of the diffracted intensity distribution of an object. Partial Patterson functions were extracted from the diffracted intensity measured along the [000\bar{1}] direction in the vicinity of the wurtzite 00\bar{1}\bar{5} Bragg peak. The maxima of the Patterson function encode both the distances between the fault planes and the type of the fault planes with the sensitivity of a single atomic bilayer. The positions of the fault planes are deduced from the positions and shapes of the maxima of the Patterson function and they are in excellent agreement with the positions found with transmission electron microscopy of the same nanowire.

Sn-Catalyzed Growth of MgO Nanowires

2007 ◽  
Vol 7 (12) ◽  
pp. 4434-4438 ◽  
Author(s):  
Hyoun Woo Kim ◽  
Seung Hyun Shim ◽  
Jong Woo Lee
Keyword(s):  
Electron Microscopy ◽  
Thermal Evaporation ◽  
Light Emission ◽  
X Ray Diffraction ◽  
Vapor Liquid Solid ◽  
X Ray ◽  
Transmission Electron ◽  
Fabrication And Characterization ◽  
Visible Light Emission

We reported the fabrication and characterization of MgO nanowires, which were grown by thermal evaporation of the mixture of MgB2 and Sn powders at 800 °C through a vapor-liquid-solid (VLS) process. We characterized as-synthesized MgO nanowires using X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. Sn nanoparticles were located at the tips of the nanowires, serving as catalyst for the growth of MgO nanowires. The produced nanowires were of cubic MgO structures with diameters in the range of 10–170 nm. The PL measurement with a Gaussian fitting exhibited visible light emission bands centered at 403, 576, and 720 nm.

Fabrication of SnS2 Flower Like Nanoflake Assemblies Through Thermal Evaporation

2007 ◽  
Vol 7 (12) ◽  
pp. 4540-4545 ◽  
Author(s):  
Subhajit Biswas ◽  
Soumitra Kar ◽  
Tandra Ghoshal ◽  
Subhadra Chaudhuri
Keyword(s):  
Thermal Evaporation ◽  
Growth Direction ◽  
Vapor Concentration ◽  
X Ray Diffraction ◽  
Electron Microscopic ◽  
X Ray ◽  
Raman Spectroscopic ◽  
Transmission Electron ◽  
Scanning Electron Microscopic ◽  
The Individual

Uniform as well as flower like patterns of SnS2 nanoflakes were produced by a thermal evaporation process. Interpenetrating phenomenon was observed between the individual nanoflakes during the course of their lateral growth. The interpenetrating growth and controlled vapor concentration as well as the substrate temperature leads to the formation of flower like assemblies of SnS2 nanoflakes. Morphology and growth mechanism of the nanostructures were studied by scanning electron microscopic observations at different stages of the nanoflake growth. The produced nanoflakes were characterized by X-ray diffraction, scanning and transmission electron microscopy, and Raman spectroscopic measurements. SnS2 nanoflakes were perfectly single crystalline and growth direction of the nanoflakes was along the {101}-lattice plane.

scholarly journals Synthesis and Characterization of ZnTe Hierarchical Nanostructures

2012 ◽  
Vol 2012 ◽  
pp. 1-5
Author(s):  
Baohua Zhang ◽  
Fuqiang Guo ◽  
Wei Wang
Keyword(s):  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
X Ray Diffraction ◽  
Green Luminescence ◽  
Hierarchical Nanostructures ◽  
X Ray ◽  
Transmission Electron ◽  
Scanning Electron Microcopy

Single-crystalline ZnTe hierarchical nanostructures have been successfully synthesized by a simple thermal evaporation technology. The as-prepared products were characterized with X-ray diffraction (XRD), scanning electron microcopy (SEM), transmission electron microscope (TEM), and photoluminescence spectrum (PL). These results showed that the ZnTe hierarchical nanostructures consisted of nanowires and nanolumps. The room temperature PL spectrum exhibited a pure green luminescence centered at 545nm. The growth mechanism of hierarchical nanostructure was also discussed.

scholarly journals Growth and Characterization of Ni Nano-Micro Structures in the Presence of Ethylenediamine

Crystals ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 397 ◽  
Author(s):  
Lingxiao Chen ◽  
Hang Liu ◽  
Linghao Liu ◽  
Yifan Zheng ◽  
Haodong Tang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alkaline Conditions ◽  
Naoh Solution ◽  
Micro Structures ◽  
Scanning Electron

Ni nano-micro structures have been synthesized via a solution reduction route in the presence of ethylenediamine (EDA) under strong alkaline conditions. The phase composition, morphology, and microstructure of the resulting products are investigated by X-ray diffraction, scanning electron microscopy, and transmission electron microscopy. The presence of EDA plays an important role in the formation of Ni nano-micro structures, and microflowers or microspheres assembled from nanosized horns can be produced by changing the amount of EDA. The size of Ni nano-micro structures is dependent on the NaOH concentration, and long chains assembled from Ni nano-micro structured microspheres can be obtained by reducing the amount of NaOH solution used. The role of both EDA and NaOH in the reduction of Ni (II) to Ni, as well as in the growth of Ni nano-micro structures, has been discussed, and a possible formation mechanism of these Ni nano-micro structures has been proposed based on the experimental results.

Structural Characterization of GaN Nanowires Fabricated via Direct Reaction of Ga Vapor and Ammonia

2001 ◽  
Vol 675 ◽  
Author(s):  
R.N. Jacobs ◽  
L. Salamanca-Riba ◽  
M. He ◽  
G.L. Harris ◽  
P. Zhou ◽  
...  
Keyword(s):  
Large Scale ◽  
Critical Role ◽  
Compositional Analysis ◽  
Direct Reaction ◽  
X Ray Diffraction ◽  
Growth Technique ◽  
X Ray ◽  
Gan Nanowires ◽  
Transmission Electron

ABSTRACTWe report structural studies of large-scale wurtzite GaN nanowires fabricated by direct reaction of Ga vapor and NH3. This recently reported growth technique [1] demonstrates processing of GaN one-dimensional structures as thin as 26 nm and up to 500 μm in length. This method is both interesting and attractive in that fabrication is carried out without the assistance of template materials as required by other methods. In this study, transmission electron microscopy (TEM) is used to characterize the nanowires, while x-ray diffraction (XRD) and energy dispersive x-ray spectroscopy (EDS) data provide supporting structural/compositional analysis. Our structural investigation reveals the presence of thin hexagonal platelets, which we believe play a critical role in the nucleation, growth, and orientation of the wires. In particular, our findings indicate that most of the wires grow along the [2110] direction, normal to the platelet edges.

Growth and Characterization of Ga2O3 Nanoribbons and Nanosheets

2006 ◽  
Vol 517 ◽  
pp. 53-56
Author(s):  
Hyoun Woo Kim
Keyword(s):  
Electron Microscopy ◽  
Gallium Oxide ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Zno Powders ◽  
Evaporation Technique

We have studied on the use of a GaN powders for growing gallium oxide (Ga2O3) nanoribbons and nanosheets by the thermal evaporation technique. We used x-ray diffraction, scanning electron microscopy, and transmission electron microscopy to characterize the samples. The results showed that the produced Ga2O3 nanomaterials had single crystalline monoclinic structures. The proportion of wider nanoribbons or nanosheets to nanoribbons increased by increasing the growth temperature and by employing the mixture of GaN and ZnO powders.

The Use of Advanced Analytical Techniques for Characterization of the Chemical, Physical, and Crystallographic Nature of a Surface

1973 ◽  
Vol 31 ◽  
pp. 132-133 ◽  
Author(s):  
R. E. Herfert
Keyword(s):  
Surface Characterization ◽  
Analytical Techniques ◽  
X Ray Diffraction ◽  
Depth Of Penetration ◽  
X Ray ◽  
The Past ◽  
Transmission Electron ◽  
Scanning Electron

Studies of the nature of a surface, either metallic or nonmetallic, in the past, have been limited to the instrumentation available for these measurements. In the past, optical microscopy, replica transmission electron microscopy, electron or X-ray diffraction and optical or X-ray spectroscopy have provided the means of surface characterization. Actually, some of these techniques are not purely surface; the depth of penetration may be a few thousands of an inch. Within the last five years, instrumentation has been made available which now makes it practical for use to study the outer few 100A of layers and characterize it completely from a chemical, physical, and crystallographic standpoint. The scanning electron microscope (SEM) provides a means of viewing the surface of a material in situ to magnifications as high as 250,000X.

Detonation Synthesis of Nano-Size Materials

1995 ◽  
Vol 418 ◽  
Author(s):  
J. Forbes ◽  
J. Davis ◽  
C. Wong
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Nucleation And Growth ◽  
Detonation Synthesis ◽  
X Ray Diffraction ◽  
Crystalline Materials ◽  
X Ray ◽  
Transmission Electron ◽  
Nano Size

AbstractThe detonation of explosives typically creates 100's of kbar pressures and 1000's K temperatures. These pressures and temperatures last for only a fraction of a microsecond as the products expand. Nucleation and growth of crystalline materials can occur under these conditions. Recovery of these materials is difficult but can occur in some circumstances. This paper describes the detonation synthesis facility, recovery of nano-size diamond, and plans to synthesize other nano-size materials by modifying the chemical composition of explosive compounds. The characterization of nano-size diamonds by transmission electron microscopy and electron diffraction, X-ray diffraction and Raman spectroscopy will also be reported.

One Step Synthesis and Characterization of Zirconia-Graphene Composites

2012 ◽  
Vol 600 ◽  
pp. 174-177 ◽  
Author(s):  
Jian Fei Xia ◽  
Zong Hua Wang ◽  
Yan Zhi Xia ◽  
Fei Fei Zhang ◽  
Fu Qiang Zhu ◽  
...  
Keyword(s):  
Synthesis And Characterization ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
X Ray ◽  
Graphene Composite ◽  
Transmission Electron ◽  
One Step ◽  
Ft Ir ◽  
Xrd Techniques

Zirconia-graphene composite (ZrO2-G) has been successfully synthesized via decomposition of ZrOCl2•6H2O in a water-isopropanol system with dispersed graphene oxide (GO) utilizing Na2S as a precursor could enable the occurrence of the deposition of Zr4+ and the deoxygenation of GO at the same time. Transmission electron microscopy (TEM), Fourier transform infrared spectroscopy (FT-IR) and X-ray diffraction (XRD) techniques were used to characterize the samples. It was found that graphene were fully coated with ZrO2, and the ZrO2 existing in tetragonal phase, which resulted in the formation of two-dimensional composite.

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