Modeling and control of Transparent Conducting Oxide layer surface morphology for improved light trapping

2012 ◽  
Vol 74 ◽  
pp. 135-147 ◽  
Author(s):  
Jianqiao Huang ◽  
Gerassimos Orkoulas ◽  
Panagiotis D. Christofides
Keyword(s):  
Surface Morphology ◽  
Oxide Layer ◽  
Light Trapping ◽  
Transparent Conducting Oxide ◽  
Layer Surface ◽  
Modeling And Control ◽  
Transparent Conducting ◽  
And Control

Improved efficiency of Cu(In,Ga)Se 2 mini‐module via high‐mobility In 2 O 3 :W,H transparent conducting oxide layer

2019 ◽  
Vol 27 (6) ◽  
pp. 491-500 ◽  
Author(s):  
Takashi Koida ◽  
Jiro Nishinaga ◽  
Yuko Ueno ◽  
Hirofumi Higuchi ◽  
Hideki Takahashi ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Transparent Conducting Oxide ◽  
High Mobility ◽  
Transparent Conducting

P-10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT-LCDs

2005 ◽  
Vol 36 (1) ◽  
pp. 261
Author(s):  
Chang-Oh Jeong ◽  
Yang-Ho Bae ◽  
Beom-Seok Cho ◽  
Je-Hun Lee ◽  
Min-Seok Oh ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting

Evaluation of different intrinsic ZnO and transparent conducting oxide layer combinations in Cu(In,Ga)Se 2 solar cells

2017 ◽  
Vol 633 ◽  
pp. 235-238 ◽  
Author(s):  
Fredrik Larsson ◽  
Jan Keller ◽  
Marika Edoff ◽  
Tobias Törndahl
Keyword(s):  
Solar Cells ◽  
Oxide Layer ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films

2009 ◽  
Vol 1153 ◽  
Author(s):  
Jorj Ian Owen ◽  
Jürgen Hüpkes ◽  
Eerke Bunte
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Light Trapping ◽  
Transparent Conducting Oxide ◽  
Window Layer ◽  
Basic Solution ◽  
Atomic Force ◽  
Transparent Conducting ◽  
Wet Chemical ◽  
Observation Method

AbstractThe transparent conducting oxide (TCO) ZnO:Al is often used as the window layer and a source of light trapping in thin-film silicon solar cells. Light scattering in sputtered zinc oxide is achieved by wet chemical etching, which results in craters distributed randomly over the ZnO surface. To gain a better understanding of the etching process on ZnO thin films, a method for atomic force microscope (AFM) realignment between etching steps is developed. Using this method, the evolution of the HCl etch on a polycrystalline ZnO thin-film is observed. Results showed that this observation method did not modify the etching behavior, nor did stopping and restarting the etching change the points of attack, indicating that the points of HCl attack are built into the films as they are grown. Additionally, we investigated the evolution of the HCl etch on a ZnO surface previously etched in KOH, and found that the etch sites for both the acidic and basic solution are identical. We conclude that “peculiar” defects, which induce accelerated etching, are built into the film during growth, and that these defects can extend part or all the way though the thin-film in a similar way as screw dislocations in single crystalline ZnO.

Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

2012 ◽  
Vol 520 (6) ◽  
pp. 2115-2118 ◽  
Author(s):  
Dae-Hyung Cho ◽  
Yong-Duck Chung ◽  
Kyu-Seok Lee ◽  
Nae-Man Park ◽  
Kyung-Hyun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Oxide Layer ◽  
Growth Temperature ◽  
Transparent Conducting Oxide ◽  
Thin Film Solar Cells ◽  
Transparent Conducting
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