scholarly journals Optimal drift region for diamond power devices

2016 ◽  
Vol 69 ◽  
pp. 68-73 ◽  
Author(s):  
Gauthier Chicot ◽  
David Eon ◽  
Nicolas Rouger
Keyword(s):  
Drift Region ◽  
Power Devices

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

Analytical models of lateral power devices with arbitrary vertical doping profiles in the drift region

2013 ◽  
Vol 22 (5) ◽  
pp. 058501 ◽  
Author(s):  
Ting-Ting Hua ◽  
Yu-Feng Guo ◽  
Ying Yu ◽  
Gene Sheu ◽  
Tong Jian ◽  
...  
Keyword(s):  
Analytical Models ◽  
Drift Region ◽  
Power Devices ◽  
Doping Profiles

Modeling of power devices with drift region integrated microchannel cooler

2013 ◽  
Vol 44 (11) ◽  
pp. 994-1004 ◽  
Author(s):  
Kremena Vladimirova ◽  
Yvan Avenas ◽  
Jean-Christophe Crebier ◽  
Christian Schaeffer ◽  
Fabien Lebouc ◽  
...  
Keyword(s):  
Drift Region ◽  
Power Devices

Theoretical Analysis of Dielectric Modulated Drift Region for Si Power Devices

2015 ◽  
Vol 36 (4) ◽  
pp. 378-380 ◽  
Author(s):  
Jiuyang Zhou ◽  
Chih-Fang Huang ◽  
Yen-Hsin Chen
Keyword(s):  
Theoretical Analysis ◽  
Drift Region ◽  
Power Devices

scholarly journals Design of Diamond Power Devices: Application to Schottky Barrier Diodes

Energies ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 2387
Author(s):  
Nicolas Rouger ◽  
Aurélien Maréchal
Keyword(s):  
Optimal Design ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
Hole Mobility ◽  
Analytical Models ◽  
Drift Region ◽  
Schottky Barrier Diodes ◽  
Power Devices

Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents the ultimate semiconductor for high power and high temperature power applications. Diamond Schottky barrier diodes are good candidates for short-term implementation in power converters due to their relative maturity. Nonetheless, diamond as a semiconductor for power devices leads to specificities such as incomplete dopant ionization at room temperature and above, and the limited availability of implantation techniques. This article presents such specificities and their impacts on the optimal design of diamond Schottky barrier diodes. First, the tradeoff between ON-state and OFF-state is discussed based on 1D analytical models. Then, 2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage. Both analyses show that the doping of the drift region must be reduced to reduce leakage currents and to increase edge termination efficiency, leading to better figures of merit. The obtained improvements in breakdown voltage are compared with fabrication challenges and the impacts on forward voltage drop.

Effects Of Drift Region Breakdown Voltage Power Devices

2012 ◽  
Vol 4 (18) ◽  
pp. 160-168
Author(s):  
HsinChiang You ◽  
ChengYen Wu ◽  
YuHsien Lin ◽  
WenLuh Yang
Keyword(s):  
Breakdown Voltage ◽  
Drift Region ◽  
Power Devices

Super Field Plate Technique That Can Provide Charge Balance Effect for Lateral Power Devices Without Occupying Drift Region

2020 ◽  
Vol 67 (5) ◽  
pp. 2218-2222
Author(s):  
Chunwei Zhang ◽  
Haijun Guo ◽  
Zhenxiang Chen ◽  
Wenjing Yue ◽  
Yang Li ◽  
...  
Keyword(s):  
Drift Region ◽  
Charge Balance ◽  
Power Devices ◽  
Field Plate ◽  
Plate Technique

Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)

2006 ◽  
Vol 527-529 ◽  
pp. 1453-1456 ◽  
Author(s):  
Tetsuya Hayashi ◽  
Yoshio Shimoida ◽  
Hideaki Tanaka ◽  
Shigeharu Yamagami ◽  
Satoshi Tanimoto ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Polycrystalline Silicon ◽  
Current Flow ◽  
Source Region ◽  
Tunneling Current ◽  
Channel Length ◽  
Drift Region ◽  
Gate Bias ◽  
Power Devices ◽  
Channel Mobility

We demonstrate a novel power Si/4H-SiC heterojunction tunneling transistor (HETT) on the basis of theoretical analysis and experimental results. The HETT is an insulated gate drive device and has a unique switching mechanism. In the off-state, the heterojunction barrier prevents current flow between the Si source region and the 4H-SiC drift region. In the on-state, the width of the heterojunction barrier is controlled by the gate bias to allow tunneling current to flow. The HETT has a zero channel length structure that is more independent of channel mobility compared with a conventional 4H-SiC MOSFET. As a result, the HETT is expected to have low on-resistance. A HETT was fabricated with n+-type polycrystalline silicon on an n--type 4H-SiC epitaxial wafer for power devices. The fabricated HETT shows a low specific on-resistance of 6.8 mcm2 (at Jd=500 A/cm2).

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