Polarization properties of ferroelectric thin films on transverse ising model

2008 ◽  
Vol 245 (11) ◽  
pp. 2599-2604 ◽  
Author(s):  
Punan Sun ◽  
Tianquan Lü ◽  
Hui Chen ◽  
Wenwu Cao
2011 ◽  
Vol 25 (25) ◽  
pp. 3289-3301 ◽  
Author(s):  
J. M. WESSELINOWA

The exact mechanism by which doping ions change the properties in (BST) thin films is not fully understood. We have shown based ( Ba , Sr ) TiO 3 on the transverse Ising model including anharmonic spin–phonon interactions and using a Green's function technique that the dielectric constant and the phonon properties can be changed due to different exchange interactions between the doping ions and the host ions in BST thin films. They are highly dependent upon the magnitude and the kind of the stress (tensile or compressive) due to the different radii of the doping ions. The phonon energies can be larger or smaller for different doping ions, whereas their damping is always enhanced.


2021 ◽  
Vol 1730 (1) ◽  
pp. 012041
Author(s):  
E V Menshikov ◽  
O G Maksimova ◽  
S V Osipov ◽  
A V Maksimov

1997 ◽  
Vol 197 (1) ◽  
pp. 39-42 ◽  
Author(s):  
Jianshe Liu ◽  
Xtngjiao Li ◽  
Jianhong Zhao ◽  
Longbo Huang ◽  
Xin Huang ◽  
...  

2003 ◽  
Vol 17 (25) ◽  
pp. 1343-1347 ◽  
Author(s):  
J. M. WESSELINOWA ◽  
S. TRIMPER

The polarization and susceptibility of thin antiferroelectric films are presented using a Green's function technique within an Ising model in a transverse field. Both quantities vary with the numbers of layers. Whereas at low temperatures the suceptibilty of the surface layer increases stronger than that of the second layer, the polarization of the surface is smaller compared to the polarization of the second layer. Such behavior has no counterpart in ferroelectric thin films. The effect is attributed to inhomogeneous thermal fluctuations.


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