Photo and photoelectrochemical properties of p-type low-temperature dehydrated nanotube titanic acid

2006 ◽  
Vol 8 (5) ◽  
pp. 741-746 ◽  
Author(s):  
Q LI ◽  
J ZHANG ◽  
Z JIN ◽  
D YANG ◽  
X WANG ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoelectrochemical Properties ◽  
Nanotube Titanic Acid ◽  
P Type

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

Annealing effect on the optical and photoelectrochemical properties of lead oxide

2018 ◽  
Vol 84 (3) ◽  
pp. 30301 ◽  
Author(s):  
Wided Zerguine ◽  
Djamila Abdi ◽  
Farid Habelhames ◽  
Meriem Lakhdari ◽  
Hassina Derbal-Habak ◽  
...  
Keyword(s):  
Lead Oxide ◽  
Orthorhombic Phase ◽  
Heat Treatments ◽  
Photoelectrochemical Properties ◽  
X Ray Diffraction ◽  
Vis Spectroscopy ◽  
Size And Morphology ◽  
Two Phases ◽  
P Type ◽  
The Relationship

Effect of the annealing oxidation time of electrodeposited lead (Pb) on the phase formation of lead oxide (PbO) films is reported. The phase structure, optical properties, size and morphology of the films were investigated by scanning electron microscopy, X-ray diffraction and UV-vis spectroscopy. The relationship between structur and photoelectrochemical properties was investigated. Thin films of PbO produced via air annealing of electrodeposited lead consist of a mixture of two phases, orthorhombic (o-PbO) and tetragonal (t-PbO), that determine the material properties and effectiveness as absorber layer in a photoelectrochemical device. The proportion of tetragonal t-PbO increases for longer heat treatments. After 40 h, the sample consists mainly of tetragonal t-PbO. The p-type semiconducting behavior of lead oxide was studied by photocurrent measurements. Different heat treatments yield variations in the ratio of tetragonal to orthorhombic lead oxide that effect on device performances, where devices with a higher content of tetragonal t-PbO show higher photocurrent than with the orthorhombic phase.

Sticky thermoelectric materials for flexible thermoelectric modules to capture low-temperature waste heat

MRS Advances ◽  
2020 ◽  
Vol 5 (10) ◽  
pp. 481-487 ◽  
Author(s):  
Norifusa Satoh ◽  
Masaji Otsuka ◽  
Yasuaki Sakurai ◽  
Takeshi Asami ◽  
Yoshitsugu Goto ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Low Temperature ◽  
Waste Heat ◽  
Air Cooling ◽  
Conductive Adhesives ◽  
Hot Plate ◽  
Low Thermal Conductivity ◽  
Te Modules ◽  
P Type ◽  
Flexible Thermoelectric

ABSTRACTWe examined a working hypothesis of sticky thermoelectric (TE) materials, which is inversely designed to mass-produce flexible TE sheets with lamination or roll-to-roll processes without electric conductive adhesives. Herein, we prepared p-type and n-type sticky TE materials via mixing antimony and bismuth powders with low-volatilizable organic solvents to achieve a low thermal conductivity. Since the sticky TE materials are additionally injected into punched polymer sheets to contact with the upper and bottom electrodes in the fabrication process, the sticky TE modules of ca. 2.4 mm in thickness maintained temperature differences of ca. 10°C and 40°C on a hot plate of 40 °C and 120°C under a natural-air cooling condition with a fin. In the single-cell resistance analysis, we found that 75∼150-µm bismuth powder shows lower resistance than the smaller-sized one due to the fewer number of particle-particle interfaces in the electric pass between the upper and bottom electrodes. After adjusting the printed wiring pattern for the upper and bottom electrodes, we achieved 42 mV on a hot plate (120°C) with the 6 x 6 module having 212 Ω in the total resistance. In addition to the possibility of mass production at a reasonable cost, the sticky TE materials provide a low thermal conductivity for flexible TE modules to capture low-temperature waste heat under natural-air cooling conditions with fins for the purpose of energy harvesting.

Photoelectrochemical properties of CdSe quantum dot sensitized p-type flower-like NiO solar cells with different deposition layer

2016 ◽  
Vol 84 ◽  
pp. 212-217 ◽  
Author(s):  
Xiaowei Li ◽  
Ruixue Chen ◽  
Huidong Sui ◽  
Xiaoxian Yuan ◽  
Meng Li ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photoelectrochemical Properties ◽  
Cdse Quantum Dot ◽  
P Type

scholarly journals Enhanced photoelectroctatlytic performance of etched 3C–SiC thin film for water splitting under visible light

RSC Advances ◽  
2014 ◽  
Vol 4 (97) ◽  
pp. 54441-54446 ◽  
Author(s):  
Yazhou Wang ◽  
Sheng Li ◽  
Jisheng Han ◽  
William Wen ◽  
Hao Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Visible Light ◽  
Water Splitting ◽  
P Type

A low temperature alternating supply epitaxy grown p-type 3C–SiC thin film is further etched to enhance the photoelectrocatalytic performance.

Low-temperature p-type ohmic contact to WSe2 using p+-MoS2/WSe2 van der Waals interface

2020 ◽  
Vol 117 (15) ◽  
pp. 153101
Author(s):  
Kei Takeyama ◽  
Rai Moriya ◽  
Kenji Watanabe ◽  
Satoru Masubuchi ◽  
Takashi Taniguchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ohmic Contact ◽  
Van Der Waals ◽  
P Type

Low temperature processed p-type bottom gate microcrystalline silicon thin film transistors

2010 ◽  
pp. NA-NA
Author(s):  
O. Moustapha ◽  
A. Abramov ◽  
D. Daineka ◽  
M. Oudwan ◽  
Y. Bonnassieux ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Microcrystalline Silicon ◽  
Silicon Thin Film ◽  
P Type ◽  
Bottom Gate
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