scholarly journals Order–disorder phase transitions in thin films described by transverse Ising model

2016 ◽  
Vol 1 (4) ◽  
pp. 531-535 ◽  
Author(s):  
Nguyen Tu Niem ◽  
Bach Huong Giang ◽  
Bach Thanh Cong
1993 ◽  
Vol 47 (2) ◽  
pp. 827-830 ◽  
Author(s):  
Xue-Fan Jiang ◽  
Jia-Liang Li ◽  
Jia-lin Zhong ◽  
Chuan-Zhang Yang

2011 ◽  
Vol 25 (25) ◽  
pp. 3289-3301 ◽  
Author(s):  
J. M. WESSELINOWA

The exact mechanism by which doping ions change the properties in (BST) thin films is not fully understood. We have shown based ( Ba , Sr ) TiO 3 on the transverse Ising model including anharmonic spin–phonon interactions and using a Green's function technique that the dielectric constant and the phonon properties can be changed due to different exchange interactions between the doping ions and the host ions in BST thin films. They are highly dependent upon the magnitude and the kind of the stress (tensile or compressive) due to the different radii of the doping ions. The phonon energies can be larger or smaller for different doping ions, whereas their damping is always enhanced.


2008 ◽  
Vol 245 (11) ◽  
pp. 2599-2604 ◽  
Author(s):  
Punan Sun ◽  
Tianquan Lü ◽  
Hui Chen ◽  
Wenwu Cao

2002 ◽  
Vol 66 (6) ◽  
Author(s):  
Paulo R. Colares Guimarães ◽  
João A. Plascak ◽  
Francisco C. Sá Barreto ◽  
João Florencio

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