Non-stoichiometry-induced metal-to-insulator transition in nickelate thin films grown by pulsed laser deposition

2018 ◽  
Vol 18 (12) ◽  
pp. 1577-1582 ◽  
Author(s):  
Jongmin Lee ◽  
Kyoung Soon Choi ◽  
Tae Kwon Lee ◽  
Il-Seok Jeong ◽  
Sangmo Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal To Insulator Transition

Semiconductor-insulator transition in VO2(B) thin films grown by pulsed laser deposition

2015 ◽  
Vol 118 (12) ◽  
pp. 125308 ◽  
Author(s):  
Armando Rúa ◽  
Ramón D. Díaz ◽  
Sergiy Lysenko ◽  
Félix E. Fernández
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition

Metal–insulator transition temperature of boron-doped VO2 thin films grown by reactive pulsed laser deposition

2020 ◽  
Vol 177 ◽  
pp. 32-37 ◽  
Author(s):  
Thameur Hajlaoui ◽  
Nicolas Émond ◽  
Christian Quirouette ◽  
Boris Le Drogoff ◽  
Joëlle Margot ◽  
...  
Keyword(s):  
Thin Films ◽  
Transition Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Insulator Transition ◽  
Laser Deposition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Boron Doped ◽  
Vo2 Thin Films

Pulsed laser deposition of PbMg1/3Nb2/3O3 thin films and PbMg1/3Nb2/3O3/PbTiO3 multilayers

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-65-Pr11-69
Author(s):  
N. Lemée ◽  
H. Bouyanfif ◽  
J. L. Dellis ◽  
M. El Marssi ◽  
M. G. Karkut ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

SrBi2Nb2O9 ferroelectric thin films deposited by pulsed laser deposition on textured and epitaxied platinum electrodes

2001 ◽  
Vol 11 (PR11) ◽  
pp. Pr11-133-Pr11-137
Author(s):  
J. R. Duclère ◽  
M. Guilloux-Viry ◽  
A. Perrin ◽  
A. Dauscher ◽  
S. Weber ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Platinum Electrodes

Microstructural and Electrical Characterization of Barium Strontium Titanatebased Solid Solution Thin Films Deposited on Ceramic Substrates by Pulsed Laser Deposition

2002 ◽  
Vol 720 ◽  
Author(s):  
Costas G. Fountzoulas ◽  
Daniel M. Potrepka ◽  
Steven C. Tidrow
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Field Variable ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Nominal Thickness

AbstractFerroelectrics are multicomponent materials with a wealth of interesting and useful properties, such as piezoelectricity. The dielectric constant of the BSTO ferroelectrics can be changed by applying an electric field. Variable dielectric constant results in a change in phase velocity in the device allowing it to be tuned in real time for a particular application. The microstructure of the film influences the electronic properties which in turn influences the performance of the film. Ba0.6Sr0.4Ti1-y(A 3+, B5+)yO3 thin films, of nominal thickness of 0.65 μm, were synthesized initially at substrate temperatures of 400°C, and subsequently annealed to 750°C, on LaAlO3 (100) substrates, previously coated with LaSrCoO conductive buffer layer, using the pulsed laser deposition technique. The microstructural and physical characteristics of the postannealed thin films have been studied using x-ray diffraction, scanning electron microscopy, and nano indentation and are reported. Results of capacitance measurements are used to obtain dielectric constant and tunability in the paraelectric (T>Tc) regime.

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