Improved efficiency of Cu(In,Ga)Se 2 mini‐module via high‐mobility In 2 O 3 :W,H transparent conducting oxide layer

2019 ◽  
Vol 27 (6) ◽  
pp. 491-500 ◽  
Author(s):  
Takashi Koida ◽  
Jiro Nishinaga ◽  
Yuko Ueno ◽  
Hirofumi Higuchi ◽  
Hideki Takahashi ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Transparent Conducting Oxide ◽  
High Mobility ◽  
Transparent Conducting

Development of Nano-TiO2dye sensitised solar cells on high mobility transparent conducting oxide thin films

2009 ◽  
Vol 17 (4) ◽  
pp. 265-272 ◽  
Author(s):  
J. W. Bowers ◽  
H. M. Upadhyaya ◽  
S. Calnan ◽  
R. Hashimoto ◽  
T. Nakada ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Transparent Conducting Oxide ◽  
High Mobility ◽  
Oxide Thin Films ◽  
Transparent Conducting

P-10: Mechanism of Lowering Contact Resistance between Transparent Conducting Oxide Layer and Mo/Al/Mo Layer in TFT-LCDs

2005 ◽  
Vol 36 (1) ◽  
pp. 261
Author(s):  
Chang-Oh Jeong ◽  
Yang-Ho Bae ◽  
Beom-Seok Cho ◽  
Je-Hun Lee ◽  
Min-Seok Oh ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Oxide Layer ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting

High Mobility in Nanocrystal-Based Transparent Conducting Oxide Thin Films

ACS Nano ◽  
2018 ◽  
Vol 12 (4) ◽  
pp. 3200-3208 ◽  
Author(s):  
Byung Hyo Kim ◽  
Corey M. Staller ◽  
Shin Hum Cho ◽  
Sungyeon Heo ◽  
Carrie E. Garrison ◽  
...  
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
High Mobility ◽  
Oxide Thin Films ◽  
Transparent Conducting

Evaluation of different intrinsic ZnO and transparent conducting oxide layer combinations in Cu(In,Ga)Se 2 solar cells

2017 ◽  
Vol 633 ◽  
pp. 235-238 ◽  
Author(s):  
Fredrik Larsson ◽  
Jan Keller ◽  
Marika Edoff ◽  
Tobias Törndahl
Keyword(s):  
Solar Cells ◽  
Oxide Layer ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting

Bulk Synthesis and Structural Determination of High Mobility Multication Transparent Conducting Oxides

2012 ◽  
Vol 194 ◽  
pp. 124-128 ◽  
Author(s):  
Peediyekkal Jayaram ◽  
T.P. Jaya ◽  
P.P. Pradyumnan
Keyword(s):  
Carrier Concentration ◽  
Transparent Conducting Oxide ◽  
High Mobility ◽  
Optical Transmittance ◽  
Charge Carrier Concentration ◽  
X Ray Diffraction ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
Charge Concentration ◽  
Bulk Charge

This work reports the synthesis of novel quaternary transparent conducting oxide Cd(1-x)Sn(1-x)InxGaxO3( x=0.1, 0.2, 0.3) at 1225°C via solid state reaction route. The investigations on structural, optical and electrical properties have been carried out. Powder X-ray diffraction revealed the phase purity and distorted orthorhombic structure of the species synthesized. Distortion of the structure is due to the substitution of In3+and Ga3+in CdSnO3 (JCPDS card no.340885) matrix. The optical transmittance approximated by the reflectance shows considerable increase in the transmittance of visible light along with the increase of substitution. Typical Burstein-Moss effect is observed with the increase in x value as a variation in optical bandgap from 2.7 to 2.9eV. Four point Hall measurements by Van der-Pauw method exhibit superior properties in charge carrier concentration and mobility. Maximum bulk charge concentration of 4.78x1017 cm-3is obtained for x=0.3. Hall mobility depends on carrier concentration and steeply increases with the carrier concentration. Considerable drop in the resistivity of the material along with higher transmittance is a critical finding in the experiment.

Influence of growth temperature of transparent conducting oxide layer on Cu(In,Ga)Se2 thin-film solar cells

2012 ◽  
Vol 520 (6) ◽  
pp. 2115-2118 ◽  
Author(s):  
Dae-Hyung Cho ◽  
Yong-Duck Chung ◽  
Kyu-Seok Lee ◽  
Nae-Man Park ◽  
Kyung-Hyun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Oxide Layer ◽  
Growth Temperature ◽  
Transparent Conducting Oxide ◽  
Thin Film Solar Cells ◽  
Transparent Conducting
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