Surface morphology control of Transparent Conducting Oxide layers for improved light trapping using wafer grating and feedback control

2012 ◽  
Vol 81 ◽  
pp. 191-201 ◽  
Author(s):  
Jianqiao Huang ◽  
Gerassimos Orkoulas ◽  
Panagiotis D. Christofides
Keyword(s):  
Feedback Control ◽  
Surface Morphology ◽  
Light Trapping ◽  
Transparent Conducting Oxide ◽  
Morphology Control ◽  
Oxide Layers ◽  
Transparent Conducting

Current status of transparent conducting oxide layers with high electron mobility and their application in Cu(In,Ga)Se2 mini-modules

2019 ◽  
Vol 673 ◽  
pp. 26-33 ◽  
Author(s):  
Takashi Koida ◽  
Yuko Ueno ◽  
Jiro Nishinaga ◽  
Yukiko Kamikawa ◽  
Hirofumi Higuchi ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Transparent Conducting Oxide ◽  
Current Status ◽  
High Electron ◽  
High Electron Mobility ◽  
Oxide Layers ◽  
Transparent Conducting

Observation of the Evolution of Etch Features on Polycrystalline ZnO:Al Thin-Films

2009 ◽  
Vol 1153 ◽  
Author(s):  
Jorj Ian Owen ◽  
Jürgen Hüpkes ◽  
Eerke Bunte
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Light Trapping ◽  
Transparent Conducting Oxide ◽  
Window Layer ◽  
Basic Solution ◽  
Atomic Force ◽  
Transparent Conducting ◽  
Wet Chemical ◽  
Observation Method

AbstractThe transparent conducting oxide (TCO) ZnO:Al is often used as the window layer and a source of light trapping in thin-film silicon solar cells. Light scattering in sputtered zinc oxide is achieved by wet chemical etching, which results in craters distributed randomly over the ZnO surface. To gain a better understanding of the etching process on ZnO thin films, a method for atomic force microscope (AFM) realignment between etching steps is developed. Using this method, the evolution of the HCl etch on a polycrystalline ZnO thin-film is observed. Results showed that this observation method did not modify the etching behavior, nor did stopping and restarting the etching change the points of attack, indicating that the points of HCl attack are built into the films as they are grown. Additionally, we investigated the evolution of the HCl etch on a ZnO surface previously etched in KOH, and found that the etch sites for both the acidic and basic solution are identical. We conclude that “peculiar” defects, which induce accelerated etching, are built into the film during growth, and that these defects can extend part or all the way though the thin-film in a similar way as screw dislocations in single crystalline ZnO.

Transparent conducting oxide layers for thin film silicon solar cells

2010 ◽  
Vol 518 (24) ◽  
pp. e129-e135 ◽  
Author(s):  
J.K. Rath ◽  
Y. Liu ◽  
M.M. de Jong ◽  
J. de Wild ◽  
J.A. Schuttauf ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Transparent Conducting Oxide ◽  
Silicon Solar Cells ◽  
Oxide Layers ◽  
Transparent Conducting ◽  
Thin Film Silicon

scholarly journals Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

2018 ◽  
Vol 2 (4) ◽  
Author(s):  
D. Ali ◽  
M. Z. Butt ◽  
C. Coughlan ◽  
D. Caffrey ◽  
I. V. Shvets ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting ◽  
Doped Zno
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