Hysteresis loops and dielectric properties of compositionally graded (Ba,Sr)TiO 3 thin films described by the transverse Ising model

2016 ◽  
Vol 54 (4) ◽  
pp. 533-544 ◽  
Author(s):  
Y. Benhouria ◽  
I. Essaoudi ◽  
A. Ainane ◽  
R. Ahuja ◽  
F. Dujardin
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Ising Model ◽  
Hysteresis Loops ◽  
Transverse Ising Model

Effect of Film Thickness on Structure and Property of Pb(Zr0.53Ti0.47)O3 Thin Film

2010 ◽  
Vol 150-151 ◽  
pp. 112-117 ◽  
Author(s):  
Min Xian Shi ◽  
Wei Mao ◽  
Yan Qin ◽  
Zhi Xiong Huang ◽  
Dong Yun Guo
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Film Thickness ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Xrd Analysis ◽  
Structure And Property ◽  
Si Substrates ◽  
Sol Gel Process ◽  
Ferroelectric Hysteresis

Pb(Zr0.53Ti0.47)O3 thin films with thickness of 120nm, 190nm, 310nm, 440nm and 630nm were deposited on Pt/Ti/SiO2/Si substrates by sol-gel process through repeating spining process 2 times, 4 times, 6 times, 8 times and 10 times respectively. The structures of PZT films were investigated by SEM and XRD analysis. The ferroelectric hysteresis loops were recorded by Radiant Precision Workstation and dielectric properties were measured using an Agilent HP4294A impedance analyzer. X-ray diffraction indicated that with the film thickness increasing, the diffraction intensity increased. The thickness of PZT film had great effect on ferroelectric and dielectric properties. Conclusively when the film thickness was about 310nm, the PZT thin films possessed better ferroelectric and dielectric properties.

ION DOPING EFFECTS ON THE DIELECTRIC AND PHONON PROPERTIES OF (Ba, Sr)TiO3 THIN FILMS

2011 ◽  
Vol 25 (25) ◽  
pp. 3289-3301 ◽  
Author(s):  
J. M. WESSELINOWA
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Ising Model ◽  
Exchange Interactions ◽  
Function Technique ◽  
Transverse Ising Model ◽  
Bst Thin Films ◽  
Doping Effects ◽  
Ion Doping ◽  
Phonon Properties

The exact mechanism by which doping ions change the properties in (BST) thin films is not fully understood. We have shown based ( Ba , Sr ) TiO 3 on the transverse Ising model including anharmonic spin–phonon interactions and using a Green's function technique that the dielectric constant and the phonon properties can be changed due to different exchange interactions between the doping ions and the host ions in BST thin films. They are highly dependent upon the magnitude and the kind of the stress (tensile or compressive) due to the different radii of the doping ions. The phonon energies can be larger or smaller for different doping ions, whereas their damping is always enhanced.

Polarization properties of ferroelectric thin films on transverse ising model

2008 ◽  
Vol 245 (11) ◽  
pp. 2599-2604 ◽  
Author(s):  
Punan Sun ◽  
Tianquan Lü ◽  
Hui Chen ◽  
Wenwu Cao
Keyword(s):  
Thin Films ◽  
Ising Model ◽  
Ferroelectric Thin Films ◽  
Transverse Ising Model

The Investigations of Dielectric Properties of BaTiO3 Thin Films on Polycrystalline Pt Substrates by Rf Magnetron Sputtering

1996 ◽  
Vol 433 ◽  
Author(s):  
Jin Wook Jang ◽  
Woon Jo Cho ◽  
Taek Sang Hahn ◽  
Sang Sam Choi ◽  
Su Jin Chung
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Room Temperature ◽  
Strong Dependence ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Thickness Dependence ◽  
Grain Sizes

AbstractThickness dependence of ferroelectric and structural properties of BaTiO3 thin films were investigated. Stoichiometric BaTiO3 thin films were prepared by off-axis rf magnetron sputtering on polycrystalline Pt substrates at 700°C. Film thickness range was 2,100–20,000Å. Room temperature permittivity, frequency dependence of permittivity, and D-E hysteresis loops were measured and lattice parameters were determined as a function of the film thickness. It has been found that these properties had the strong dependence on film thickness, which was mainly due to grain sizes of BaTiO3 thin films. The main cause of thickness dependence of dielectric properties was thought to be crystallinity and stresses of thin films which is resulted from changes in grain sizes.

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