Effects Of Drift Region Breakdown Voltage Power Devices

2012 ◽  
Vol 4 (18) ◽  
pp. 160-168
Author(s):  
HsinChiang You ◽  
ChengYen Wu ◽  
YuHsien Lin ◽  
WenLuh Yang
Keyword(s):  
Breakdown Voltage ◽  
Drift Region ◽  
Power Devices

scholarly journals Design of Diamond Power Devices: Application to Schottky Barrier Diodes

Energies ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 2387
Author(s):  
Nicolas Rouger ◽  
Aurélien Maréchal
Keyword(s):  
Optimal Design ◽  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
Hole Mobility ◽  
Analytical Models ◽  
Drift Region ◽  
Schottky Barrier Diodes ◽  
Power Devices

Owing to its outstanding electro-thermal properties, such as the highest thermal conductivity (22 W/(cm∙K) at room temperature), high hole mobility (2000 cm2/(V∙s)), high critical electric field (10 MV/cm) and large band gap (5.5 eV), diamond represents the ultimate semiconductor for high power and high temperature power applications. Diamond Schottky barrier diodes are good candidates for short-term implementation in power converters due to their relative maturity. Nonetheless, diamond as a semiconductor for power devices leads to specificities such as incomplete dopant ionization at room temperature and above, and the limited availability of implantation techniques. This article presents such specificities and their impacts on the optimal design of diamond Schottky barrier diodes. First, the tradeoff between ON-state and OFF-state is discussed based on 1D analytical models. Then, 2D numerical studies show the optimal design of floating metal rings to improve the effective breakdown voltage. Both analyses show that the doping of the drift region must be reduced to reduce leakage currents and to increase edge termination efficiency, leading to better figures of merit. The obtained improvements in breakdown voltage are compared with fabrication challenges and the impacts on forward voltage drop.

High Voltage Silicon Carbide Devices

1998 ◽  
Vol 512 ◽  
Author(s):  
B. Jayant Baliga
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Impact Ionization ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Inversion Layer ◽  
Drift Region ◽  
Edge Termination ◽  
Silicon Devices

ABSTRACTProgress made in the development of high performance power rectifiers and switches from silicon carbide are reviewed with emphasis on approaching the 100-fold reduction in the specific on-resistance of the drift region when compared with silicon devices with the same breakdown voltage. The highlights are: (a) Recently completed measurements of impact ionization coefficients in SiC indicate an even higher Baliga's figure of merit than projected earlier. (b) The commonly reported negative temperature co-efficient for breakdown voltage in SiC devices has been shown to arise at defects, allaying concerns that this may be intrinsic to the material. (c) Based upon fundamental considerations, it has been found that Schottky rectifiers offer superior on-state voltage drop than P-i-N rectifiers for reverse blocking voltages below 3000 volts. (d) Nearly ideal breakdown voltage has been experimentally obtained for Schottky diodes using an argon implanted edge termination. (e) Planar ion-implanted junctions have been successfully fabricated using oxide as a mask with high breakdown voltage and low leakage currents by using a filed plate edge termination. (f) High inversion layer mobility has been experimentally demonstrated on both 6H and 4H-SiC by using a deposited oxide layer as gate dielectric. (g) A novel, high-voltage, normally-off, accumulation-channel, MOSFET has been proposed and demonstrated with 50x lower specific on-resistance than silicon devices in spite of using logic-level gate drive voltages. These results indicate that SiC based power devices could become commercially viable in the 21st century if cost barriers can be overcome.

scholarly journals The Optimal Design of Trench Field Rings for High Breakdown Voltage

2011 ◽  
Vol 2-3 ◽  
pp. 1047-1050
Author(s):  
Ey Goo Kang ◽  
Sung Young Hong ◽  
Byoung Sub Ahn
Keyword(s):  
Optimal Design ◽  
Breakdown Voltage ◽  
Power Devices ◽  
High Breakdown Voltage ◽  
Process Simulations ◽  
Trench Width ◽  
Conventional Field

The trench field ring for breakdown voltage of power devices is proposed. The new ring can improve 10% efficiency comparing with conventional field ring. Five parameters of trench field ring for design of trench field ring are analyzed and 2-D devices simulation and process simulations are carried out. The number of field ring, juction depth, distance of field rings, trench width, doping profiled are discussed. The proposed trench field ring was better for higher voltage more than 1000V.

scholarly journals Electrostatic-Discharge-Immunity Impacts in 300 V nLDMOS by Comprehensive Drift-Region Engineering

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1469 ◽  
Author(s):  
Po-Lin Lin ◽  
Shen-Li Chen ◽  
Sheng-Kai Fan
Keyword(s):  
Integrated Circuits ◽  
Oxide Layer ◽  
Breakdown Voltage ◽  
Electrostatic Discharge ◽  
Reference Group ◽  
Lateral Diffusion ◽  
Oxide Semiconductor ◽  
Drift Region ◽  
Field Oxide ◽  
Latch Up

Electrostatic discharge (ESD) events are the main factors impacting the reliability of Integrated circuits (ICs); therefore, the ESD immunity level of these ICs is an important index. This paper focuses on comprehensive drift-region engineering for ultra-high-voltage (UHV) circular n-channel lateral diffusion metal-oxide-semiconductor transistor (nLDMOS) devices used to investigate impacts on ESD ability. Under the condition of fixed layout area, there are four kinds of modulation in the drift region. First, by floating a polysilicon stripe above the drift region, the breakdown voltage and secondary breakdown current of this modulation can be increased. Second, adjusting the width of the field-oxide layer in the drift region when the width of the field-oxide layer is 5.8 μm will result in the minimum breakdown voltage (105 V) but the best secondary breakdown current (6.84 A). Third, by adjusting the discrete unit cell and its spacing, the corresponding improved trigger voltage, holding voltage, and secondary breakdown current can be obtained. According to the experimental results, the holding voltage of all devices under test (DUTs) is greater than that of the reference group, so the discrete HV N-Well (HVNW) layer can effectively improve its latch-up immunity. Finally, by embedding different P-Well lengths, the findings suggest that when the embedded P-Well length is 9 μm, it will have the highest ESD ability and latch-up immunity.

Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1449-1452 ◽  
Author(s):  
Yang Sui ◽  
Ginger G. Walden ◽  
Xiao Kun Wang ◽  
James A. Cooper
Keyword(s):  
High Voltage ◽  
Current Density ◽  
Drift Region ◽  
Power Devices ◽  
Power Switching ◽  
Design Considerations ◽  
Blocking Voltage ◽  
Switching Devices

We compare the on-state characteristics of five 4H-SiC power devices designed to block 20 kV. At such a high blocking voltage, the on-state current density depends heavily on the degree of conductivity modulation in the drift region, making the IGBT and thyristor attractive devices for high blocking voltages.

Breakdown voltage modeling in mesa power devices

1983 ◽  
Vol 75 (1) ◽  
pp. 207-217 ◽  
Author(s):  
J. P. Gourret ◽  
J. Paille
Keyword(s):  
Breakdown Voltage ◽  
Power Devices

Doping Concentration Optimization for Ultra-Low-Loss 4H-SiC Floating Junction Schottky Barrier Diode (Super-SBD)

2009 ◽  
Vol 615-617 ◽  
pp. 655-658 ◽  
Author(s):  
Chiharu Ota ◽  
Johji Nishio ◽  
Kazuto Takao ◽  
Tetsuo Hatakeyama ◽  
Takashi Shinohe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Breakdown Voltage ◽  
Dynamic Characteristics ◽  
Figure Of Merit ◽  
Doping Concentration ◽  
Drift Region ◽  
Static Characteristics ◽  
Low Loss ◽  
Significant Lowering ◽  
Floating Layer

Previous simulation works and experiments on the loss of 4H-SiC floating junction Schottky barrier diodes (Super-SBDs) show that the loss is related to the doping concentration in the drift region and the pattern of the floating layer. The effect of the doping concentration for lowering the loss is characterized the breakdown voltage (Vbd) and the on-state resistances (RonS) of the Super-SBDs based on Baliga’s figure of Merit (BFOM). Experimental devices with two doping concentrations in the drift region are fabricated to investigate the static characteristics: Vbd and RonS. The Vbd of the Super-SBDs is close to the simulation result, near 3000 V. However the tendency of the Vbd by the doping concentration is not similar to the simulation result. And the RonS are about 3.22 mcm2 which is higher than that of simulation result. The doping concentration optimized in this study does not show significant lowering loss and the design of the floating layer in the termination region affect the low-loss static characteristics of the Super-SBD. In addition, adopting PiN structure with floating layer (Super-PiN) affects the low-loss dynamic characteristics, optimizing the doping concentration in the drift region. We conclude that the fabricated Super-SBDs with the floating layer in the termination region, the drift region with a doping concentration of 1.01016 cm-3 and mesa-shaped termination structure, have excellent Vbd of 2990 V which is almost same as that of simulation result and RonS of 3.22 mcm2.

Sign in / Sign up

Export Citation Format

Share Document